Abstract:
The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
Abstract:
When communication is performed simultaneously with two moving bodies such as a satellite, an antenna construction in which a plurality of antennas do not become an obstacle to each other's communication and the direction (the azimuth angle and the elevation angle) adjusting mechanism thereof can be realized with a simple construction. The two antennas have another movable portion (a rotation mechanism with respect to the axis) independently, while sharing the direction adjusting mechanism for the azimuth angle and the elevation angle. The rotation axis of the rotation mechanism of each antenna faces the same direction on the same plane, and each rotation mechanism is separately arranged in an area defined by a plane obtained by extending the axis of the azimuth angle adjusting mechanism toward the axial direction of the elevation angle adjusting mechanism. The azimuth angle and the elevation angle of respective antennas can be separately adjusted by the rotation mechanism with respect to the axis, hence the antennas can be directed to the communication targets existing in the two different directions simultaneously from the reception point.
Abstract:
The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.
Abstract:
The present invention relates to the design and use of an ion source with a rapid beam current controller for experimental and medicinal purposes. More particularly, the present invention relates to the design and use of a laser ion source with a magnetic field applied to confine a plasma flux caused by laser ablation.
Abstract:
When the quick traverse play back command (or, quick returning play back command) of the audio information by the compression audio information is given to the play back apparatus, by the control of the control section, the special audio according to the temporarily stored data stored in the first storage means is repeatedly played back, instead of the play back of the audio by the ordinary play back operation.
Abstract:
The present invention mainly relates to an ion accelerator with significantly simplified construction, for accelerating an much larger amount of ions, wherein that a plasma-generating target 12, a vacuum chamber 16 for extracting ions from plasma generated from the plasma-generating target 12, and an ion linac 30 are connected in series, the vacuum chamber 16 is installed near an ion entrance of the ion linac 30, the ion accelerator also has a high voltage power supply boosting the vacuum chamber 16 to a desired voltage, and ions are directly injected from the vacuum chamber 16 to the ion linac 30. In addition, so as to improve the above-described ion accelerator 20, to greatly simplifying construction, to efficiently extracting all the ions included in accelerable plasma that is generated, and to be able to accelerate an ion beam with large pulse width, an ion accelerator has the construction that a plasma-generating target 112 for generating plasma by radiating a plasma generating laser L, a vacuum chamber 116 that extracts ions from plasma generated in the plasma-generating target 112 and is directly installed in an ion entrance 138 of an ionic linac 130, and an ion linac 130 are serially connected so that ions may be directly injected into the ion linac 130 by using the diffusion velocity of the plasma.
Abstract:
Granules collected from a solution of a polycarbonate, an integrated structure of independent fine particles constituting the granules being formed at least on the surfaces of the granules; and a process for preparing the granules of the polycarbonate which comprises the steps of adding a poor solvent to the polycarbonate solution, and then agitation-granulating fine particles of the polycarbonate into the granules, while stirring involving a shear force-imparting function is carried out under heating. According to the present invention, the polycarbonate or the like can be collected from its organic solvent solution as the granules having good drying properties.
Abstract:
A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.
Abstract:
Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.
Abstract:
A bidirectional light-activated thyristor is provided which has a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation. The first and second thyristor portions are electrically isolated from each other by an isolating section. The bidirectional light-activated thyristor is provided with a first and a second photo trigger means for triggering the first and second thyristor portions respectively. Means is further provided for blocking a photo-trigger signal from the first photo-trigger means to the second thyristor portion and from the second photo-trigger means to the first thyristor portion.