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公开(公告)号：US20220416133A1
公开(公告)日：2022-12-29
申请号：US17757579
申请日：2020-12-10
发明人： Christian Betthausen , Olivier Leray , Muyuan Li , Benjamin Gruber , Michael Steyer , Alexander Linkov , Stefan Handl
摘要： In an embodiment a method for operating an optoelectronic semiconductor component includes providing the optoelectronic semiconductor component having an optoelectronic semiconductor chip and a casing comprising a matrix material, wherein the semiconductor chip is embedded into the casing, and wherein optically inactive particles have been introduced as crack nuclei into the matrix material of the casing, and operating the optoelectronic semiconductor component such that cavities form entirely within the casing for at least some of the crack nuclei.
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公开(公告)号：US11195976B2
公开(公告)日：2021-12-07
申请号：US16604573
申请日：2018-03-29
摘要： An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.
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公开(公告)号：US10916686B2
公开(公告)日：2021-02-09
申请号：US15033664
申请日：2014-11-04
IPC分类号： H01L33/58
摘要： An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.
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公开(公告)号：US20180145211A1
公开(公告)日：2018-05-24
申请号：US15577626
申请日：2016-05-27
CPC分类号： H01L33/08 , G02B1/005 , G02B5/04 , G06T7/521 , H01L33/0045 , H01L33/105 , H01L33/58
摘要： An optoelectronic arrangement that produces a light pattern includes a light-emitting diode chip configured to emit electromagnetic radiation on its upper side and forming a first two-dimensional pattern on the upper side of the light-emitting diode chip, and an optically imaging element configured to project electromagnetic radiation emitted by the light-emitting diode chip into an environment of the optoelectronic arrangement.
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公开(公告)号：US09683888B2
公开(公告)日：2017-06-20
申请号：US14423695
申请日：2013-08-22
CPC分类号： G01J1/0425 , G01J1/0474 , G01J1/42 , G01J2001/4252 , G01M11/30
摘要： The invention relates to a method for measuring a light radiation (300) emitted by a light-emitting diode (210). In the method, an end (121) of an optical fiber (120) which is connected to a measuring device (130) is irradiated with the light radiation (300), which is emitted by the light-emitting diode (210), through an optical device (140), so that a portion of the light radiation (300) is coupled into the optical fiber (120) and is guided to the measuring device (130). The optical device (140) causes the light radiation (300) passing through the optical device (140) to be emitted in diffuse form in the direction of the end (121) of the optical fiber (120). The invention also relates to an apparatus (100) for measuring a light radiation (300) emitted by a light-emitting diode (210).
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公开(公告)号：US20170077071A1
公开(公告)日：2017-03-16
申请号：US15342261
申请日：2016-11-03
发明人： Ralph Wirth , Alexander Linkov
CPC分类号： H01L25/0753 , H01L27/15 , H01L33/30 , H01L33/32 , H01L33/483 , H01L33/50 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic component for mixing electromagnetic radiation having different wavelengths, for example, for the far field is disclosed. In an embodiment the optoelectronic component includes a carrier, at least one first semiconductor chip arranged on the carrier and having a first radiation exit surface for emitting electromagnetic radiation in a first spectral range and at least one second semiconductor chip arranged on the carrier and having a second radiation exit surface for emitting electromagnetic radiation in a second spectral range, wherein a diffusing layer is arranged on the first and second radiation exit surfaces of the semiconductor chips that face away from the carrier and wherein a reflecting layer is arranged between the first semiconductor chip and the second semiconductor chip, the first and second radiation exit surfaces being free from the reflecting layer at least in regions.
摘要翻译： 公开了用于混合具有不同波长的电磁辐射的光电子部件，例如用于远场。 在一个实施例中，光电子部件包括载体，布置在载体上的至少一个第一半导体芯片，并具有用于在第一光谱范围内发射电磁辐射的第一辐射出射表面和布置在载体上的至少一个第二半导体芯片， 用于在第二光谱范围内发射电磁辐射的第二辐射出射表面，其中散射层布置在所述半导体芯片的远离所述载体的所述第一和第二辐射出射表面上，并且其中反射层布置在所述第一半导体芯片 和所述第二半导体芯片，所述第一和第二辐射出射表面至少在区域中不含所述反射层。
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公开(公告)号：US20150346397A1
公开(公告)日：2015-12-03
申请号：US14430202
申请日：2013-09-13
CPC分类号： G02B5/0294 , G02B5/0242 , G02B5/0247 , G02B5/0263 , G02B5/0278 , H01L33/502 , H01L33/504 , H01L33/505 , H01L33/56 , H01L33/58 , H01L2933/0091
摘要： The invention relates to an optoelectronic device (101), comprising: —a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, —a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, —a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).
