公开(公告)号：US06893893B2

公开(公告)日：2005-05-17

申请号：US10235100

申请日：2002-09-04

申请人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

发明人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L43/12

CPC分类号： H01L23/564 ,  H01L21/67069 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

摘要翻译： 一种用于防止多层磁性膜堆叠中的电短路的方法包括提供包括具有暴露表面的磁性材料层的膜堆叠。 保护层沉积在磁性层的暴露表面上。 保护层可以包括例如碳氟化合物或氢氟烃。 蚀刻薄膜叠层并且保护层保护暴露的表面免受在蚀刻薄膜叠层时产生的导电残留物。 该方法可以用于膜堆叠中以形成磁阻随机存取存储器（MRAM）装置。

公开(公告)号：US06692903B2

公开(公告)日：2004-02-17

申请号：US09737373

申请日：2000-12-13

申请人： Haojiang Chen ,  James S. Papanu ,  Mark Kawaguchi ,  Harald Herchen ,  Jeng H. Hwang ,  Guangxiang Jin ,  David Palagashvili

发明人： Haojiang Chen ,  James S. Papanu ,  Mark Kawaguchi ,  Harald Herchen ,  Jeng H. Hwang ,  Guangxiang Jin ,  David Palagashvili

IPC分类号： G03F736

CPC分类号： H01L21/02071 ,  G03F7/427 ,  H01L21/32136

摘要： A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

摘要翻译： 处理衬底30的方法包括将衬底30暴露于通电工艺气体以蚀刻衬底30上的特征67，并将衬底30暴露于通电的清洁气体以从衬底30去除蚀刻剂残留物70和/或残余抗蚀剂60 为了增强清洁过程，可以在清洁过程之前，之中或之后对衬底30进行处理，通过将衬底30暴露于包含卤素物质的通电处理气体中。

公开(公告)号：US06821907B2

公开(公告)日：2004-11-23

申请号：US10092456

申请日：2002-03-06

申请人： Jeng H. Hwang ,  Guangxiang Jin ,  Xiaoyi Chen

发明人： Jeng H. Hwang ,  Guangxiang Jin ,  Xiaoyi Chen

IPC分类号： H01L21461

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

摘要： A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.

摘要翻译： 描述了用于蚀刻磁存储单元堆栈的方法和装置。 更具体地，HCl用作蚀刻磁存储单元堆叠的主蚀刻剂气体。 HCl部分用于减少腐蚀和提高选择性。 另外，描述了使用无定形碳或烃基聚合物树脂作为硬掩模，以及用水冲洗，水蒸气等离子体处理或氨等离子体处理的蚀刻后钝化。 此外，在一个实施例中，布置大部分磁存储单元堆叠的扩散阻挡层在单独的处理室中被氢气和含氟气体蚀刻。

公开(公告)号：US06730561B2

公开(公告)日：2004-05-04

申请号：US09876282

申请日：2001-06-06

申请人： Jeng H. Hwang ,  Guangxiang Jin

发明人： Jeng H. Hwang ,  Guangxiang Jin

IPC分类号： H01L218242

CPC分类号： H01L28/91 ,  H01L21/32136 ,  H01L27/10852

摘要： A simple method of forming a cup capacitor is disclosed. The method typically involves only “dry” deposition and etching steps, allowing applicants' method to be performed in a single processing apparatus, if so desired. The method includes the following steps: a) providing a semiconductor structure including a dielectric layer overlying a semiconductor substrate, wherein a cup is present in the dielectric layer, the cup having an opening at an upper surface of the dielectric layer; b) depositing a conformal layer of a conductive material over the dielectric layer, including the sidewalls and bottom of the cup; c) depositing a layer of a sacrificial material over the conductive material, in an amount sufficient to fill the cup; d) removing sacrificial material present on an upper surface (field surface) of the conductive layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the sacrificial material relative to the conductive material; e) removing conductive material present on an upper surface (field surface) of the dielectric layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the conductive material relative to the sacrificial material remaining inside of the cup; and f) removing sacrificial layer material remaining inside of the cup by etching, using an etchant which selectively etches the sacrificial material inside of the cup relative to the conductive material inside of the cup.

