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    Optoelectronic Semiconductor Component
    2.
    发明申请
    Optoelectronic Semiconductor Component 有权

    公开(公告)号：US20220393058A1

    公开(公告)日：2022-12-08

    申请号：US17774104

    申请日：2020-11-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Michael Binder ,  Andreas Rückerl ,  Roland Zeisel ,  Tobias Meyer ,  Kerstin Neveling ,  Christine Rafael ,  Moses Richter ,  Rainer Hartmann ,  Clemens Vierheilig

    IPC: H01L33/00 ,  H01L33/44

    Abstract: In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

    Optoelectronic Semiconductor Chip
    3.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开

    公开(公告)号：US20190259911A1

    公开(公告)日：2019-08-22

    申请号：US16315463

    申请日：2017-07-11

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Roland Zeisel ,  Michael Binder ,  Jens Ebbecke ,  Tobias Meyer

    IPC: H01L33/22 ,  H01L33/06 ,  H01L33/02

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

    Optoelectronic semiconductor component
    5.
    发明授权
    Optoelectronic semiconductor component 有权

    公开(公告)号：US10580941B2

    公开(公告)日：2020-03-03

    申请号：US15788645

    申请日：2017-10-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Michael Binder ,  Alexander Linkov ,  Thomas Zeiler ,  Peter Brick

    IPC: H01L33/48 ,  H01L33/44 ,  H01L33/54

    Abstract: An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 μm.

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