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    Optoelectronic Semiconductor Component
    1.
    发明申请
    Optoelectronic Semiconductor Component 有权

    公开(公告)号：US20220393058A1

    公开(公告)日：2022-12-08

    申请号：US17774104

    申请日：2020-11-03

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Michael Binder ,  Andreas Rückerl ,  Roland Zeisel ,  Tobias Meyer ,  Kerstin Neveling ,  Christine Rafael ,  Moses Richter ,  Rainer Hartmann ,  Clemens Vierheilig

    IPC分类号： H01L33/00 ,  H01L33/44

    摘要： In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

    Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip
    5.
    发明授权
    Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip 有权
    半导体层序列和操作光电子半导体芯片的方法

    公开(公告)号：US09553231B2

    公开(公告)日：2017-01-24

    申请号：US14769831

    申请日：2014-04-11

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Tobias Meyer ,  Jürgen Off

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/10 ,  H01S5/343 ,  H01S5/34 ,  H01L33/32 ,  H05B33/08 ,  H01L33/08 ,  H01S5/30

    CPC分类号： H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01S5/1096 ,  H01S5/3086 ,  H01S5/3408 ,  H01S5/34333 ,  H05B33/0803

    摘要： The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N quantum wells with N≧2. At a first working point (W1) at a first current density, the quantum wells have a first emission wavelength and, at a second working point (W2) at a second current density, a second emission wavelength. At least two of the first emission wavelengths differ from one another and at least some of the second emission wavelengths differ from the first emission wavelengths. The first current density is smaller than the second current density and the current densities differ from one another at least by a factor of 2.

    摘要翻译： 半导体层序列包括n导电层，p导电层和位于它们之间的有源区。 有源区包括N≥2的N个量子阱。 在第一电流密度的第一工作点（W1）处，量子阱具有第一发射波长，并且在第二工作点（W2）处具有第二电流密度，具有第二发射波长。 第一发射波长中的至少两个彼此不同，并且至少一些第二发射波长与第一发射波长不同。 第一电流密度小于第二电流密度，并且电流密度彼此至少彼此不同。

    Optoelectronic Semiconductor Chip
    8.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开

    公开(公告)号：US20190259911A1

    公开(公告)日：2019-08-22

    申请号：US16315463

    申请日：2017-07-11

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Roland Zeisel ,  Michael Binder ,  Jens Ebbecke ,  Tobias Meyer

    IPC分类号： H01L33/22 ,  H01L33/06 ,  H01L33/02

    摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.