摘要:
Substrate treatment apparatus, printers, and methods to treat a print substrate are disclosed. An example apparatus includes a first roller to receive a treatment fluid from a reservoir, a blade to adjust an amount of the treatment fluid present on the first roller, and a second roller to receive an adjusted amount of the treatment fluid from the first roller and to apply the treatment fluid to a substrate, the treatment fluid applied to the substrate to result in a layer of treatment fluid less than about 0.4 micrometers thick on the substrate.
摘要:
Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
摘要:
An imaging method includes coating a transfer member with an adhesion promoter in a liquid state, changing the adhesion promoter on the transfer member from the liquid state to at least one of a solid state and a gel state, depositing a liquid marking agent on the solidified adhesion promoter corresponding to an image, changing a state of the adhesion promoter from the solid state to the flowable state, and transferring the liquid marking agent and the adhesion promoter in the flowable state from the transfer member to a substrate to form a hard version of the image thereon.
摘要:
Printer charging blades and printers are disclosed. An example charging blade for a printer includes an insulating layer to contact a photo imaging surface at an angle to apply pressure to the photo imaging surface, the pressure to control an amount of material present on the photo imaging surface, and a conductive layer attached to a side of the insulating layer, the conductive layer to be charged and to apply a first charge to the photo imaging surface.
摘要:
A memory device includes an array of magnetic storage cells. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.
摘要:
Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
摘要:
A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要:
An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要:
The present disclosure relates to a solid-state storage device. In one arrangement, the storage device comprises a memory device comprising one of an atomic resolution storage (ARS) device and a magnetic random access memory (MRAM) device, a controller, and an integral connector that is used to directly connect the storage device to another device.
摘要:
A one-time programmable memory cell includes a fuse and an anti-fuse in series. The memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite, typically dominated by the relatively high resistance of the anti-fuse. In the written state, the resistance is infinite because the breakdown of the fuse resulting in an open circuit. The cell may be programmed by applying a critical voltage across the cell generating a critical current to cause the fuse to become open. When critical voltage is applied, this generally causes the anti-fuse to break down, which in turn causes a pulse of high current to be applied to the fuse. The states are detected by applying a read voltage across the memory cell. If the memory has not been programmed, then a measurable amount flows. Otherwise, no current flows.