公开(公告)号：US4110781A

公开(公告)日：1978-08-29

申请号：US730183

申请日：1976-10-05

申请人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111 ,  H01L31/167 ,  H02M1/08

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4295 ,  H01L31/1113 ,  H01L31/167

摘要： A bidirectional light-activated thyristor is provided which has a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation. The first and second thyristor portions are electrically isolated from each other by an isolating section. The bidirectional light-activated thyristor is provided with a first and a second photo trigger means for triggering the first and second thyristor portions respectively. Means is further provided for blocking a photo-trigger signal from the first photo-trigger means to the second thyristor portion and from the second photo-trigger means to the first thyristor portion.

摘要翻译： 提供了一种双向光激活晶闸管，其具有以预定的位置关系彼此相反平行布置的第一和第二晶闸管部分。 第一和第二晶闸管部分通过隔离部分彼此电隔离。 双向光激活晶闸管设置有分别触发第一和第二晶闸管部分的第一和第二光触发装置。 进一步提供了用于将光触发信号从第一光触发装置阻挡到第二晶闸管部分并且从第二光触发装置阻挡到第一晶闸管部分的装置。

公开(公告)号：US4216487A

公开(公告)日：1980-08-05

申请号：US879758

申请日：1978-02-21

申请人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

发明人： Nobutake Konishi ,  Takeshi Yokota ,  Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Masahiro Okamura

IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111 ,  H01L31/167 ,  H02M1/08

CPC分类号： H01L31/0203 ,  G02B6/421 ,  G02B6/4295 ,  H01L31/1113 ,  H01L31/167

摘要： Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.

摘要翻译： 公开了一种双向光激活晶闸管，其包括以预定的位置关系彼此相反并联布置的第一和第二晶闸管部分，用于将第一和第二晶闸管部分彼此电隔离的隔离部分，第一和第二晶体管 用于将第一和第二晶闸管部分彼此并联连接的第二主电极和分别触发第一和第二晶闸管部分的第一和第二光触发装置，其中来自第一照片的光触发信号 通过第一晶闸管部分防止触发装置到达第二晶闸管部分，并且通过第二晶闸管部分防止来自第二光触发装置的光触发信号到达第一晶闸管部分。

公开(公告)号：US4100562A

公开(公告)日：1978-07-11

申请号：US678171

申请日：1976-04-19

申请人： Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Nobutake Konishi

发明人： Yoshitaka Sugawara ,  Tsutomu Yatsuo ,  Nobutake Konishi

IPC分类号： H01L31/111 ,  G02B6/42 ,  H01L31/12 ,  H01L31/167

CPC分类号： G02B6/4295 ,  G02B6/4212 ,  G02B6/4248 ,  H01L31/167 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/1301

摘要： A light emitting semiconductor device and a light detecting semiconductor device are coupled optically with each other through a light guide. The light guide is made of a single piece of light transmissible insulating material and at least its end portion associated with the semiconductor light detector is brought into wet contact with a light sensing region of the semiconductor light detector including its neighboring area. While being in fluid state, the light transmissible insulator held in wet contact with the semiconductor light emitter and detector is shaped into a predetermined configuration and thereafter hardened to form the light guide.

摘要翻译： 发光半导体器件和光检测半导体器件通过光导彼此光学耦合。 光导由单片透光绝缘材料制成，并且至少其与半导体光检测器相关联的端部与包括其相邻区域的半导体光检测器的光感测区域湿式接触。 在处于流体状态时，保持与半导体光发射器和检测器湿接触的透光性绝缘体成形为预定构造，然后硬化以形成光导。

公开(公告)号：US08455269B2

公开(公告)日：2013-06-04

申请号：US12376199

申请日：2006-08-04

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/00

CPC分类号： H01L29/045 ,  H01L23/345 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.

