公开(公告)号：US07372282B2

公开(公告)日：2008-05-13

申请号：US11276753

申请日：2006-03-13

申请人： Nozomu Hachisuka ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

发明人： Nozomu Hachisuka ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

IPC分类号： G01R27/08 ,  H01L21/66

CPC分类号： G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  G11C29/50 ,  G11C29/50008 ,  G11C29/56 ,  H01F10/3254 ,  H01F41/302

摘要： A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

摘要翻译： 一种用于测试TMR元件的方法包括分别通过向TMR元件施加具有不同电压值的多个电压来测量TMR元件的多个电阻的步骤，计算电阻变化率 测量的TMR元件的多个电阻，以及使用所计算的电阻变化比来评估TMR元件的步骤。

公开(公告)号：US20060216837A1

公开(公告)日：2006-09-28

申请号：US11276753

申请日：2006-03-13

申请人： Nozomu HACHISUKA ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

发明人： Nozomu HACHISUKA ,  Hiroshi Kiyono ,  Takeo Kagami ,  Kenji Inage ,  Norio Takahashi

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  G11C29/50 ,  G11C29/50008 ,  G11C29/56 ,  H01F10/3254 ,  H01F41/302

摘要： A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by applying a plurality of voltages with different voltage values each other to the TMR element, respectively, a step of calculating a ratio of change in resistance from the measured plurality of resistances of the TMR element, and a step of evaluating the TMR element using the calculated ratio of change in resistance.

摘要翻译： 一种用于测试TMR元件的方法包括分别通过向TMR元件施加具有不同电压值的多个电压来测量TMR元件的多个电阻的步骤，计算电阻变化率 测量的TMR元件的多个电阻，以及使用所计算的电阻变化比来评估TMR元件的步骤。

公开(公告)号：US07436633B2

公开(公告)日：2008-10-14

申请号：US11205072

申请日：2005-08-17

申请人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

发明人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

IPC分类号： G11B5/245

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B2005/3996

摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.

摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

公开(公告)号：US20060082929A1

公开(公告)日：2006-04-20

申请号：US11205072

申请日：2005-08-17

申请人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

发明人： Hiroshi Kiyono ,  Tetsuya Kuwashima ,  Takeo Kagami ,  Noriaki Kasahara ,  Naoki Ohta ,  Nozomu Hachisuka

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/31 ,  G11B5/3912 ,  G11B5/3967 ,  G11B5/4826 ,  G11B2005/3996

摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.

摘要翻译： 在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。 优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。 因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

公开(公告)号：US07675716B2

公开(公告)日：2010-03-09

申请号：US11393775

申请日：2006-03-31

申请人： Takeo Kagami ,  Hiroshi Kiyono ,  Hiraku Hirabayashi ,  Eiichi Omata ,  Seiji Yari ,  Takamitsu Sakamoto

发明人： Takeo Kagami ,  Hiroshi Kiyono ,  Hiraku Hirabayashi ,  Eiichi Omata ,  Seiji Yari ,  Takamitsu Sakamoto

IPC分类号： G11B5/39 ,  G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/3133 ,  G11B5/3146 ,  G11B5/3967 ,  G11B5/6064 ,  G11B2005/0005

摘要： A composite thin-film magnetic head includes a substrate, an under layer formed on the substrate, an MR read head element formed on the under layer and provided with a lower shield layer, an upper shield layer and an MR layer in which a sense current flows in a direction perpendicular to a surface of the MR layer through the upper shield layer and the lower shield layer, an inter-shield insulation layer laminated on the MR read head element, an inductive write head element formed on the inter-shield insulation layer and provided with a first magnetic pole layer, a nonmagnetic layer, a second magnetic pole layer whose end portion is opposed to an end portion of the first magnetic pole layer through the nonmagnetic layer, and a write coil, and an additional shield layer formed between the upper shield layer and the first magnetic pole layer.

