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公开(公告)号：US11220759B2
公开(公告)日：2022-01-11
申请号：US16783229
申请日：2020-02-06
Applicant: OSAKA UNIVERSITY , Panasonic Corporation
Inventor： Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura , Kousuke Murakami , Shinsuke Komatsu , Masahiro Tada , Yoshio Okayama
Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.
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公开(公告)号：US11377757B2
公开(公告)日：2022-07-05
申请号：US16792386
申请日：2020-02-17
Applicant: PANASONIC CORPORATION , OSAKA UNIVERSITY
Inventor： Yoshio Okayama , Shinsuke Komatsu , Masahiro Tada , Yusuke Mori , Masayuki Imanishi , Masashi Yoshimura
Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.
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