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1.发明授权Method for preparing doped organic semiconductor materials and formulation utilized therein 有权用于制备掺杂有机半导体材料的方法及其中使用的配方公开(公告)号：US09065055B2
公开(公告)日：2015-06-23
申请号：US12293765
申请日：2007-03-21
申请人： Olaf Zeika , Andrea Lux , Andre Gruessing , Michael Limmert , Horst Hartmann , Ansgar Werner , Martin Ammann
发明人： Olaf Zeika , Andrea Lux , Andre Gruessing , Michael Limmert , Horst Hartmann , Ansgar Werner , Martin Ammann
IPC分类号： C30B30/00 , H01L31/04 , H01L51/00 , C07D285/10 , C07D271/107 , C09K11/06 , H05B33/14 , H05B33/20 , H01L51/50
CPC分类号： H01L51/002 , C07D271/107 , C07D285/10 , C09K11/06 , C09K2211/1011 , C09K2211/1029 , C09K2211/1088 , H01L51/0053 , H01L51/0054 , H01L51/0062 , H01L51/0067 , H01L51/007 , H01L51/0081 , H01L51/5052 , H05B33/14 , H05B33/20 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a method for preparing doped organic semiconductor materials as well as a formulation which may be utilized in that method. The doped organic semiconductor materials are prepared by preparing a solution or suspension containing at least one dopant precursor, at least one organic material to be doped, and a solvent. The solution or suspension is then applied onto a substrate. After removing the solvent, the dopant precursor is converted into a dopant by application of activation energy. The dopant precursor, which is a dimer, oligomer, polymer, dispiro compound, or polycycle, is cleaved by the application of activation energy.
摘要翻译： 本发明涉及一种制备掺杂有机半导体材料的方法以及可用于该方法的制剂。 通过制备含有至少一种掺杂剂前体，至少一种待掺杂的有机材料和溶剂的溶液或悬浮液来制备掺杂的有机半导体材料。 然后将溶液或悬浮液施加到基底上。 除去溶剂后，通过施加活化能将掺杂剂前体转化为掺杂剂。 作为二聚体，低聚物，聚合物，二恶烷化合物或多环的掺杂剂前体通过施加活化能而被切割。
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公开(公告)号：US08431046B2
公开(公告)日：2013-04-30
申请号：US12293757
申请日：2007-03-16
申请人： Olaf Zeika , Andrea Lux , Andre Gruessing , Michael Limmert , Horst Hartmann , Ansgar Werner
发明人： Olaf Zeika , Andrea Lux , Andre Gruessing , Michael Limmert , Horst Hartmann , Ansgar Werner
CPC分类号： H01L51/002 , C08G61/00 , H01L51/0051 , H01L51/0067 , H01L51/0071 , H01L51/0081 , Y02E10/549
摘要： The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae.
摘要翻译： 本发明涉及用作掺杂有机半导体基质材料的掺杂剂的杂环基或二价双键，其二聚体，低聚物，聚合物，二恶烷化合物和多环的用途，其中掺杂剂具有基于下式的结构。
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公开(公告)号：US20110108772A1
公开(公告)日：2011-05-12
申请号：US12293757
申请日：2007-03-16
申请人： Olaf Zeika , Andrea Lux , Andre Grussing , Michael Limmert , Horst Hartmann , Ansgar Werner
发明人： Olaf Zeika , Andrea Lux , Andre Grussing , Michael Limmert , Horst Hartmann , Ansgar Werner
CPC分类号： H01L51/002 , C08G61/00 , H01L51/0051 , H01L51/0067 , H01L51/0071 , H01L51/0081 , Y02E10/549
摘要： The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae.
