公开(公告)号：US20180261672A1

公开(公告)日：2018-09-13

申请号：US15753745

申请日：2016-08-05

Applicant: Nokia Technologies Oy

Inventor： Darryl COTTON ,  Yinglin LIU ,  Adam ROBINSON ,  Alexander BESSONOV ,  Richard WHITE

IPC: H01L29/16 ,  G01N27/414 ,  H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L29/778 ,  H01L31/028 ,  H01L31/112 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/1606 ,  G01N27/4146 ,  H01L29/0653 ,  H01L29/127 ,  H01L29/41725 ,  H01L29/4238 ,  H01L29/66045 ,  H01L29/778 ,  H01L31/028 ,  H01L31/112 ,  Y02E10/547

Abstract: A method and apparatus, the method comprising: forming a layer of two dimensional material (23), in particular graphene, on a first release layer; forming, possibly a (gate) insulating layer (35), and at least two, preferably three, electrodes (25); forming a second release layer overlaying at least a portion of the layer of two dimensional material; providing a mouldable polymer (24, 26, 28) overlaying the at least two electrodes and the second release layer; and removing the first and second release layers to provide a cavity (29) between the mouldable polymer (26) and the layer of two dimensional material (23).

公开(公告)号：US20210200893A1

公开(公告)日：2021-07-01

申请号：US16092732

申请日：2017-04-27

Applicant: Nokia Technologies Oy

Inventor： Mark ALLEN ,  Troels RONNOW ,  David BITAULD ,  Alexander BESSONOV

IPC: G06F21/62

Abstract: An apparatus, method and computer program wherein the apparatus comprises: a plurality of quantum dot-graphene field effect transistors; circuitry configured to provide an individual drain-source bias voltage to each of a plurality of quantum dot-graphene field effect transistors, wherein different individual drain-source bias voltages have different parameters, to enable the plurality of quantum dot-graphene field effect transistors to detect light from a user of an apparatus; and circuitry configured to obtain output signals from each of a plurality of quantum dot-graphene field effect transistors where the output signal is dependent upon both the light detected by the quantum dot-graphene field effect transistor and the parameters of the drain-source bias voltage to enable the obtained output signals to be used as a scrambled identification signal of the user of the apparatus.

公开(公告)号：US20180261702A1

公开(公告)日：2018-09-13

申请号：US15761200

申请日：2016-09-12

Applicant: Nokia Technologies Oy

Inventor： Alexander BESSONOV ,  Adam ROBINSON ,  Darryl COTTON ,  Richard WHITE

IPC: H01L31/028 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/112 ,  H01L31/18

CPC classification number: H01L31/028 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/112 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector (400) has a two dimensional conductive channel (302, 408) with source and drain electrodes (404) configured to enable a flow of electrical current through the two dimensional conductive channel (302, 408); and a quantum dot layer (304, 406) overlying the two dimensional conductive channel (302, 408), the quantum dot layer (304, 406) configured to generate charge on exposure to incident electromagnetic radiation (310), the generated charge producing an electric field which causes a change in electrical current passing through the underlying two dimensional conductive channel (302, 408), the change in electrical current being indicative of one or more of the presence and magnitude of the incident electromagnetic radiation (310); wherein the quantum dot layer (304, 406) is configured to have an incident electromagnetic radiation surface (312) which has a texturing comprising undulations in the surface to provide a surface roughness with an average peak amplitude (308) of the order of between 10 nm and 300 nm. The surface texture increases the amount of electromagnetic radiation absorbed in the quantum dot layer (304, 406) in comparison to a photodetector having a flat (non-textured) incident electromagnetic radiation surface.

公开(公告)号：US20180315883A1

公开(公告)日：2018-11-01

申请号：US15770277

申请日：2016-10-07

Applicant: Nokia Technologies Oy

Inventor： Alexander BESSONOV ,  Darryl COTTON ,  Adam ROBINSON

IPC: H01L31/173 ,  H01L31/113 ,  H01L31/024 ,  A61B5/0205 ,  A61B5/1455 ,  A61B5/00

CPC classification number: H01L31/173 ,  A61B5/02433 ,  A61B5/14552 ,  A61B5/6826 ,  A61B2562/0233 ,  A61B2562/0238 ,  A61B2562/12

Abstract: An apparatus (201) comprises a light emitter (202) and a photodetector (203) formed on a single fluid-permeable substrate (206) such that the photodetector (203) is able to detect light emitted by the light emitter (202) after interaction of the light with a user of the apparatus (201). The photodetector comprises a channel member (207) which may be made from graphene, respective source and drain electrodes (208, 209), a layer of photosensitive material (210) configured to vary the flow of electrical current through the channel member (207) on exposure to light from the light emitter (202), and a gate electrode (211). The apparatus (201) further comprises a layer of fluid-impermeable dielectric material (212) configured to inhibit a flow of electrical current between the channel member (207) and the gate electrode (211) of the photodetector (203) to enable the electrical conductance of the channel member (207) to be controlled by a voltage applied to the gate electrode (211) and to inhibit exposure of the light emitter (202) to fluid which has permeated through the fluid-permeable substrate (206). The layer of fluid-impermeable dielectric material (212) allows resilient substrates made from polymeric material to be used without the risk of damage to the overlying components caused by the permeated fluid. The dual functionality of the layer of fluid-impermeable dielectric material (212) reduces the number of fabrication steps used to form the apparatus (201) and results in a thinner, more compact device.