APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20240079216A1

    公开(公告)日:2024-03-07

    申请号:US18462379

    申请日:2023-09-06

    Applicant: PSK INC.

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.

    APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20240087854A1

    公开(公告)日:2024-03-14

    申请号:US18462378

    申请日:2023-09-06

    Applicant: PSK INC.

    Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.

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