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1.发明授权Electrostatic charge measurement method, focus adjustment method, and scanning electron microscope 有权静电电荷测量方法，焦点调整方法和扫描电子显微镜公开(公告)号：US07745782B2
公开(公告)日：2010-06-29
申请号：US12038641
申请日：2008-02-27
CPC分类号： G01N23/225 , H01J2237/004 , H01J2237/216 , H01J2237/24564 , H01J2237/28
摘要： A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.
摘要翻译： 公开了一种方法和装置，用于当通过扫描电子束测量样品的静电电荷量或通过扫描电子束时，基于电子束扫描，基于静电电荷存储来抑制静电电荷量或散焦的误差。 静电电荷测量方法，焦点调节方法或用于测量静电电荷量或控制对样品的施加电压的扫描电子显微镜，在将电子束的扫描位置移动到样品上的同时，将能量过滤器的施加电压改变 。
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公开(公告)号：US20100038535A1
公开(公告)日：2010-02-18
申请号：US12560091
申请日：2009-09-15
申请人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
发明人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
CPC分类号： H01J37/28 , G01B15/00 , G01N23/225 , H01J2237/2814
摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.
摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。
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3.发明申请公开(公告)号：US20080201091A1
公开(公告)日：2008-08-21
申请号：US12076355
申请日：2008-03-17
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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公开(公告)号：US20060219918A1
公开(公告)日：2006-10-05
申请号：US11429237
申请日：2006-05-08
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
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公开(公告)号：US20050161600A1
公开(公告)日：2005-07-28
申请号：US11077130
申请日：2005-03-11
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
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6.发明授权公开(公告)号：US08835844B2
公开(公告)日：2014-09-16
申请号：US12710679
申请日：2010-02-23
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
IPC分类号： G01N23/04 , G01N23/225 , H01J37/28 , H01J37/244 , H01J37/21 , H01J37/26
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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7.发明申请公开(公告)号：US20110139981A1
公开(公告)日：2011-06-16
申请号：US13059537
申请日：2009-08-08
申请人： Ritsuo Fukaya , Nobuhiro Okai , Koki Miyahara , Zhigang Wang
发明人： Ritsuo Fukaya , Nobuhiro Okai , Koki Miyahara , Zhigang Wang
IPC分类号： G01N23/225 , G01N23/00
CPC分类号： H01J37/026 , H01J37/09 , H01J37/15 , H01J37/28 , H01J2237/0041 , H01J2237/0045 , H01J2237/0458
摘要： An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.
摘要翻译： 本发明的目的是提供一种扫描电子显微镜，其目的在于可以控制从样品与其他部件发射的电子的碰撞产生的电子的量，以及使用电子量的控制的样品充电控制方法。 为了实现该目的，提出了一种扫描电子显微镜，其包括电子束可以通过的多个孔，以及用于切换电子束的孔的机构，以及通过切换孔来控制样品充电的方法。 多个孔是至少两个孔。 分别具有不同二次电子发射效率的部分设置在与样品相对的一侧上的至少两个孔的周边部分上。 可以通过切换孔来控制从样品发射的电子的碰撞产生的电子的量。
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公开(公告)号：US07851756B2
公开(公告)日：2010-12-14
申请号：US12182709
申请日：2008-07-30
申请人： Ritsuo Fukaya , Zhigang Wang
发明人： Ritsuo Fukaya , Zhigang Wang
CPC分类号： H01J37/28 , H01J37/026 , H01J37/147 , H01J37/265 , H01J2237/0044
摘要： It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.
摘要翻译： 这是为了防止在观察包括绝缘材料的试样时由试样充电引起的图像漂移。 在扫描线和扫描线的预定顺序方向上沿预定方向执行第一扫描，并且在与预定扫描方向不同的扫描方向上和沿与预定顺序方向不同的顺序方向上执行第二扫描。 可以通过在执行第一次扫描之后重复执行第二扫描的处理并且要求通过第二扫描获得的帧的算术平均来创建图像。 可以通过对由第一扫描获得的至少一帧和通过第二扫描获得的至少一帧进行算术平均来创建图像。
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9.发明授权公开(公告)号：US07700918B2
公开(公告)日：2010-04-20
申请号：US12076355
申请日：2008-03-17
申请人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
发明人： Makoto Ezumi , Yoichi Ose , Akira Ikegami , Hideo Todokoro , Tatsuaki Ishijima , Takahiro Sato , Ritsuo Fukaya , Kazunari Asao
CPC分类号： H01J37/265 , G01N23/2251 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/0041 , H01J2237/216 , H01J2237/244 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。
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10.发明授权Liquid crystal display device utilizing in-plane-switching system and having alignment film separating picture element electrode or counter electrode from liquid crystal layer 有权利用面内切换系统的液晶显示装置，具有将液晶层与图像元素电极或对置电极分离的取向膜公开(公告)号：US06300995B1
公开(公告)日：2001-10-09
申请号：US09405229
申请日：1999-09-24
申请人： Masatoshi Wakagi , Masahiko Ando , Ritsuo Fukaya
发明人： Masatoshi Wakagi , Masahiko Ando , Ritsuo Fukaya
IPC分类号： G02F11345
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/1368
摘要： A liquid crystal display device includes a pair of substrates, a liquid crystal layer supported between the pair of substrates, a plurality of gate electric wirings provided on one of the pair of substrates, a plurality of drain electric wirings respectively intersecting with the plurality of gate electric wirings in a matrix configuration, a plurality of thin film transistors formed on respective points of the gate electric wirings and the drain electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements with at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, and a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings. A plurality of picture element electrodes made of at least one of conductive oxide and graphite are connected to the thin film transistors and extend in the same direction as the drain electric wirings. An electric field having a component parallel to one of the pair of substrates is produced in the liquid crystal layer by an electric voltage applied between the counter electrodes and the picture element electrodes, and the respective picture element electrodes are in contact with the liquid crystal layer directly or through an alignment film.
摘要翻译： 液晶显示装置包括一对基板，支撑在该对基板之间的液晶层，设置在一对基板中的一个基板上的多个栅极电布线，分别与多个栅极交叉的多个漏极电布线 形成在矩阵结构中的电布线，形成在栅极电布线和漏极电布线的各个点上的多个薄膜晶体管，沿与栅极电布线相同的方向延伸的多个公共电线，多个像素 其中至少一个图像元素分别被栅极电布线和漏极布线围绕，以及连接到公共电线并沿与漏电布线相同的方向延伸的多个对置电极。 由导电氧化物和石墨中的至少一种制成的多个像素电极被连接到薄膜晶体管并沿与漏极电布线相同的方向延伸。 通过施加在对置电极和像素电极之间的电压，在液晶层中产生具有与一对基板中的一个基板平行的分量的电场，并且各个像素电极与液晶层接触 直接或通过取向膜。
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