公开(公告)号：US11795573B2

公开(公告)日：2023-10-24

申请号：US17359949

申请日：2021-06-28

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC分类号： C30B25/16 ,  C30B25/02 ,  H01L21/02 ,  C23C16/30 ,  C30B29/40

CPC分类号： C30B25/02 ,  C23C16/303 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

摘要： A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

公开(公告)号：US11220759B2

公开(公告)日：2022-01-11

申请号：US16783229

申请日：2020-02-06

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yoshio Okayama

IPC分类号： C30B19/10 ,  C30B19/12 ,  C30B19/02 ,  C30B29/40

摘要： A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US10927476B2

公开(公告)日：2021-02-23

申请号：US16243321

申请日：2019-01-09

申请人： OSAKA UNIVERSITY ,  Panasonic Corporation

发明人： Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura ,  Kousuke Murakami ,  Yoshio Okayama

IPC分类号： C30B9/02 ,  C30B19/02 ,  C30B19/10 ,  C30B29/40

摘要： A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

公开(公告)号：US10202710B2

公开(公告)日：2019-02-12

申请号：US15123565

申请日：2015-03-03

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC. ,  PANASONIC CORPORATION

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Mamoru Imade ,  Masashi Isemura ,  Yoshio Okayama

IPC分类号： C30B29/40 ,  C30B19/02 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/02 ,  B28D5/00 ,  C30B19/12 ,  C30B25/18 ,  C30B29/20 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/30

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

公开(公告)号：US11377757B2

公开(公告)日：2022-07-05

申请号：US16792386

申请日：2020-02-17

申请人： PANASONIC CORPORATION ,  OSAKA UNIVERSITY

发明人： Yoshio Okayama ,  Shinsuke Komatsu ,  Masahiro Tada ,  Yusuke Mori ,  Masayuki Imanishi ,  Masashi Yoshimura

IPC分类号： C30B29/40 ,  C30B15/36 ,  C30B15/00 ,  C30B19/02 ,  C30B25/18

摘要： An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

公开(公告)号：US11713517B2

公开(公告)日：2023-08-01

申请号：US17023720

申请日：2020-09-17

申请人： Panasonic Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC分类号： C30B29/40 ,  C30B33/08 ,  C30B25/02

CPC分类号： C30B29/406 ,  C30B33/08 ,  C30B25/02

摘要： A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US11713516B2

公开(公告)日：2023-08-01

申请号：US17340416

申请日：2021-06-07

申请人： Panasonic Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Tomoaki Sumi ,  Junichi Takino ,  Yoshio Okayama

IPC分类号： C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  H01L21/02 ,  C01B21/06

CPC分类号： C30B29/38 ,  C30B25/02 ,  C01B21/0602 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02576 ,  H01L21/02645

摘要： A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.

公开(公告)号：US11624128B2

公开(公告)日：2023-04-11

申请号：US17340401

申请日：2021-06-07

申请人： Panasonic Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Tomoaki Sumi ,  Junichi Takino ,  Yoshio Okayama

IPC分类号： C30B29/38 ,  C30B25/02 ,  C01B21/06 ,  C30B29/40 ,  H01L21/02

摘要： A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm−3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.