摘要翻译： 本发明涉及一种光电器件（101），包括： - 半导体层序列（103），包括用于发射电磁辐射的发射极层（105）， - 转换器（113），用于将具有第一波长的电磁辐射转换成电磁 具有不同于第一波长的第二波长的辐射， - 散射体（109），用于将由发射极层（105）发射的电磁辐射的至少一部分沿着转换器（113）的方向散射，以便转换 至少一部分发射的电磁辐射，其中散射体（109）包括正的温度依赖的散射截面，因此随着温度的升高，电磁辐射在散射体（109）中的散射在 可以提高转换器的方向。 本发明还涉及散射体（109）。
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公开(公告)号：US20150204718A1
公开(公告)日：2015-07-23
申请号：US14423695
申请日：2013-08-22
CPC分类号： G01J1/0425 , G01J1/0474 , G01J1/42 , G01J2001/4252 , G01M11/30
摘要： The invention relates to a method for measuring a light radiation (300) emitted by a light-emitting diode (210). In the method, an end (121) of an optical fibre (120) which is connected to a measuring device (130) is irradiated with the light radiation (300), which is emitted by the light-emitting diode (210), through an optical device (140), so that a portion of the light radiation (300) is coupled into the optical fibre (120) and is guided to the measuring device (130). The optical device (140) causes the light radiation (300) passing through the optical device (140) to be emitted in diffuse form in the direction of the end (121) of the optical fibre (120). The invention also relates to an apparatus (100) for measuring a light radiation (300) emitted by a light-emitting diode (210).
摘要翻译： 本发明涉及一种用于测量由发光二极管（210）发射的光辐射（300）的方法。 在该方法中，连接到测量装置（130）的光纤（120）的端部（121）被由发光二极管（210）发射的光辐射（300）照射通过 光学装置（140），使得光辐射（300）的一部分耦合到光纤（120）中并被引导到测量装置（130）。 光学装置（140）使通过光学装置（140）的光辐射沿着光纤（120）的端部（121）的方向以漫射形式发射。 本发明还涉及一种用于测量由发光二极管（210）发射的光辐射（300）的装置（100）。
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公开(公告)号：US20190207066A1
公开(公告)日：2019-07-04
申请号：US16327691
申请日：2017-08-02
发明人： Britta Göötz , Alexander Linkov
IPC分类号： H01L33/50 , H01L25/16 , H01L25/075 , H01L33/56 , F21S41/00
CPC分类号： H01L33/504 , F21S41/00 , H01L25/0753 , H01L25/167 , H01L27/156 , H01L33/08 , H01L33/505 , H01L33/56 , H01L33/58 , H01L2933/0041 , H01L2933/0058
摘要： An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range and a plurality of conversion elements, wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range, wherein each pixel has a radiation exit surface and a conversion element is arranged on each radiation exit surface, and wherein each conversion element has a greater thickness in a central region than in a peripheral region.
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公开(公告)号：US20190165225A1
公开(公告)日：2019-05-30
申请号：US16092026
申请日：2017-04-06
发明人： Michael Kühnelt , Alexander Linkov
摘要： A component includes a semiconductor chip, an envelope and a reflector, wherein the semiconductor chip has a front side, a rear side facing away from the front side and side faces, and the semiconductor chip is electrically contactable at least partially via its rear side, the reflector completely encloses the semiconductor chip in lateral directions, has a first subregion and a second subregion directly adjoining the first subregion, and the first subregion is spatially spaced from the semiconductor chip and the second subregion directly adjoins the semiconductor chip, the envelope covers the front side of the semiconductor chip completely and the side surfaces of the semiconductor chip at least partially so that the envelope has an interface facing the semiconductor chip and reproducing a contour of the semiconductor chip in regions, and in the component is free of a lead frame enclosed by a molded body.
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