公开(公告)号：US20180375002A1

公开(公告)日：2018-12-27

申请号：US16072865

申请日：2017-01-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas LOEFFLER ,  Adam BAUER ,  Matthias PETER ,  Michael BINDER

IPC: H01L33/50 ,  H01L33/06 ,  H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L33/32

Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.

公开(公告)号：US20180097146A1

公开(公告)日：2018-04-05

申请号：US15566678

申请日：2016-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adam BAUER ,  Andreas LOEFFLER

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/20 ,  H05B33/08

CPC classification number: H01L33/08 ,  H01L33/04 ,  H01L33/06 ,  H01L33/502

Abstract: The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).