公开(公告)号：US3014815A

公开(公告)日：1961-12-26

申请号：US76751058

申请日：1958-10-16

Applicant: PHILIPS CORP

Inventor： ANTHONY LELY JAN ,  GOEMAN BOS JULIUS

IPC: C03C17/245 ,  C04B41/45 ,  C04B41/50 ,  C23C16/40 ,  H01B1/00 ,  H01B1/08 ,  H01J5/08

CPC classification number: C04B41/009 ,  C03C17/245 ,  C03C2217/21 ,  C03C2217/211 ,  C03C2217/212 ,  C03C2217/213 ,  C03C2217/215 ,  C03C2217/229 ,  C03C2217/244 ,  C03C2218/152 ,  C04B41/4505 ,  C04B41/5025 ,  C23C16/401 ,  C23C16/402 ,  C23C16/407 ,  H01B1/00 ,  H01B1/08 ,  H01J5/08 ,  C04B35/00

公开(公告)号：US2854364A

公开(公告)日：1958-09-30

申请号：US49238555

申请日：1955-03-07

Applicant: PHILIPS CORP

Inventor： ANTHONY LELY JAN

IPC: C30B23/00 ,  H01B1/04 ,  H01L21/04

CPC classification number: H01L21/0455 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  H01B1/04 ,  Y10S117/906 ,  Y10S118/90 ,  Y10S148/148 ,  Y10S438/931

Abstract: Silicon carbide crystals are obtained by sublimation in an atmosphere of an inert gas in a chamber the wall of which is of silicon carbide. A graphite cylinder 1 is lined with lumps of slicon carbide 2 and closed by a lump 3 of silicon carbide, and is arranged in a graphite cylinder 7 surrounded by a carbon furnace wall 17, through which an electric current is passed from electrodes 18. The inert gas, which may be an inert rare gas, such as argon, or hydrogen or carbon monoxide, is introduced through a pipe 22 and surrounds and fills the cylinder 1. The temperature in the furnace is maintained at around 2500 DEG C. On cooling single crystals are removed from the inner wall of the silicon carbide lining. Crystals having a n-type conductivity are obtained by introducing nitrogen, PCl3, PH3, AsCl3 or SbCl3, into the atmosphere of the furance, or Na3PO4 into the starting silicon carbide material; crystals having p-type conductivity are obtained by introducing AlCl3 or BCl3 into the furnace atmosphere, or Al2O3 into the starting material. Crystals having adjacent zones of different conductivity, e.g. p-n junctions, are obtained by adding impurities to the starting material and different impurities to the gas atmosphere, and causing the vapour pressures of the impurities to predominate alternately; or impurities may be added only to the gas atmosphere, which is changed for one containing different impurities after the crystals have grown for some time. Examples of the process are described.