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公开(公告)号：US10484798B2
公开(公告)日：2019-11-19
申请号：US15904209
申请日：2018-02-23
Applicant: Omron Corporation , STMicroelectronics S.r.l.
Inventor： Takashi Kasai , Shobu Sato , Yuki Uchida , Sebastiano Conti , Igino Padovani , Filippo David
Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane, provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane, provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.
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公开(公告)号：US20180167740A1
公开(公告)日：2018-06-14
申请号：US15808712
申请日：2017-11-09
Applicant: OMRON Corporation
Inventor： Yuki Uchida
Abstract: An acoustic sensor has a semiconductor substrate having an opening, a back plate that is disposed facing the opening of the semiconductor substrate, that is configured to function as a fixed electrode, and that has sound holes that allow passage of air, a vibration electrode film disposed facing the back plate through a void, and a casing configured to house the substrate, the back plate, and the vibration electrode film, and having a pressure hole that allows inflow of air. The acoustic sensor converts transformation of the vibration electrode film into a change in capacitance between the vibration electrode film and the back plate to detect sound pressure.
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公开(公告)号：US09544697B2
公开(公告)日：2017-01-10
申请号：US14482592
申请日：2014-09-10
Applicant: OMRON Corporation
Inventor： Yuki Uchida
CPC classification number: H04R19/04 , H01L2224/48091 , H01L2224/48137 , H01L2924/15151 , H01L2924/16152 , H04R19/005 , H01L2924/00014
Abstract: An acoustic transducer has a substrate having a cavity, a vibrating electrode plate disposed above the substrate and having a void portion that allows pressure to escape, a fixed electrode plate disposed above the substrate opposite the vibrating electrode plate, and a leak pressure regulation portion that hinders leakage of air pressure by passing through the void portion when the vibrating electrode plate is not undergoing deformation, and that becomes separated from the void portion and allows pressure to escape by passing through the void portion when the vibrating electrode plate undergoes deformation from being subjected to pressure.
Abstract translation: 声换能器具有空腔基板，振动电极板设置在基板上方并具有允许压力逸出的空隙部分，设置在与振动电极板相对的基板之上的固定电极板和泄漏压力调节部分， 当振动电极板不发生变形时，阻止通过空隙部分的空气压力的泄漏，并且当空隙部分分离时，当振动电极板经受变形时，通过空隙部分压力逸出 压力。
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公开(公告)号：US20150078592A1
公开(公告)日：2015-03-19
申请号：US14482592
申请日：2014-09-10
Applicant: OMRON Corporation
Inventor： Yuki Uchida
IPC: H04R19/04
CPC classification number: H04R19/04 , H01L2224/48091 , H01L2224/48137 , H01L2924/15151 , H01L2924/16152 , H04R19/005 , H01L2924/00014
Abstract: An acoustic transducer has a substrate having a cavity, a vibrating electrode plate disposed above the substrate and having a void portion that allows pressure to escape, a fixed electrode plate disposed above the substrate opposite the vibrating electrode plate, and a leak pressure regulation portion that hinders leakage of air pressure by passing through the void portion when the vibrating electrode plate is not undergoing deformation, and that becomes separated from the void portion and allows pressure to escape by passing through the void portion when the vibrating electrode plate undergoes deformation from being subjected to pressure.
Abstract translation: 声换能器具有空腔基板，振动电极板设置在基板上方并具有允许压力逸出的空隙部分，设置在与振动电极板相对的基板之上的固定电极板和泄漏压力调节部分， 当振动电极板不发生变形时，阻止通过空隙部分的空气压力的泄漏，并且当空隙部分分离时，当振动电极板经受变形时，通过空隙部分压力逸出 压力。
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公开(公告)号：US10555087B2
公开(公告)日：2020-02-04
申请号：US15808712
申请日：2017-11-09
Applicant: OMRON Corporation
Inventor： Yuki Uchida
Abstract: An acoustic sensor has a semiconductor substrate having an opening, a back plate that is disposed facing the opening of the semiconductor substrate, that is configured to function as a fixed electrode, and that has sound holes that allow passage of air, a vibration electrode film disposed facing the back plate through a void, and a casing configured to house the substrate, the back plate, and the vibration electrode film, and having a pressure hole that allows inflow of air. The acoustic sensor converts transformation of the vibration electrode film into a change in capacitance between the vibration electrode film and the back plate to detect sound pressure.
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Patent Agency Ranking
公开(公告)号：US10405107B2
公开(公告)日：2019-09-03
申请号：US15814256
申请日：2017-11-15
Applicant: STMICROELECTRONICS S.R.L. , OMRON CORPORATION
Inventor： Takashi Kasai , Shobu Sato , Yuki Uchida , Igino Padovani , Filippo David , Sebastiano Conti
Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.
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公开(公告)号：US10257617B2
公开(公告)日：2019-04-09
申请号：US15814256
申请日：2017-11-15
Applicant: STMICROELECTRONICS S.R.L. , OMRON CORPORATION
Inventor： Takashi Kasai , Shobu Sato , Yuki Uchida , Igino Padovani , Filippo David , Sebastiano Conti
Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.
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公开(公告)号：US09723423B2
公开(公告)日：2017-08-01
申请号：US14630917
申请日：2015-02-25
Applicant: OMRON Corporation
Inventor： Yuki Uchida
CPC classification number: H04R31/00 , H04R19/005
Abstract: An acoustic transducer has a back plate having a fixed electrode, a diaphragm that is opposed to the back plate with a gap interposed therebetween and that serves as a movable electrode, and a stopper protruding from a face of the back plate or the diaphragm, which is on a side of the gap. The stopper includes a conductive section electrically isolated from the fixed electrode and the movable electrode. The conductive section comes in contact with a front face of the fixed electrode or the movable electrode opposed to the stopper through deformation of the diaphragm.
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公开(公告)号：US09674618B2
公开(公告)日：2017-06-06
申请号：US14972354
申请日：2015-12-17
Applicant: OMRON CORPORATION
Inventor： Yuki Uchida , Koji Momotani , Takashi Kasai
CPC classification number: H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003 , H04S7/00 , H04S2420/01
Abstract: An acoustic sensor is provided for improving shock resistance performance, along with a method for manufacturing the acoustic sensor. In the acoustic sensor, a fixing plate is provided by a semiconductor manufacturing process, a frame wall has a curved shape in at least a portion of the periphery of the fixing plate, the frame wall being coupled to the semiconductor substrate. A sacrifice layer removed from the inner side of the fixing plate in the manufacturing process remains at least on a portion of the inner side of the frame wall. Roughness of the remaining sacrifice layer is smaller than roughness of a sound shape reflecting structure in which a shape similar to the external shape of sound holes is repeated. Roughness of the sound shape reflecting structure is formed when removing the sacrifice layer using etching liquid supplied from the plurality of sound holes in the semiconductor manufacturing process.
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公开(公告)号：US09668063B2
公开(公告)日：2017-05-30
申请号：US14772108
申请日：2013-09-09
Applicant: OMRON Corporation
Inventor： Yuki Uchida
IPC: H04R19/04 , H04R1/24 , H04R3/06 , H04R19/00 , H04R3/00 , H04R1/04 , B81B3/00 , G10K11/00 , H04R7/06
CPC classification number: H04R19/04 , B81B3/00 , G10K11/002 , H04R1/04 , H04R1/245 , H04R3/002 , H04R3/005 , H04R3/06 , H04R7/06 , H04R19/005 , H04R2201/003 , H04R2410/03 , H04R2499/11
Abstract: A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate.
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