公开(公告)号：US3943550A

公开(公告)日：1976-03-09

申请号：US534373

申请日：1974-12-19

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L31/111 ,  H01L29/74

CPC分类号： H01L31/1113

摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

摘要翻译： 公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上， 暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

公开(公告)号：US4016593A

公开(公告)日：1977-04-05

申请号：US583406

申请日：1975-06-03

申请人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

发明人： Nobutake Konishi ,  Tsutomu Yatsuo ,  Tatsuya Kamei ,  Masahiro Okamura ,  Takuzo Ogawa

IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L31/0203 ,  H01L31/111

CPC分类号： H01L31/0203 ,  H01L31/1113

摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.

摘要翻译： 双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层 一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置 。

公开(公告)号：US3967308A

公开(公告)日：1976-06-29

申请号：US451679

申请日：1974-03-15

申请人： Tsutomu Yatsuo ,  Tatsuya Kamei ,  Takuzo Ogawa ,  Tomoyuki Tanaka

发明人： Tsutomu Yatsuo ,  Tatsuya Kamei ,  Takuzo Ogawa ,  Tomoyuki Tanaka

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/74 ,  H01L29/747

CPC分类号： H01L29/747 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/42308 ,  H01L29/74

摘要： A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes.

摘要翻译： 具有形成在阳极侧的栅电极的晶闸管。 在阳极和栅电极之间的衬底的表面层中形成有大的横向电阻的辅助区域。

公开(公告)号：US3978514A

公开(公告)日：1976-08-31

申请号：US442242

申请日：1974-02-13

申请人： Takuzo Ogawa ,  Tsutomu Yatsuo ,  Keiichi Morita

发明人： Takuzo Ogawa ,  Tsutomu Yatsuo ,  Keiichi Morita

IPC分类号： H01L29/74 ,  H01L29/747

CPC分类号： H01L29/7416

摘要： A diode-integrated high speed thyristor formed into one body by using a separation region for preventing interference between a thyristor and a diode.

公开(公告)号：US4136351A

公开(公告)日：1979-01-23

申请号：US792002

申请日：1977-04-28

申请人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Susumu Murakami ,  Tadahiko Miyoshi ,  Takuzo Ogawa

发明人： Yoshitaka Sugawara ,  Tatsuya Kamei ,  Susumu Murakami ,  Tadahiko Miyoshi ,  Takuzo Ogawa

IPC分类号： H01L23/48 ,  H01L31/12 ,  H01L31/167

CPC分类号： H01L31/167 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/83385 ,  H01L2924/01322 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/15787 ,  H01L2924/19103 ,  H01L2924/351

摘要： A photo-coupled semiconductor device comprising a light-emitting semiconductor element, a light-receiving semiconductor element, and an insulation base supporting these two semiconductor elements. The insulation base has a pair of parallel surfaces and provides an optical path extending between the parallel surfaces for photo-coupling the semiconductor elements. Each of the semiconductor elements has at least two rigid electrodes extending in parallel to the parallel surfaces of the insulation base, and the electrodes are electrically and mechanically connected at one of their parallel surfaces by solder to conductive interconnection layers exposed at predetermined positions of one of the parallel surfaces of the insulation base. The device can satisfy both the desired increase in the efficiency of photo-coupling and the desired improvement in the massproductivity.

公开(公告)号：US3943547A

公开(公告)日：1976-03-09

申请号：US421265

申请日：1973-12-03

申请人： Takahiro Nagano ,  Tatsuya Kamei ,  Takuzo Ogawa

发明人： Takahiro Nagano ,  Tatsuya Kamei ,  Takuzo Ogawa

IPC分类号： H01L23/31 ,  H01L29/00 ,  H01L29/06 ,  H01L29/743

CPC分类号： H01L29/0661 ,  H01L23/3157 ,  H01L29/00 ,  H01L2924/0002

摘要： A semiconductor device comprising a semiconductor substrate including at least three layers of alternating conductivity between a pair of principal surfaces, the side surface of said semiconductor substrate being formed in pulley-shape and the depth of the valley of the pulley-shape being selected from the most appropriate numerical range related with the dielectric constant of the surrounding medium and the thickness of the semiconductor substrate.

摘要翻译： 一种半导体器件，包括半导体衬底，所述半导体衬底在一对主表面之间包括至少三个交替导电层，所述半导体衬底的侧表面形成为滑轮形状，并且所述滑轮形状的谷的深度选自 最适合的数值范围与周围介质的介电常数和半导体衬底的厚度有关。

公开(公告)号：US4058821A

公开(公告)日：1977-11-15

申请号：US668404

申请日：1976-03-19

申请人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Tatsuya Kamei ,  Takuzo Ogawa

发明人： Tadahiko Miyoshi ,  Yasutoshi Kurihara ,  Tatsuya Kamei ,  Takuzo Ogawa

IPC分类号： H01L31/12 ,  H01L31/0232 ,  H01L31/167

CPC分类号： H01L31/0232 ,  H01L31/167

摘要： A photo-coupler semiconductor device includes a semiconductor light emitter and a semiconductor light detector coupled optically with each other through an optical guide. A portion of the optical guide close to the semiconductor light detector is made of glass. The glass portion of the optical guide is brought into intimate contact with a glass layer which is formed on a light sensitive region of the semiconductor light detector. The intimate contact is made by melting the glass portion on the glass layer.

