Optoelectronic semiconductor component and biometric sensor

    公开(公告)号:US11239398B2

    公开(公告)日:2022-02-01

    申请号:US16638142

    申请日:2018-07-26

    Abstract: An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.

    Semiconductor light source, operating method and spectrometer

    公开(公告)号:US11371883B2

    公开(公告)日:2022-06-28

    申请号:US16754754

    申请日:2018-10-09

    Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

    SEMICONDUCTOR LIGHT SOURCE, OPERATING METHOD AND SPECTROMETER

    公开(公告)号:US20200309597A1

    公开(公告)日:2020-10-01

    申请号:US16754754

    申请日:2018-10-09

    Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE WITH FIRST AND SECOND OPTOELECTRONIC ELEMENTS

    公开(公告)号:US20210193860A1

    公开(公告)日:2021-06-24

    申请号:US17262238

    申请日:2019-07-23

    Abstract: An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.

    Semiconductor laser and method for producing a semiconductor laser

    公开(公告)号:US10886704B2

    公开(公告)日:2021-01-05

    申请号:US16711186

    申请日:2019-12-11

    Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

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