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1.发明申请公开(公告)号：US20200294962A1
公开(公告)日：2020-09-17
申请号：US16768208
申请日：2019-02-05
申请人： OSRAM OLED GmbH
发明人： Simeon Katz , Mathias Wendt , Sophia Huppmann , Marcus Zenger , Jens Mueller
摘要： A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.
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公开(公告)号：US10686099B2
公开(公告)日：2020-06-16
申请号：US16081402
申请日：2017-02-10
申请人： OSRAM OLED GmbH
发明人： Sophia Huppmann , Simeon Katz , Marcus Zenger
IPC分类号： H01L33/00 , H01L33/38 , H01L33/42 , H01L33/62 , H01L23/00 , H01L27/15 , H01L25/075 , H01L33/32
摘要： An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.
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公开(公告)号：US11183621B2
公开(公告)日：2021-11-23
申请号：US16640062
申请日：2018-07-19
申请人： OSRAM OLED GmbH
摘要： A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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4.发明授权公开(公告)号：US11961820B2
公开(公告)日：2024-04-16
申请号：US16768208
申请日：2019-02-05
申请人： OSRAM OLED GmbH
发明人： Simeon Katz , Mathias Wendt , Sophia Huppmann , Marcus Zenger , Jens Mueller
CPC分类号： H01L24/89 , H01L24/05 , H01L24/08 , H01L33/62 , H01L2224/05166 , H01L2224/05169 , H01L2224/05582 , H01L2224/05611 , H01L2224/05644 , H01L2224/08111 , H01L2224/08146 , H01L2224/08502 , H01L2224/80805 , H01L2224/80895 , H01L2224/80896 , H01L2924/12041 , H01L2933/0066
摘要： A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.
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公开(公告)号：US20200227604A1
公开(公告)日：2020-07-16
申请号：US16640062
申请日：2018-07-19
申请人： OSRAM OLED GmbH
摘要： A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.
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