摘要翻译： 在双极型半导体器件中，在通态正向偏压工作时，从碳化硅单晶衬底的表面生长的碳化硅外延膜中电子和空穴复合; 在碳化硅双极半导体器件中增加的导通状态正向电压通过收缩通过接通状态正向偏置操作而扩大的堆垛层错的区域来恢复。 在本发明的方法中，通过接通状态的正向偏压操作来增加堆垛层错扩大区域和导通状态正向电压的双极性半导体器件在高于350℃的温度下被加热。

公开(公告)号：US07570502B2

公开(公告)日：2009-08-04

申请号：US10565389

申请日：2004-07-23

申请人： Yoshitaka Sugawara ,  Katsunori Asano ,  Mitsuru Matsukawa ,  Yoshifumi Minowa ,  Toshihiko Shikata

发明人： Yoshitaka Sugawara ,  Katsunori Asano ,  Mitsuru Matsukawa ,  Yoshifumi Minowa ,  Toshihiko Shikata

IPC分类号： H02M7/5387

CPC分类号： H02M7/521 ,  H02M1/32 ,  H02M1/38 ,  H02M2001/0012

摘要： A problem to be solved by the present invention is to eliminate variation in potential in a turn-off time period of each GTO element, and to stabilize a gate drawing current by surely performing the turn-off of the GTO element. In an inverter apparatus having a three-phase inverter configured to include paired GTO elements an inverter control portion has a simultaneous switching prevention function of delaying a turn-on operation of each of the GTO elements which correspond to phases other than a phase corresponding to an optional one of the GTO elements and also correspond to an electrode opposite to an electrode corresponding to the optional one of the GTO elements by a predetermined time in a case where a turn-on command signal for turning on each of the GTO elements is generated within a predetermined time period since the turn-off of the optional one of the GTO elements.

摘要翻译： 本发明要解决的问题是消除每个GTO元件的关断时间段中的电位变化，并且通过可靠地执行GTO元件的关断来稳定栅极引出电流。 在具有配置为包括成对的GTO元件的三相逆变器的逆变器装置中，逆变器控制部具有同时切换防止功能，其延迟对应于除了相应于相同的相位之外的相位的每个GTO元件的接通操作 在GTO元件中可选的一个，并且在用于接通每个GTO元件的接通命令信号的情况下，也对应于与对应于GTO元件中的任选一个GTO元件的电极相对预定时间的电极 自从关闭任选的一个GTO元件以来的预定时间段。

公开(公告)号：US07462886B2

公开(公告)日：2008-12-09

申请号：US11421400

申请日：2006-05-31

申请人： Yoshitaka Sugawara

发明人： Yoshitaka Sugawara

IPC分类号： H01L29/74

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

公开(公告)号：US20070197755A1

公开(公告)日：2007-08-23

申请号：US10594221

申请日：2005-05-10

申请人： Takashi Sueyoshi ,  Ken-ichiro Hiwatari ,  Tadashi Janado ,  Yoshikazu Shoji ,  Yoshitaka Sugawara

发明人： Takashi Sueyoshi ,  Ken-ichiro Hiwatari ,  Tadashi Janado ,  Yoshikazu Shoji ,  Yoshitaka Sugawara

IPC分类号： C08L83/04 ,  C08G77/04

CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/14 ,  C08G77/18 ,  C08G77/20 ,  C08G77/70 ,  C08L83/00

摘要： A curable composition which comprises at least one of the following (A), (B), and (C) and further contains the following (D) (provided that when (C) is not contained, both (A) and (B) are contained). (A): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′ and one or more Si—O—Si bonds. (B): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has an Si—H group and one or more Si—O—Si bonds. (C): A silicon-containing polymer in which the content of components having a weight-average molecular weight of 1,000 or lower is 20 wt. % or lower and which has a reactive group A′, an Si—H group, and one or more Si—O—Si bonds. (D): A catalyst for curing reaction which is a platinum catalyst. The reactive group A′ is any of Si—R1, Si—O—R2, and Si—R3—OCOC(R4)═CH2, provided that R1 and R2 each is alkenyl, R3 is alkylene and/or arylene, and R4 is hydrogen or methyl.

摘要翻译： 包含以下（A），（B）和（C）中的至少一个的可固化组合物，并且还包含以下（D）（前提是不含（C）时，（A）和（B） 被包含）。 （A）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。 ％以下，具有反应性基团A'和一个或多个Si-O-Si键。 （B）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。 ％以下，并且具有Si-H基和一个或多个Si-O-Si键。 （C）：重均分子量为1000以下的成分的含量为20重量％的含硅聚合物。 ％以下，具有反应性基团A'，Si-H基和一个或多个Si-O-Si键。 （D）：铂催化剂用于固化反应的催化剂。 反应性基团A'是Si-R 1，Si-OR 2和Si-R 3 -OCOC（R SUP）中的任何一种 > 4 ） - CH 2，条件是R 1和R 2各自为烯基，R 3， SUP>是亚烷基和/或亚芳基，R 4是氢或甲基。

