-
1.
公开(公告)号:US20210184092A1
公开(公告)日:2021-06-17
申请号:US17183634
申请日:2021-02-24
Applicant: OSRAM OLED GmbH
Inventor: Luca Haiberger , David Racz , Matthias Sperl
IPC: H01L33/62 , H01L31/024 , H01L33/64 , H01L31/0224 , H01L31/02
Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.
-
公开(公告)号:US11588088B2
公开(公告)日:2023-02-21
申请号:US17183634
申请日:2021-02-24
Applicant: OSRAM OLED GmbH
Inventor: Luca Haiberger , David Racz , Matthias Sperl
IPC: H01L33/00 , H01L33/62 , H01L31/024 , H01L33/64 , H01L31/0224 , H01L31/02 , H01L33/38 , H01L33/54 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/30
Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.
-
公开(公告)号:US11417639B2
公开(公告)日:2022-08-16
申请号:US16650316
申请日:2018-10-09
Applicant: OSRAM OLED GmbH
Inventor: Luca Haiberger , Matthias Sperl
IPC: H01L25/16 , H01L31/153 , H01L33/64
Abstract: An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.
-
公开(公告)号:US10749055B2
公开(公告)日:2020-08-18
申请号:US16339582
申请日:2017-10-05
Applicant: OSRAM OLED GmbH
Inventor: Dirk Becker , Matthias Sperl
IPC: H01L31/18 , H01L25/16 , H01L31/0232 , H01L31/0203 , H01L31/02 , H01L31/167 , H01L33/62
Abstract: A method of producing sensors includes providing a carrier plate; arranging semiconductor chips on the carrier plate, wherein the semiconductor chips include at least radiation-detecting semiconductor chips; providing radiation-transmissive optical elements on the carrier plate provided with the semiconductor chips, wherein a plurality of radiation-transmissive optical elements are provided jointly on the carrier plate provided with the semiconductor chips; and singulating the carrier plate provided with the semiconductor chips and the radiation-transmissive optical elements, thereby forming separate sensors including a section of the carrier plate, at least one radiation-detecting semiconductor chip and at least one radiation-transmissive optical element.
-
公开(公告)号:US11530987B2
公开(公告)日:2022-12-20
申请号:US16763923
申请日:2018-11-23
Applicant: OSRAM OLED GmbH
Inventor: Matthias Sperl , Tim Boescke , Daniele Brunazzo
Abstract: A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.
-
公开(公告)号:US11222999B2
公开(公告)日:2022-01-11
申请号:US16649551
申请日:2018-09-21
Applicant: OSRAM OLED GmbH
Inventor: Reiner Windisch , Florian Bösl , Andreas Dobner , Matthias Sperl
Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.
-
公开(公告)号:US10763245B2
公开(公告)日:2020-09-01
申请号:US15719810
申请日:2017-09-29
Applicant: OSRAM OLED GmbH
Inventor: Luca Haiberger , Matthias Sperl
IPC: H01L25/075 , H01L23/31 , H01L33/58 , H01L23/00 , H01L33/54 , H01L33/60 , H01L33/62 , H01L33/52 , H01L33/30
Abstract: An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.
-
-
-
-
-
-