摘要翻译： 本发明涉及用作掺杂有机半导体基质材料的掺杂剂的杂环基或二价双键，其二聚体，低聚物，聚合物，二恶烷化合物和多环的用途，其中掺杂剂具有基于下式的结构。
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4.发明申请Method for Preparing Doped Organic Semiconductor Materials and Formulation Utilized Therein 有权掺杂有机半导体材料的制备方法及其制备方法公开(公告)号：US20100233844A1
公开(公告)日：2010-09-16
申请号：US12293765
申请日：2007-03-21
申请人： Olaf Zeika , Andrea Lux , Andre Grussing , Michael Limmert , Horst Hartmann , Ansgar Werner , Martin Ammann
发明人： Olaf Zeika , Andrea Lux , Andre Grussing , Michael Limmert , Horst Hartmann , Ansgar Werner , Martin Ammann
CPC分类号： H01L51/002 , C07D271/107 , C07D285/10 , C09K11/06 , C09K2211/1011 , C09K2211/1029 , C09K2211/1088 , H01L51/0053 , H01L51/0054 , H01L51/0062 , H01L51/0067 , H01L51/007 , H01L51/0081 , H01L51/5052 , H05B33/14 , H05B33/20 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a method for preparing doped organic semiconductor materials
摘要翻译： 本发明涉及一种制备掺杂有机半导体材料的方法
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5.发明授权公开(公告)号：US08134146B2
公开(公告)日：2012-03-13
申请号：US11688777
申请日：2007-03-20
申请人： Michael Limmert , Olaf Zeika , Martin Ammann , Horst Hartmann , Ansgar Werner
发明人： Michael Limmert , Olaf Zeika , Martin Ammann , Horst Hartmann , Ansgar Werner
IPC分类号： H01L51/00 , C07D207/00 , C07D209/56 , C07D221/00 , C07D239/00 , C07D241/00 , C07D245/00 , C07D307/00 , C07D333/00
CPC分类号： H01L51/0051 , C07D235/02 , C08G61/00 , H01L51/002 , H01L51/0067 , H01L51/0071 , H01L51/0081 , H01L51/5076 , Y02E10/549
摘要： The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof to organic semiconductive materials and to electronic and optoelectronic components.
摘要翻译： 本发明涉及其用于有机半导体材料和电子和光电子组分的杂环基团或双基，其二聚体，低聚物，聚合物，二氢化合物和多环体。
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6.发明授权公开(公告)号：US09118019B2
公开(公告)日：2015-08-25
申请号：US13398162
申请日：2012-02-16
申请人： Michael Limmert , Olaf Zeika , Martin Amman , Horst Hartmann , Ansgar Werner
发明人： Michael Limmert , Olaf Zeika , Martin Amman , Horst Hartmann , Ansgar Werner
IPC分类号： C07D235/02 , C08G61/00 , H01L51/30 , H01L51/00
CPC分类号： H01L51/0051 , C07D235/02 , C08G61/00 , H01L51/002 , H01L51/0067 , H01L51/0071 , H01L51/0081 , H01L51/5076 , Y02E10/549
摘要： The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components.
摘要翻译： 本发明涉及其有机半导体材料和电子和光电子组件的杂环基团或双基，其二聚体，低聚物，聚合物，二氢化合物和多环体。
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7.发明申请Heterocyclic Radical or Diradical, the Dimers, Oligomers, Polymers, Dispiro Compounds and Polycycles Thereof, the Use Thereof, Organic Semiconductive Material and Electronic or Optoelectronic Component 有权杂环自由基或双基，二聚体，低聚物，聚合物，脱胶化合物和多环体，其使用，有机半导体材料和电子或光电子部件公开(公告)号：US20070252140A1
公开(公告)日：2007-11-01
申请号：US11688777
申请日：2007-03-20
申请人： Michael Limmert , Olaf Zeika , Martin Ammann , Horst Hartmann , Ansgar Werner
发明人： Michael Limmert , Olaf Zeika , Martin Ammann , Horst Hartmann , Ansgar Werner
IPC分类号： H01L51/00 , C07D207/00 , C07D209/56 , C07D221/00 , C07D239/00 , C07D241/00 , C07D245/00 , C07D307/00 , C07D333/00
CPC分类号： H01L51/0051 , C07D235/02 , C08G61/00 , H01L51/002 , H01L51/0067 , H01L51/0071 , H01L51/0081 , H01L51/5076 , Y02E10/549
摘要： The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof to organic semiconductive materials and to electronic and optoelectronic components.
