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公开(公告)号：US11955588B2
公开(公告)日：2024-04-09
申请号：US17298879
申请日：2019-11-18
CPC分类号： H01L33/62 , H01L33/005 , H01L2933/0066
摘要： In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.
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公开(公告)号：US20220393059A1
公开(公告)日：2022-12-08
申请号：US17771368
申请日：2020-10-06
发明人： Korbinian Perzlmaier , Peter Stauß , Alexander F. Pfeuffer , Christoph Klemp , Kerstin Neveling , Andreas Biebersdorf
IPC分类号： H01L33/00 , H01L21/683
摘要： In an embodiment a component composite includes an auxiliary carrier, a plurality of components, a retaining structure and an electrically conductive sacrificial layer, wherein each of the components has a connection layer which faces the sacrificial layer and is electrically conductively connected to the sacrificial layer, wherein the sacrificial layer is arranged in vertical direction between the auxiliary carrier and the components, and wherein the sacrificial layer is to be removable and the components are mechanically connected to the auxiliary carrier only via the retaining structure in addition to the sacrificial layer.
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公开(公告)号：US20220069183A1
公开(公告)日：2022-03-03
申请号：US17298879
申请日：2019-11-18
摘要： In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.
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公开(公告)号：US20220393058A1
公开(公告)日：2022-12-08
申请号：US17774104
申请日：2020-11-03
发明人： Michael Binder , Andreas Rückerl , Roland Zeisel , Tobias Meyer , Kerstin Neveling , Christine Rafael , Moses Richter , Rainer Hartmann , Clemens Vierheilig
摘要： In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.
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