摘要翻译： 光耦合器半导体器件包括半导体光发射器和通过光导相互光耦合的半导体光检测器。 靠近半导体光检测器的光导体的一部分由玻璃制成。 光导体的玻璃部分与形成在半导体光检测器的光敏区域上的玻璃层紧密接触。 通过熔化玻璃层上的玻璃部分来进行紧密接触。

公开(公告)号：US4079405A

公开(公告)日：1978-03-14

申请号：US589675

申请日：1975-06-24

申请人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

发明人： Hirobumi Ohuchi ,  Masahiro Okamura ,  Sumio Kawakami ,  Takuzo Ogawa

IPC分类号： H01L31/00 ,  H01L31/06 ,  H01L29/48

CPC分类号： H01L31/00 ,  H01L31/06 ,  Y02E10/50

摘要： A semiconductor photodetector comprising a first semiconductor layer having N-type conductivity; a second semiconductor layer having N-type conductivity, disposed in the vicinity of the first semiconductor layer and having a resistivity higher than that of the first semiconductor layer; a third region having P-type conductivity, disposed in the vicinity of the second semiconductor layer and having a thickness smaller than that of the second semiconductor layer; a first main electrode kept in ohmic contact with the first semiconductor layer; and a second main electrode kept in ohmic contact with a portion of the third region, the surface of the third region serving as a light receiving surface.

摘要翻译： 一种半导体光电检测器，包括具有N型导电性的第一半导体层; 具有N型导电性的第二半导体层，设置在所述第一半导体层附近并具有比所述第一半导体层的电阻率高的电阻率; 具有P型导电性的第三区域，设置在所述第二半导体层附近，并且具有比所述第二半导体层的厚度小的厚度; 与第一半导体层保持欧姆接触的第一主电极; 以及与第三区域的一部分欧姆接触的第二主电极，第三区域的表面用作光接收表面。

公开(公告)号：US4223328A

公开(公告)日：1980-09-16

申请号：US911311

申请日：1978-06-01

申请人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

发明人： Yoshio Terasawa ,  Kenji Miyata ,  Masayoshi Naito ,  Takuzo Ogawa ,  Masahiro Okamura

IPC分类号： H01L29/80 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/74 ,  H01L29/744

CPC分类号： H01L29/744 ,  H01L29/0834 ,  H01L29/1066 ,  H01L29/167

摘要： A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

摘要翻译： 公开了一种场控晶闸管，其包括暴露于半导体衬底的一个主表面并具有第一导电类型的第一发射极区域，暴露于衬底的另一个主表面并具有第二导电类型的第二发射极区域， 连接第一和第二发射极区域的区域，以及设置在基极区域中的栅极区域。 栅极区域由平行于发射极的板状第一部分和将第一板状部分与半导体衬底的主表面中的一个连接的第二部分组成。 基极区域的杂质浓度比基极区域具有与基极区域相同的导电类型的发射极区域的部分比在具有相反导电类型的发射极区域更靠近的部分的基极区域更高 到基地区。 场控晶闸管具有高正向阻断电压增益（阳极 - 阴极电压/栅极偏置电压），大额定电流和高开关功率能力，其开关时间非常短。

公开(公告)号：US4210464A

公开(公告)日：1980-07-01

申请号：US873774

申请日：1978-01-31

申请人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

发明人： Tomoyuki Tanaka ,  Masahiro Okamura ,  Toshikatsu Shirasawa ,  Takuzo Ogawa

IPC分类号： H01L29/73 ,  H01L21/26 ,  H01L21/263 ,  H01L21/322 ,  H01L21/331 ,  H01L21/56 ,  H01L23/31 ,  H01L29/74 ,  H01L29/861 ,  C03C3/04

CPC分类号： H01L24/01 ,  H01L21/26 ,  H01L21/263 ,  H01L21/56 ,  H01L23/3171 ,  H01L23/3178 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/3025

摘要： The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

摘要翻译： 以绝缘玻璃覆盖的其pn结露出端的半导体器件的整个体，由于电子束的能量减少而被照射到具有高于0.5MeV的能量的辐射，同时半导体器件保持在更高的温度 超过300℃，优选高于350℃。结果，半导体器件中的少数载流子的寿命可以缩短，而不会增加相反方向的泄漏电流。