公开(公告)号：US20150214434A1

公开(公告)日：2015-07-30

申请号：US14422185

申请日：2013-08-01

Applicant: OSAKA UNIVERSITY

Inventor： Yasufumi Fujiwara ,  Atsushi Koizumi ,  Yoshikazu Terai

IPC: H01L33/32 ,  H01L33/24 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/24

Abstract: A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material, a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, and an active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method.

Abstract translation: 一种氮化物半导体器件用基板的制造方法，其特征在于，具有使用金属氮化物作为基材并在上述基材上形成具有规定形状的掩模的掩模形成工序的三维结构生长工序， 使用选择生长技术在其上形成有掩模的基材上与基材相同的材料制成三维结构，使得在侧面上形成具有较高折射率的层，以及活性层生长步骤 使用有机金属气相外延法在上述三维结构的侧面上生长含有稀土元素的活性层。

公开(公告)号：US11133435B2

公开(公告)日：2021-09-28

申请号：US16463765

申请日：2017-11-20

Applicant: OSAKA UNIVERSITY

Inventor： Yasufumi Fujiwara ,  Wanxin Zhu ,  Atsushi Koizumi ,  Brandon Mitchell ,  Tom Gregorkiewicz

IPC: H01L33/12 ,  C30B29/40 ,  C30B25/02 ,  C23C16/34 ,  H01L29/15 ,  H01L29/20 ,  H01L33/04 ,  H01L33/00 ,  H01L21/02 ,  H01L33/32 ,  H01L21/205 ,  C30B29/38 ,  H01S5/323

Abstract: Provided is a technique for manufacturing a nitride semiconductor substrate with which it is possible to manufacture a nitride semiconductor substrate having sufficiently reduced dislocation density with a large area even if manufactured on an inexpensive substrate made of sapphire, etc. A nitride semiconductor substrate in which a nitride semiconductor layer formed on a substrate is formed by laminating an undoped nitride layer and a rare earth element-added nitride layer to which a rare earth element is added as a doping material, and the dislocation density is of the order of 106 cm−2 or less. A method for manufacturing a nitride semiconductor substrate in which a step for growing GaN, InN, AlN, or a mixed crystal of two or more thereof on a substrate to form an undoped nitride layer, and a step for forming a rare earth element-added nitride layer to which a rare earth element is added so as to be substituted for Ga, In, or Al are performed via a series of formation steps using an organic metal vapor epitaxial technique at a temperature of 900 to 1200° C. without extraction from a reaction vessel.

公开(公告)号：US09455376B2

公开(公告)日：2016-09-27

申请号：US14422185

申请日：2013-08-01

Applicant: OSAKA UNIVERSITY

Inventor： Yasufumi Fujiwara ,  Atsushi Koizumi ,  Yoshikazu Terai

IPC: H01L31/0256 ,  H01L33/32 ,  H01L33/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/24

CPC classification number: H01L33/325 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/24

Abstract: A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material, a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, and an active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method.