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公开(公告)号：US09713239B2
公开(公告)日：2017-07-18
申请号：US12928313
申请日：2010-12-07
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
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公开(公告)号：US20170097572A1
公开(公告)日：2017-04-06
申请号：US15374533
申请日：2016-12-09
CPC分类号： G03F7/7015 , G02B5/0891 , G02B5/09 , G02B19/0019 , G02B19/0095 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70933 , G21K1/062 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
摘要： A reflective EUV optic such as a collector mirror configured as an array of facets that are spaced apart to form respective gaps between adjacent facets. The gaps are used as inlets for gas flow across one of the facets such that flow is introduced parallel to the optic surface. The facets can be made with offsets such that loss of reflective area of the EUV optic can be minimized. The gas facilitates removal of target material from the surface of the facets.
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公开(公告)号：US07671349B2
公开(公告)日：2010-03-02
申请号：US11786145
申请日：2007-04-10
申请人： Alexander N. Bykanov , Norbert Bowering , Igor V. Fomenkov , David C. Brandt , Alexander I. Ershov , Oleh Khodykin , William N. Partlo
发明人： Alexander N. Bykanov , Norbert Bowering , Igor V. Fomenkov , David C. Brandt , Alexander I. Ershov , Oleh Khodykin , William N. Partlo
IPC分类号： H04H1/04
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033 , G03F7/70908 , G03F7/70983 , H05G2/003 , H05G2/008
摘要： A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.
摘要翻译： 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预先选定的值以下。 在一个实施方案中，气体可以包含氢气，并且在一个具体实施方案中，气体可以包含大于50体积％的氢气。
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4.发明申请Systems and methods for target material delivery in a laser produced plasma EUV light source 有权用于激光产生等离子体EUV光源的靶材料输送的系统和方法公开(公告)号：US20090230326A1
公开(公告)日：2009-09-17
申请号：US12214736
申请日：2008-06-19
申请人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
发明人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
IPC分类号： G21K5/00
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译： 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。
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5.发明申请System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus 有权系统管理极紫外（EUV）光刻设备的腔室之间的气流公开(公告)号：US20090154642A1
公开(公告)日：2009-06-18
申请号：US12002073
申请日：2007-12-14
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70808 , G03F7/70841 , G03F7/70908 , G03F7/70916
摘要： A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.
摘要翻译： 气体流量管理系统可以包括至少部分地围绕第一和第二相应空间的第一和第二封闭壁; 在第一空间中产生等离子体的系统，等离子体发射极紫外光; 限制从第一空间流到第二空间的细长体，所述主体至少部分地围绕通道并且具有允许EUV光从第一空间进入通道的第一开口端，以及允许EUV光从第二空间退出的第二开口端 通道进入第二空间，身体形状以建立相对于第一和第二端具有减小的横截面面积的位置; 以及离开孔的气流，所述孔定位成在主体的第一端和具有减小的横截面积的位置之间的位置处将气体引入通道。
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公开(公告)号：US20110079736A1
公开(公告)日：2011-04-07
申请号：US12928313
申请日：2010-12-07
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
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公开(公告)号：US07655925B2
公开(公告)日：2010-02-02
申请号：US11897644
申请日：2007-08-31
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70175 , G03F7/70916 , H05G2/005 , H05G2/008 , Y10S422/906
摘要： Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and/or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.
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公开(公告)号：US20080149862A1
公开(公告)日：2008-06-26
申请号：US11644153
申请日：2006-12-22
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要翻译： 公开了一种EUV光源，其可以包括多个目标，例如锡滴，以及产生预脉冲和主脉冲的系统，其中具有用于照射目标的预脉冲以产生扩展的目标。 该系统还可以包括连续泵浦的激光器装置，其产生具有用于照射扩展目标的主脉冲以产生EUV光脉冲的脉冲的主脉冲。 该系统还可以具有在EUV光脉冲的突发期间改变至少一个预脉冲参数的控制器。 另外，EUV光源还可以包括测量EUV光脉冲脉冲串内的至少一个EUV光脉冲的强度的仪器，并且向控制器提供反馈信号以在脉冲串的爆发期间改变至少一个预脉冲参数 EUV光脉冲以产生具有预选剂量的EUV脉冲的突发。
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公开(公告)号：US20120193547A1
公开(公告)日：2012-08-02
申请号：US13441639
申请日：2012-04-06
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要翻译： 公开了一种EUV光源，其可以包括多个目标，例如锡滴，以及产生预脉冲和主脉冲的系统，其中具有用于照射目标的预脉冲以产生扩展的目标。 该系统还可以包括连续泵浦的激光器装置，其产生具有用于照射扩展目标的主脉冲以产生EUV光脉冲的脉冲的主脉冲。 该系统还可以具有在EUV光脉冲的突发期间改变至少一个预脉冲参数的控制器。 另外，EUV光源还可以包括测量EUV光脉冲脉冲串内的至少一个EUV光脉冲的强度的仪器，并且向控制器提供反馈信号以在脉冲串的爆发期间改变至少一个预脉冲参数 EUV光脉冲以产生具有预选剂量的EUV脉冲的突发。
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10.发明授权Systems and methods for target material delivery in a laser produced plasma EUV light source 有权用于激光产生等离子体EUV光源的靶材料输送的系统和方法公开(公告)号：US07872245B2
公开(公告)日：2011-01-18
申请号：US12214736
申请日：2008-06-19
申请人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
发明人： Georgiy O. Vaschenko , Alexander N. Bykanov , Norbert R. Bowering , David C. Brandt , Alexander I. Ershov , Rodney D. Simmons , Oleh V. Khodykin , Igor V. Fomenkov
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译： 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。
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