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1.发明授权Systems for protecting internal components of an EUV light source from plasma-generated debris 有权用于保护EUV光源的内部部件免受等离子体产生的碎片的系统公开(公告)号：US07109503B1
公开(公告)日：2006-09-19
申请号：US11067099
申请日：2005-02-25
申请人： Norbert R. Bowering , Bjorn A. M. Hansson , Alexander N. Bykanov , Oleh Khodykin , Alexander I. Ershov , William N. Partlo
发明人： Norbert R. Bowering , Bjorn A. M. Hansson , Alexander N. Bykanov , Oleh Khodykin , Alexander I. Ershov , William N. Partlo
IPC分类号： G01J1/00
CPC分类号： G03F7/70925 , B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , G21K2201/06 , H05G2/001
摘要： Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.
摘要翻译： 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面，公开了一种屏蔽件，其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片，同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面，公开了一种屏蔽件，其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面，公开了一种系统，其将屏蔽件从光源等离子体室移动到清洁室，其中屏蔽件被清洁。
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2.发明授权Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法公开(公告)号：US07732793B2
公开(公告)日：2010-06-08
申请号：US11705954
申请日：2007-02-13
申请人： Alexander I. Ershov , William F. Marx , Norbert Bowering , Bjorn A. M. Hansson , Oleh Khodykin , Igor V. Fomenkov
发明人： Alexander I. Ershov , William F. Marx , Norbert Bowering , Bjorn A. M. Hansson , Oleh Khodykin , Igor V. Fomenkov
IPC分类号： C25F1/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/7085 , G03F7/70916 , G21K1/06 , G21K2201/06 , H05G2/001
摘要： Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
摘要翻译： 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。
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公开(公告)号：US20120193547A1
公开(公告)日：2012-08-02
申请号：US13441639
申请日：2012-04-06
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要翻译： 公开了一种EUV光源，其可以包括多个目标，例如锡滴，以及产生预脉冲和主脉冲的系统，其中具有用于照射目标的预脉冲以产生扩展的目标。 该系统还可以包括连续泵浦的激光器装置，其产生具有用于照射扩展目标的主脉冲以产生EUV光脉冲的脉冲的主脉冲。 该系统还可以具有在EUV光脉冲的突发期间改变至少一个预脉冲参数的控制器。 另外，EUV光源还可以包括测量EUV光脉冲脉冲串内的至少一个EUV光脉冲的强度的仪器，并且向控制器提供反馈信号以在脉冲串的爆发期间改变至少一个预脉冲参数 EUV光脉冲以产生具有预选剂量的EUV脉冲的突发。
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公开(公告)号：US07453077B2
公开(公告)日：2008-11-18
申请号：US11323397
申请日：2005-12-29
IPC分类号： G21K5/04
摘要： An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.
摘要翻译： 公开了一种EUV光源及其操作方法，其可以包括：EUV等离子体生成室，其包括室壁，该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒，其包括终端，所述终端包括面向所述出口的开口; 第一出口套筒室，其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构，其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩，并且可以例如是在终端处包括窄端的圆锥形形状。
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公开(公告)号：US09713239B2
公开(公告)日：2017-07-18
申请号：US12928313
申请日：2010-12-07
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
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公开(公告)号：US20110079736A1
公开(公告)日：2011-04-07
申请号：US12928313
申请日：2010-12-07
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
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公开(公告)号：US20080149862A1
公开(公告)日：2008-06-26
申请号：US11644153
申请日：2006-12-22
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要翻译： 公开了一种EUV光源，其可以包括多个目标，例如锡滴，以及产生预脉冲和主脉冲的系统，其中具有用于照射目标的预脉冲以产生扩展的目标。 该系统还可以包括连续泵浦的激光器装置，其产生具有用于照射扩展目标的主脉冲以产生EUV光脉冲的脉冲的主脉冲。 该系统还可以具有在EUV光脉冲的突发期间改变至少一个预脉冲参数的控制器。 另外，EUV光源还可以包括测量EUV光脉冲脉冲串内的至少一个EUV光脉冲的强度的仪器，并且向控制器提供反馈信号以在脉冲串的爆发期间改变至少一个预脉冲参数 EUV光脉冲以产生具有预选剂量的EUV脉冲的突发。
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8.发明授权Systems for protecting internal components of a EUV light source from plasma-generated debris 失效用于保护EUV光源的内部部件免受等离子体产生的碎片的系统公开(公告)号：US07365351B2
公开(公告)日：2008-04-29
申请号：US11512821
申请日：2006-08-30
CPC分类号： G03F7/70925 , B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , G21K2201/06 , H05G2/001
摘要： Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.
摘要翻译： 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面，公开了一种屏蔽件，其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片，同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面，公开了一种屏蔽件，其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面，公开了一种系统，其将屏蔽件从光源等离子体室移动到清洁室，其中屏蔽件被清洁。
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