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公开(公告)号：US11450794B2
公开(公告)日：2022-09-20
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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公开(公告)号：US20200235271A1
公开(公告)日：2020-07-23
申请号：US16639722
申请日：2018-07-23
Applicant: OSRAM OLED GmbH
Inventor： Paola Altieri-Weimar , Ingo Neudecker , Michael Zitzlsperger , Stefan Groetsch , Holger Klassen
Abstract: A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.
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Patent Agency Ranking
公开(公告)号：US11774555B2
公开(公告)日：2023-10-03
申请号：US16951956
申请日：2020-11-18
Applicant: OSRAM OLED GmbH
Inventor： Hubert Halbritter , Stefan Groetsch
CPC classification number: G01S7/4814 , G01S7/10 , G01S7/484
Abstract: Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable LED lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 μm and/or a surface area of less than or equal to 104 μm2, wherein the LED lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.
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公开(公告)号：US11614215B2
公开(公告)日：2023-03-28
申请号：US17266282
申请日：2019-08-02
Applicant: OSRAM OLED GMBH
Inventor： Robert Regensburger , Stefan Groetsch , Ulrich Frei , Peter Brick
IPC: F21S41/663 , F21S41/25 , F21S41/143 , F21S41/153 , H01L25/075 , F21Y105/10 , F21Y115/10 , B60Q1/14
Abstract: A lighting device includes a pixel array of light-emitting pixels arranged next to one another. The pixel array includes light-emitting pixels with different pixel shapes.
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公开(公告)号：US11133446B2
公开(公告)日：2021-09-28
申请号：US16626355
申请日：2018-06-26
Applicant: OSRAM OLED GmbH
Inventor： Peter Brick , Stefan Groetsch , Simon Schwalenberg , Michael Wittmann
Abstract: An optoelectronic component may include an optoelectronic semiconductor chip having an upper side and a lower side. An emitting region may be formed on the upper side. The emitting region may be configured to emit electromagnetic radiation. A subsurface, forming the emitting region, of the upper side may be smaller than a total surface of the upper side. A collimating optical element may be arranged over the emitting region.
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公开(公告)号：US10672749B2
公开(公告)日：2020-06-02
申请号：US15574926
申请日：2016-05-17
Applicant: OSRAM OLED GmbH
Inventor： Matthias Goldbach , Juergen Holz , Stefan Illek , Stefan Groetsch
IPC: H01L25/16 , H01L25/075 , H01L23/00 , H01L33/62
Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.
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公开(公告)号：US10775012B2
公开(公告)日：2020-09-15
申请号：US16080868
申请日：2017-03-02
Applicant: OSRAM OLED GmbH
Inventor： Stefan Groetsch , Julia Rothneichner
IPC: F21S41/16 , F21S41/14 , F21S41/64 , F21K9/64 , F21Y115/30
Abstract: A pixel light source includes having a light source array, an optical system and an imager matrix arrangement, wherein the optical system maps light radiated by the light source array onto the imager matrix arrangement, the light source array includes a plurality of light emitting diode elements and a plurality of LARP elements, and the optical system is configured to map the light radiated by at least one of the LARP elements into a gap in the angular aperture situated between the light radiated by the light emitting diode elements.
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