公开(公告)号：US11133435B2

公开(公告)日：2021-09-28

申请号：US16463765

申请日：2017-11-20

Applicant: OSAKA UNIVERSITY

Inventor： Yasufumi Fujiwara ,  Wanxin Zhu ,  Atsushi Koizumi ,  Brandon Mitchell ,  Tom Gregorkiewicz

IPC: H01L33/12 ,  C30B29/40 ,  C30B25/02 ,  C23C16/34 ,  H01L29/15 ,  H01L29/20 ,  H01L33/04 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32 ,  H01L21/205 ,  C30B29/38 ,  H01S5/323

Abstract: Provided is a technique for manufacturing a nitride semiconductor substrate with which it is possible to manufacture a nitride semiconductor substrate having sufficiently reduced dislocation density with a large area even if manufactured on an inexpensive substrate made of sapphire, etc. A nitride semiconductor substrate in which a nitride semiconductor layer formed on a substrate is formed by laminating an undoped nitride layer and a rare earth element-added nitride layer to which a rare earth element is added as a doping material, and the dislocation density is of the order of 106 cm−2 or less. A method for manufacturing a nitride semiconductor substrate in which a step for growing GaN, InN, AlN, or a mixed crystal of two or more thereof on a substrate to form an undoped nitride layer, and a step for forming a rare earth element-added nitride layer to which a rare earth element is added so as to be substituted for Ga, In, or Al are performed via a series of formation steps using an organic metal vapor epitaxial technique at a temperature of 900 to 1200° C. without extraction from a reaction vessel.

公开(公告)号：US20210091268A1

公开(公告)日：2021-03-25

申请号：US16848175

申请日：2020-04-14

Applicant: Lehigh University ,  Osaka University

Inventor： Volkmar Dierolf ,  Brandon Mitchell ,  Ruoqiao Wei ,  Yasufumi Fujiwara ,  Tomasz Gregorkiewicz ,  Shuhei Ichikawa ,  Jun Tatebayashi ,  Dolf Timmerman

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/50 ,  H01L25/075 ,  H01L33/08

Abstract: A color tunable light emission diode in which the color tone of the emission color changes by controlling the injection current, which has an active layer sandwiched between a p-type layer and an n-type layer on a substrate, and the active color layer is formed by doping Eu and Mg to an AlGaInN-based material which is GaN, InN, AlN or a mixed crystal of any two or more of them; and a micro LED display, wherein its display unit is formed by integrating image pixels having the above color tunable light emission diode are provided; and a light emitting semiconductor device technology capable of providing an ultra-small and high definition micro LED display can be provided.