公开(公告)号：US11377757B2

公开(公告)日：2022-07-05

申请号：US16792386

申请日：2020-02-17

Applicant: PANASONIC CORPORATION ,  OSAKA UNIVERSITY

Inventor： Yoshio Okayama ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura

IPC: C30B29/40 ,  C30B15/36 ,  C30B15/00 ,  C30B19/02 ,  C30B25/18

Abstract: An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

公开(公告)号：US11795573B2

公开(公告)日：2023-10-24

申请号：US17359949

申请日：2021-06-28

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC: C30B25/16 ,  C30B25/02 ,  H01L21/02 ,  C23C16/30 ,  C30B29/40

CPC classification number: C30B25/02 ,  C23C16/303 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

公开(公告)号：US11155931B2

公开(公告)日：2021-10-26

申请号：US16776647

申请日：2020-01-30

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US11220759B2

公开(公告)日：2022-01-11

申请号：US16783229

申请日：2020-02-06

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yoshio Okayama

IPC: C30B19/10 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US10927476B2

公开(公告)日：2021-02-23

申请号：US16243321

申请日：2019-01-09

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Yoshio Okayama

IPC: C30B9/02 ,  C30B19/02 ,  C30B19/10 ,  C30B29/40

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

公开(公告)号：US10202710B2

公开(公告)日：2019-02-12

申请号：US15123565

申请日：2015-03-03

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC. ,  PANASONIC CORPORATION

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Yoshio Okayama

IPC: C30B29/40 ,  C30B19/02 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/02 ,  B28D5/00 ,  C30B19/12 ,  C30B25/18 ,  C30B29/20 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/30

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

公开(公告)号：US10910511B2

公开(公告)日：2021-02-02

申请号：US16135679

申请日：2018-09-19

Applicant: DISCO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Hiroshi Morikazu ,  Shin Tabata ,  Takumi Shotokuji

IPC: H01L33/18 ,  H01L33/00 ,  C30B25/02 ,  C30B19/02 ,  C30B33/06 ,  C30B29/40 ,  H01L33/32 ,  H01L33/02

Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

公开(公告)号：US10266965B2

公开(公告)日：2019-04-23

申请号：US15123556

申请日：2015-02-26

Applicant: OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Akira Usui ,  Masatomo Shibata ,  Takehiro Yoshida

IPC: C30B19/02 ,  C30B29/40 ,  C30B25/20 ,  C30B29/38 ,  H01L21/02 ,  B28D5/00 ,  C30B19/06 ,  C30B25/18 ,  C30B33/00 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/30

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

公开(公告)号：US20140328742A1

公开(公告)日：2014-11-06

申请号：US14371607

申请日：2013-01-10

Applicant: OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Mamoru Imade ,  Masashi Yoshimura ,  Mihoko Hirao ,  Masayuki Imanishi

IPC: C30B19/02 ,  H01L21/02 ,  H01L29/20

CPC classification number: C30B19/02 ,  C30B19/12 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/007

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality. The method is a method for producing a Group III nitride crystal (13), including: a seed crystal selection step of selecting plural parts of a Group III nitride crystal layer (11) as seed crystals for generation and growth of Group III nitride crystals (13); a contact step of causing the surfaces of the seed crystals to be in contact with an alkali metal melt; a crystal growth step of causing a Group III element and nitrogen to react with each other under a nitrogen-containing atmosphere in the alkali metal melt to generate and grow the Group III nitride crystals (13), wherein the seed crystals are hexagonal crystals, in the seed crystal selection step, the seed crystals are arranged so that m-planes of the respective crystals grown from the seed crystals that are adjacent to each other do not substantially coincide with each other, and in the crystal growth step, the plural Group III nitride crystals (13) grown from the plural seed crystals by the growth of the Group III nitride crystals (13) are bound.

Abstract translation: 本发明提供一种能够生产III型氮化物晶体的方法，该III族氮化物晶体能够生产出具有很少缺陷和高质量的大尺寸的III族氮化物晶体。 该方法是用于制造III族氮化物晶体的方法，包括：选择多个III族氮化物晶体层（11）的多个部分作为晶种产生和生长III族氮化物晶体的籽晶选择步骤（ 13）; 接触步骤，使晶种的表面与碱金属熔体接触; 在碱金属熔液中，在含氮气氛下使III族元素和氮彼此反应的晶体生长步骤，以生成和生长其中晶种为六方晶体的III族氮化物晶体（13） 晶种选择工序中，配置晶种，使得从相互邻接的晶种生长的各晶体的m面基本上不一致，在晶体生长工序中，多组III 通过III族氮化物晶体（13）的生长，从多个晶种生长的氮化物晶体（13）被结合。

公开(公告)号：US20190088816A1

公开(公告)日：2019-03-21

申请号：US16135679

申请日：2018-09-19

Applicant: DISCO CORPORATION ,  OSAKA UNIVERSITY

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masayuki Imanishi ,  Hiroshi Morikazu ,  Shin Tabata ,  Takumi Shotokuji

IPC: H01L33/00 ,  C30B29/40 ,  H01L33/32 ,  H01L33/18

Abstract: There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.