摘要翻译： 复合薄膜磁头包括基板，形成在基板上的下层，形成在下层上并设置有下屏蔽层，上屏蔽层和MR层的MR读头元件，其中感测电流 通过上屏蔽层和下屏蔽层在垂直于MR层的表面的方向上流动，层叠在MR读头元件上的屏蔽间绝缘层，形成在屏蔽间绝缘层上的感应写头元件 并且具有第一磁极层，非磁性层，其端部通过非磁性层与第一磁极层的端部相对的第二磁极层和写入线圈，以及形成在第一磁极层之间的附加屏蔽层 上屏蔽层和第一磁极层。

公开(公告)号：US20060256481A1

公开(公告)日：2006-11-16

申请号：US11393775

申请日：2006-03-31

申请人： Takeo Kagami ,  Hiroshi Kiyono ,  Hiraku Hirabayashi ,  Eiichi Omata ,  Seiji Yari ,  Takamitsu Sakamoto

发明人： Takeo Kagami ,  Hiroshi Kiyono ,  Hiraku Hirabayashi ,  Eiichi Omata ,  Seiji Yari ,  Takamitsu Sakamoto

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/3133 ,  G11B5/3146 ,  G11B5/3967 ,  G11B5/6064 ,  G11B2005/0005

摘要： A composite thin-film magnetic head includes a substrate, an under layer formed on the substrate, an MR read head element formed on the under layer and provided with a lower shield layer, an upper shield layer and an MR layer in which a sense current flows in a direction perpendicular to a surface of the MR layer through the upper shield layer and the lower shield layer, an inter-shield insulation layer laminated on the MR read head element, an inductive write head element formed on the inter-shield insulation layer and provided with a first magnetic pole layer, a nonmagnetic layer, a second magnetic pole layer whose end portion is opposed to an end portion of the first magnetic pole layer through the nonmagnetic layer, and a write coil, and an additional shield layer formed between the upper shield layer and the first magnetic pole layer.

摘要翻译： 复合薄膜磁头包括基板，形成在基板上的下层，形成在下层上并设置有下屏蔽层，上屏蔽层和MR层的MR读头元件，其中感测电流 通过上屏蔽层和下屏蔽层在垂直于MR层的表面的方向上流动，层叠在MR读头元件上的屏蔽间绝缘层，形成在屏蔽间绝缘层上的感应写头元件 并且具有第一磁极层，非磁性层，其端部通过非磁性层与第一磁极层的端部相对的第二磁极层和写入线圈，以及形成在第一磁极层之间的附加屏蔽层 上屏蔽层和第一磁极层。

公开(公告)号：US07784171B2

公开(公告)日：2010-08-31

申请号：US11797603

申请日：2007-05-04

申请人： Takeo Kagami ,  Tetsuya Kuwashima ,  Norio Takahashi

发明人： Takeo Kagami ,  Tetsuya Kuwashima ,  Norio Takahashi

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.

摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

公开(公告)号：US07241514B2

公开(公告)日：2007-07-10

申请号：US10880574

申请日：2004-07-01

申请人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

发明人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

IPC分类号： G11B5/39 ,  G11B5/27

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1164 ,  Y10T428/256

摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.

摘要翻译： 提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。 在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。 另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。 盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。 更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。 最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。

公开(公告)号：US20090038143A1

公开(公告)日：2009-02-12

申请号：US12232785

申请日：2008-09-24

申请人： Takeo Kagami ,  Tetsuya Kuwashima ,  Norio Takahashi

发明人： Takeo Kagami ,  Tetsuya Kuwashima ,  Norio Takahashi

IPC分类号： G11B5/127

CPC分类号： G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.

摘要翻译： 提供了一种用于制造磁阻装置的方法。 该磁阻装置用于减少由退火引起的器件特性的劣化。 磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。 最靠近基底的绝缘层的层由金属或半导体氧化物制成。 该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

公开(公告)号：US20050008849A1

公开(公告)日：2005-01-13

申请号：US10880574

申请日：2004-07-01

申请人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

发明人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

IPC分类号： G11B5/39 ,  H01L43/08 ,  G11B5/17 ,  B32B5/16

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1164 ,  Y10T428/256

摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.

摘要翻译： 提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。 在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。 另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。 盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。 更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。 最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。