摘要翻译： 本发明涉及其用于有机半导体材料和电子和光电子组分的杂环基团或双基，其二聚体，低聚物，聚合物，二氢化合物和多环体。
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8.发明申请Heterocyclic Radical or Diradical, The Dimers, Oligomers, Polymers, Dispiro Compounds and Polycycles Thereof, the Use Thereof, Organic Semiconductive Material and Electronic or Optoelectronic Component 审中-公开杂环自由基或双基，二聚体，低聚物，聚合物，脱胶化合物及其多环，其使用，有机半导体材料和电子或光电子部件公开(公告)号：US20120146012A1
公开(公告)日：2012-06-14
申请号：US13398162
申请日：2012-02-16
申请人： Michael Limmert , Olaf Zeika , Martin Amman , Horst Hartmann , Ansgar Werner
发明人： Michael Limmert , Olaf Zeika , Martin Amman , Horst Hartmann , Ansgar Werner
IPC分类号： C07D487/14 , H01L51/54 , H01L51/46 , C07D403/06 , H01L51/30
CPC分类号： H01L51/0051 , C07D235/02 , C08G61/00 , H01L51/002 , H01L51/0067 , H01L51/0071 , H01L51/0081 , H01L51/5076 , Y02E10/549
摘要： The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components.
摘要翻译： 本发明涉及其有机半导体材料和电子和光电子组件的杂环基团或双基，其二聚体，低聚物，聚合物，二氢化合物和多环体。
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公开(公告)号：US20100102709A1
公开(公告)日：2010-04-29
申请号：US12264511
申请日：2008-11-04
申请人： Olaf Zeika , Steffen Willmann , Andrea Lux , Horst Hartmann , Sascha Dorok , Ansgar Werner
发明人： Olaf Zeika , Steffen Willmann , Andrea Lux , Horst Hartmann , Sascha Dorok , Ansgar Werner
IPC分类号： H01J1/63 , C07C255/03 , H01B1/12 , C07D213/57
CPC分类号： C07D213/61 , C07C255/35 , C07C255/51 , C07C2601/02 , H01L51/002 , H01L51/005 , H01L51/0059 , H01L51/0078 , H01L51/5052 , Y02E10/549
摘要： The present invention relates to radialene compounds as well as to their use as doping agent for doping an organic semiconductive matrix material, as blocker material, as charge injection layer, as electrode material as well as organic semiconductor, as well as electronic components and organic semiconductive materials using them.
摘要翻译： 本发明涉及天然烯化合物以及它们作为掺杂剂用作掺杂有机半导体基质材料，作为阻挡材料，作为电荷注入层，作为电极材料以及有机半导体以及电子元件和有机半导体的用途 使用它们的材料
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10.发明申请Use of a Metal Complex as an N-Dopant for an Organic Semiconducting Matrix Material, Organic of Semiconducting Material and Electronic Component, and also a Dopant and Ligand and Process for Producing same 有权使用金属络合物作为有机半导体基质材料的有机半导体材料和电子元件的N掺杂物，以及掺杂剂和配体及其制备方法公开(公告)号：US20090212280A1
公开(公告)日：2009-08-27
申请号：US10585215
申请日：2005-03-03
申请人： Ansgar Werner , Olaf Kühl , Simon Gessler , Horst Hartmann , Andre Grüssing , Michael Limmert , Andrea Lux , Kentaro Harada
发明人： Ansgar Werner , Olaf Kühl , Simon Gessler , Horst Hartmann , Andre Grüssing , Michael Limmert , Andrea Lux , Kentaro Harada
IPC分类号： H01L51/42 , C07D471/14 , C07F11/00 , H01L51/30 , H01L21/24
CPC分类号： H01L51/0084 , C09K11/06 , C09K2211/1029 , C09K2211/1037 , C09K2211/1044 , C09K2211/1059 , C09K2211/1092 , C09K2211/186 , C09K2211/188 , H01L51/002 , H01L51/0062 , H01L51/0067 , H01L51/0071 , H01L51/0077 , H01L51/008 , H01L51/0081 , H01L51/5092 , Y02E10/549 , Y02P70/521
摘要： A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
摘要翻译： 提供了一种使用金属络合物作为掺杂有机半导体基质材料的n掺杂剂以改变其后者的电特性的方法。 为了向具有低还原电位的n掺杂的有机半导体提供具有低还原电位的基质材料，在实现高电导率的同时，n-掺杂剂是具有中性或带电过渡金属原子作为中心原子的中性富电子金属络合物， 至少16价电子。 络合物可以是多核的并且可以具有至少一个金属 - 金属键。 至少一个配体可以与中心原子形成π配合物，其可以是桥配体，或者它可以含有至少一个碳负离子碳原子或二价原子。 提供了提供新型n-掺杂剂的方法。
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