公开(公告)号：US20070096081A1

公开(公告)日：2007-05-03

申请号：US10562071

申请日：2004-07-20

申请人： Yoshitaka Sugawara

发明人： Yoshitaka Sugawara

IPC分类号： H01L29/08

CPC分类号： C08G77/44 ,  C08L83/10 ,  H01L24/45 ,  H01L25/167 ,  H01L29/1608 ,  H01L29/861 ,  H01L31/0203 ,  H01L33/44 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20758

摘要： In a wide gap semiconductor device of SiC or the like used at a temperature of 150 degrees centigrade or higher, the insulation characteristic of a wide gap semiconductor element is improved and a high-voltage resistance is achieved. For these purposes, a synthetic high-molecular compound, with which the outer surface of the wide gap semiconductor element is coated, is formed in a three-dimensional steric structure which is formed by linking together organosilicon polymers C with covalent bonds resulting from addition reaction. The organosilicon polymers C have been formed by linking at least one organosilicon polymers A having a crosslinked structure using siloxane (Si—O—Si combination) with at least one organosilicon polymers B having a linear linked structure using siloxane through siloxane bonds.

摘要翻译： 在150℃或更高的温度下使用的SiC等的宽间隙半导体器件中，宽间隙半导体元件的绝缘特性得到改善并实现高耐压。 为了这些目的，将宽间隙半导体元件的外表面涂覆的合成高分子化合物形成为通过将有机硅聚合物C与由加成反应产生的共价键连接而形成的三维空间结构 。 已经通过使用硅氧烷通过硅氧烷键将至少一种具有交联结构的有机硅聚合物A与硅氧烷（Si-O-Si组合）与至少一种具有线性连接结构的有机硅聚合物B连接形成有机硅聚合物C.

公开(公告)号：US20060186435A1

公开(公告)日：2006-08-24

申请号：US11407561

申请日：2006-04-19

申请人： Yoshitaka Sugawara

发明人： Yoshitaka Sugawara

IPC分类号： H01L29/74

CPC分类号： H01L29/8613 ,  H01L23/045 ,  H01L23/34 ,  H01L23/345 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/744 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10157 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/20758 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

公开(公告)号：US5608236A

公开(公告)日：1997-03-04

申请号：US404465

申请日：1995-03-15

申请人： Hidetoshi Arakawa ,  Yoshitaka Sugawara ,  Masamitsu Inaba

发明人： Hidetoshi Arakawa ,  Yoshitaka Sugawara ,  Masamitsu Inaba

IPC分类号： H01L29/73 ,  H01L29/735 ,  H01L29/739 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7317 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7436

摘要： A semiconductor device includes an emitter region, a collector region provided directly under the emitter region, and a two-region base structure. The first base region is interposed between the emitter and collector regions, and the second base region supports the collector region. The aforementioned regions have a progressively higher impurity concentrations, with the collector region having an impurity concentration higher than that of the first base region, the second base region having an impurity concentration higher than that of the collector region, and the emitter region having an impurity concentration higher than that of the base region. Also included is a resistance region formed, in one embodiment, from a projecting end portion of one of the base layers. The projecting end portion of the base is fabricated so that both base portions contact one another in the resistance region, and consequently both base portions are of the same potential. Electrodes are also provided for ohmicly contacting the emitter, collector, and base regions. The two-region base structure enables the device to achieve a high resistance, and thus to achieve simultaneously a high breakdown voltage and a high frequency (speed) characteristic.

摘要翻译： 半导体器件包括发射极区域，直接位于发射极区域下方的集电极区域和两区域基极结构。 第一基极区域插在发射极和集电极区域之间，第二基极区域支撑集电极区域。 上述区域具有逐渐变高的杂质浓度，其中集电极区域的杂质浓度高于第一基极区域，第二基极区域的杂质浓度高于集电极区域的杂质浓度，发射极区域具有杂质 浓度高于基区。 还包括在一个实施例中由一个基底层的突出端部形成的电阻区域。 基座的突出端部被制造成使得两个基部在电阻区域中彼此接触，因此两个基部都具有相同的电位。 还提供电极用于欧姆接触发射极，集电极和基极区域。 双区域基础结构使得器件能够实现高电阻，从而同时实现高击穿电压和高频（速度）特性。