公开(公告)号：US08487308B2

公开(公告)日：2013-07-16

申请号：US12753781

申请日：2010-04-02

申请人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

发明人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

IPC分类号： H01L23/04 ,  H01L31/036 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0376

CPC分类号： H01L27/1248 ,  H01L27/1255

摘要： One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有基板，形成在基板上的栅极电极，栅极绝缘膜，形成在栅极绝缘膜上的半导体层，形成在半导体层上的保护膜和栅极绝缘 膜，并且具有分开且直接形成在半导体层上的第一和第二开口部分，形成在保护膜上并与保护膜的第一开口部分处的半导体层电连接的源电极和形成在保护膜上的漏电极 保护膜，并与保护膜的第二开口部电连接到半导体层。

公开(公告)号：US20100258805A1

公开(公告)日：2010-10-14

申请号：US12753781

申请日：2010-04-02

申请人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

发明人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1248 ,  H01L27/1255

摘要： One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有基板，形成在基板上的栅极电极，栅极绝缘膜，形成在栅极绝缘膜上的半导体层，形成在半导体层上的保护膜和栅极绝缘 膜，并且具有分开且直接形成在半导体层上的第一和第二开口部分，形成在保护膜上并与保护膜的第一开口部分处的半导体层电连接的源电极和形成在保护膜上的漏电极 保护膜，并与保护膜的第二开口部电连接到半导体层。

公开(公告)号：US20080237600A1

公开(公告)日：2008-10-02

申请号：US12075873

申请日：2008-03-13

申请人： Chihiro Miyazaki ,  Manabu Ito

发明人： Chihiro Miyazaki ,  Manabu Ito

IPC分类号： H01L29/94

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78609

摘要： One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.

摘要翻译： 本发明的一个实施例是薄膜晶体管，包括：绝缘基板; 栅极电极，栅极绝缘层和包括氧化物的半导体层，这三个元素依次形成在绝缘基板上，并且栅极绝缘层包括：下部栅极绝缘层，下部栅极绝缘层接触 具有绝缘基板并且是包括元素In，Zn或Ga中的任何一种的氧化物; 以及设置在所述下栅绝缘层上的上栅极绝缘层，所述上栅绝缘层包括至少一层; 以及形成在半导体层上的源电极和漏电极。

公开(公告)号：US07907224B2

公开(公告)日：2011-03-15

申请号：US12120120

申请日：2008-05-13

申请人： Manabu Ito ,  Chihiro Miyazaki

发明人： Manabu Ito ,  Chihiro Miyazaki

IPC分类号： G02F1/136 ,  G02F1/1335

CPC分类号： H01L29/7869 ,  G02F2001/136222 ,  H01L27/1225

摘要： One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

摘要翻译： 本发明的一个实施例是一种图像显示装置，其包括基本上透明的基板，形成在基本上透明的基板上的滤色器层和形成在滤色器层上的基本透明的半导体电路。 该电路包括基本上透明的薄膜晶体管，其包括源电极，漏电极，栅极绝缘膜，栅电极和由金属氧化物构成的半导体活性层。 半导体有源层的厚度为10nm-35nm。 电路还包括由基本上透明的导电材料制成的布线，该布线具有与基本上透明的薄膜晶体管的电接触点。

公开(公告)号：US07741643B2

公开(公告)日：2010-06-22

申请号：US12075873

申请日：2008-03-13

申请人： Chihiro Miyazaki ,  Manabu Ito

发明人： Chihiro Miyazaki ,  Manabu Ito

IPC分类号： H01L29/94

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78609

摘要： One embodiment of the present invention is a thin film transistor, including: an insulating substrate; a gate electrode, a gate insulating layer and a semiconductor layer including an oxide, these three elements being formed over the insulating substrate in this order, and the gate insulating layer including: a lower gate insulating layer, the lower gate insulating layer being in contact with the insulating substrate and being an oxide including any one of the elements In, Zn or Ga; and an upper gate insulating layer provided on the lower gate insulating layer, the upper gate insulating layer comprising at least one layer; and a source electrode and a drain electrode formed on the semiconductor layer.

摘要翻译： 本发明的一个实施例是薄膜晶体管，包括：绝缘基板; 栅极电极，栅极绝缘层和包括氧化物的半导体层，这三个元素依次形成在绝缘基板上，并且栅极绝缘层包括：下部栅极绝缘层，下部栅极绝缘层接触 具有绝缘基板并且是包括元素In，Zn或Ga中的任何一种的氧化物; 以及设置在所述下栅绝缘层上的上栅极绝缘层，所述上栅绝缘层包括至少一层; 以及形成在半导体层上的源电极和漏电极。

