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公开(公告)号：US20200227604A1
公开(公告)日：2020-07-16
申请号：US16640062
申请日：2018-07-19
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Andreas Ploessl , Marcus Zenger
Abstract: A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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公开(公告)号：US11183621B2
公开(公告)日：2021-11-23
申请号：US16640062
申请日：2018-07-19
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Andreas Ploessl , Marcus Zenger
Abstract: A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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公开(公告)号：US11450794B2
公开(公告)日：2022-09-20
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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公开(公告)号：US20200235271A1
公开(公告)日：2020-07-23
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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