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公开(公告)号：US20100038535A1
公开(公告)日：2010-02-18
申请号：US12560091
申请日：2009-09-15
申请人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
发明人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
CPC分类号： H01J37/28 , G01B15/00 , G01N23/225 , H01J2237/2814
摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.
摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。
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2.发明授权公开(公告)号：US07659508B2
公开(公告)日：2010-02-09
申请号：US10450852
申请日：2002-03-27
申请人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
发明人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： H01J37/28 , G01B15/00 , G01N23/225 , H01J2237/2814
摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.
摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。
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公开(公告)号：US08080789B2
公开(公告)日：2011-12-20
申请号：US12560091
申请日：2009-09-15
申请人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
发明人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
IPC分类号： H01J37/28 , G01N23/225
CPC分类号： H01J37/28 , G01B15/00 , G01N23/225 , H01J2237/2814
摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.
摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。
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4.发明申请公开(公告)号：US20080201091A1
公开(公告)日：2008-08-21
申请号：US12076355
申请日：2008-03-17
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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公开(公告)号：US20060219918A1
公开(公告)日：2006-10-05
申请号：US11429237
申请日：2006-05-08
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
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公开(公告)号：US20050161600A1
公开(公告)日：2005-07-28
申请号：US11077130
申请日：2005-03-11
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
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公开(公告)号：US07372028B2
公开(公告)日：2008-05-13
申请号：US11429237
申请日：2006-05-08
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
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8.发明授权公开(公告)号：US08835844B2
公开(公告)日：2014-09-16
申请号：US12710679
申请日：2010-02-23
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G01N23/04 , G01N23/225 , H01J37/28 , H01J37/244 , H01J37/21 , H01J37/26
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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9.发明授权公开(公告)号：US07700918B2
公开(公告)日：2010-04-20
申请号：US12076355
申请日：2008-03-17
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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10.发明授权公开(公告)号：US07087899B2
公开(公告)日：2006-08-08
申请号：US11077130
申请日：2005-03-11
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G21K7/00
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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