公开(公告)号：US20080284933A1

公开(公告)日：2008-11-20

申请号：US12120120

申请日：2008-05-13

申请人： Manabu Ito ,  Chihiro Miyazaki

发明人： Manabu Ito ,  Chihiro Miyazaki

IPC分类号： G02F1/1368 ,  H01L29/22

CPC分类号： H01L29/7869 ,  G02F2001/136222 ,  H01L27/1225

摘要： One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

摘要翻译： 本发明的一个实施例是一种图像显示装置，其包括基本上透明的基板，形成在基本上透明的基板上的滤色器层和形成在滤色器层上的基本上透明的半导体电路。 该电路包括基本上透明的薄膜晶体管，其包括源电极，漏电极，栅极绝缘膜，栅电极和由金属氧化物构成的半导体活性层。 半导体有源层的厚度为10nm-35nm。 电路还包括由基本上透明的导电材料制成的布线，该布线具有与基本上透明的薄膜晶体管的电接触点。

公开(公告)号：US20120262642A1

公开(公告)日：2012-10-18

申请号：US13431935

申请日：2012-03-27

申请人： Noriaki IKEDA ,  Chihiro Imamura ,  Manabu Ito

发明人： Noriaki IKEDA ,  Chihiro Imamura ,  Manabu Ito

IPC分类号： G02F1/1368 ,  H01L27/32 ,  H01L33/08 ,  G02F1/167 ,  H01L27/15

CPC分类号： H01L27/3248 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66765

摘要： According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.

摘要翻译： 根据本发明的第一方面，漏极电极和像素电极在形成于半导体有源层上的保护膜上彼此电连接，从而可以容易地将漏电极和像素电极连接到 并提高产量。

公开(公告)号：US08848124B2

公开(公告)日：2014-09-30

申请号：US13431935

申请日：2012-03-27

申请人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

发明人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

IPC分类号： G02F1/136 ,  H01L29/66 ,  H01L29/417 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

CPC分类号： H01L27/3248 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66765

摘要： According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.

摘要翻译： 根据本发明的第一方面，漏极电极和像素电极在形成于半导体有源层上的保护膜上彼此电连接，从而可以容易地将漏电极和像素电极连接到 并提高产量。

公开(公告)号：US20120306582A1

公开(公告)日：2012-12-06

申请号：US13488223

申请日：2012-06-04

申请人： Manabu Ito ,  Hiroyuki Mitome

发明人： Manabu Ito ,  Hiroyuki Mitome

IPC分类号： H03B1/00

CPC分类号： H03L1/04

摘要： A crystal unit and a thermistor with negative resistance-temperature characteristics are housed in a thermostatic oven heated by a heater. A transistor driving the heater is controlled by an output of a differential amplifier, the thermistor is placed between a power supply voltage and an inverting input of the amplifier, and a first resistor used to adjust the temperature of a zero temperature coefficient point of the crystal unit is installed between the inverting input and a ground point. A second resistor is installed between the power supply voltage and a non-inverting input of the amplifier and a third resistor is installed between the non-inverting input and ground point. One of the second and third resistors is a resistor assembly made up of a plurality of resistance elements and one of these resistance elements is provided with positive resistance-temperature characteristics and adapted to detect ambient temperature.

摘要翻译： 具有负电阻温度特性的晶体单元和热敏电阻容纳在由加热器加热的恒温炉中。 驱动加热器的晶体管由差分放大器的输出控制，热敏电阻位于放大器的电源电压和反相输入之间，第一电阻器用于调节晶体的零温度系数点的温度 单元安装在反相输入和接地点之间。 在电源电压和放大器的非反相输入端之间安装第二个电阻，第三个电阻安装在非反相输入和接地点之间。 第二和第三电阻器中的一个是由多个电阻元件组成的电阻器组件，并且这些电阻元件中的一个具有正电阻温度特性并且适于检测环境温度。

公开(公告)号：US08026460B2

公开(公告)日：2011-09-27

申请号：US12219304

申请日：2008-07-18

申请人： Manabu Ito ,  Takeshi Uchida

发明人： Manabu Ito ,  Takeshi Uchida

IPC分类号： H05B1/00 ,  H03B1/00

CPC分类号： H03L1/028

摘要： Provided is a control circuit for a thermostatic oven in an oven controlled crystal oscillator, which is capable of further improving stability of an oscillation frequency. A control circuit in which a thermistor whose resistance value changes according to a temperature outputs a signal according to the ambient temperature of the thermostatic oven inside the oscillator, an operational amplifier outputs a signal according to a difference between the output of the thermistor and a reference signal, a power transistor amplifies the output of the operational amplifier, and a heater generates heat based on a collector voltage of the power transistor, is provided with a temperature sensor circuit having a transistor with a base to which the output of the operational amplifier is input. The control circuit outputs a collector voltage of the transistor as an internal temperature signal which changes according to a temperature inside the oscillator.

摘要翻译： 本发明提供一种能够进一步提高振荡频率稳定性的炉控晶体振荡器中的恒温炉的控制电路。 其中电阻值根据温度变化的热敏电阻根据振荡器内的恒温箱的环境温度输出信号的控制电路，运算放大器根据热敏电阻的输出和参考电压之间的差输出信号 功率晶体管放大运算放大器的输出，并且加热器基于功率晶体管的集电极电压产生热量，设置有具有晶体管的温度传感器电路，该晶体管具有基极，运算放大器的输出为 输入。 控制电路输出晶体管的集电极电压作为根据振荡器内的温度而变化的内部温度信号。