摘要翻译： 公开了一种形成杯式电容器的简单方法。 该方法通常仅涉及“干”沉积和蚀刻步骤，如果需要，允许申请人的方法在单个处理设备中执行。 该方法包括以下步骤：a）提供包括覆盖在半导体衬底上的电介质层的半导体结构，其中杯存在于电介质层中，该杯在电介质层的上表面具有开口; b）在介电层上沉积导电材料的保形层，包括杯的侧壁和底部; c）以足以填充杯子的量在导电材料上沉积牺牲材料层; d）通过使用等离子体源气体去除牺牲材料相对于导电材料的等离子体源气体去除存在于导电层的上表面（场表面）上的牺牲材料，该牺牲材料通过等离子体蚀刻在杯子外部和邻近的位置; e）使用等离子体源气体来除去存在于电介质层的上表面（场表面）上的外部和邻近杯子的导电材料，该等离子体源气体相对于保留在杯内的牺牲材料选择性地蚀刻导电材料 ; 以及f）通过蚀刻去除使用蚀刻剂去除在杯内残留的牺牲层材料，所述蚀刻剂相对于所述杯内的导电材料选择性地蚀刻所述杯内的所述牺牲材料。

公开(公告)号：US06368517B1

公开(公告)日：2002-04-09

申请号：US09251651

申请日：1999-02-17

申请人： Jeng H. Hwang ,  Kang-Lie Chiang ,  Guangxiang Jin

发明人： Jeng H. Hwang ,  Kang-Lie Chiang ,  Guangxiang Jin

IPC分类号： B44C122

CPC分类号： H01L21/02071 ,  H01L21/31122 ,  H01L28/55 ,  H01L28/60

摘要： Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The surface of the dielectric material which supports the corrosion-forming etch residues is post-etch treated in order to remove the corrosion-forming etch residues. Post-etch treating of the surface of the dielectric material includes disposing the dielectric material in a vacuum chamber having microwave downstream treating gas plasma, or contacting the surface of the dielectric material with deionized water.

摘要翻译： 在蚀刻由电介质材料支撑的金属层之后，去除或钝化留在电介质材料表面上的腐蚀形成蚀刻残留物的方法。 支持腐蚀蚀刻残留物的电介质材料的表面进行后蚀刻处理以除去腐蚀形成蚀刻残留物。 电介质材料的表面的蚀刻后处理包括将介电材料设置在具有微波下游处理气体等离子体的真空室中，或者将电介质材料的表面与去离子水接触。

公开(公告)号：US06919168B2

公开(公告)日：2005-07-19

申请号：US10057674

申请日：2002-01-24

申请人： Jeng H. Hwang ,  Steve S. Y. Mak ,  True-Lon Lin ,  Chentsau Ying ,  John W. Schaller

发明人： Jeng H. Hwang ,  Steve S. Y. Mak ,  True-Lon Lin ,  Chentsau Ying ,  John W. Schaller

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  G03F7/00 ,  G03F7/36

CPC分类号： H01L28/60 ,  C23F4/00 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.

摘要翻译： 一种蚀刻设置在基板上的贵金属电极层的方法，以制造半导体器件，该半导体器件包括间隔等于或小于约0.35μm并且具有等于或大于约80°的贵金属形状的多个电极。 该方法包括将衬底加热到​​大于约150℃的温度，并且通过采用蚀刻剂气体的高密度电感耦合等离子体蚀刻贵金属电极层，所述等离子体包括选自氮，氧， 卤素（例如氯），氩气和选自BCl 3，HBr和SiCl 4+混合物的气体。 还提供了用于图案化高密度RAM电容器的掩模方法和蚀刻顺序。

公开(公告)号：US6037264A

公开(公告)日：2000-03-14

申请号：US371593

申请日：1999-08-10

申请人： Jeng H. Hwang

发明人： Jeng H. Hwang

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： A method of etching a platinum electrode layer disposed on a substrate. The method comprises providing a substrate supporting a platinum electrode layer, an insulation layer on the platinum electrode layer, and a resist layer on the insulation layer. A portion of the insulation layer is etched by employing a plasma of an etchant gas to break through and to remove the portion of the insulation layer from the platinum electrode layer to expose part of the platinum electrode layer. The exposed part of the platinum electrode layer is then etched by employing a plasma of an etchant gas comprising argon. The etched platinum electrode layer is subsequently overetched by employing a high density plasma of an etchant gas to remove redeposited veils from the etched platinum electrode layer. The etched platinum electrode layer is employed in a semiconductor device.

公开(公告)号：US06579796B2

公开(公告)日：2003-06-17

申请号：US10013605

申请日：2001-12-10

申请人： Chentsau Ying ,  Jeng H. Hwang ,  Luc Van Autryve

发明人： Chentsau Ying ,  Jeng H. Hwang ,  Luc Van Autryve

IPC分类号： H01L21302

CPC分类号： H01J37/32862 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/905

摘要： Disclosed herein is a method of etching platinum using a silicon carbide mask. The method comprises providing an etch stack including a patterned silicon carbide layer overlying a layer of platinum, then pattern etching the platinum layer using a plasma generated from a source gas comprising Cl2, BCl3, and a nonreactive, diluent gas. The silicon carbide mask can be deposited and patterned using standard industry techniques, and can be easily removed without damaging either the platinum or an underlying doped substrate material. The method provides a smooth platinum etch profile and an etch profile angle of about 75° to about 90°. Also disclosed herein are methods of forming semiconductor structures useful in the preparation of DRAM and FeRAM cells.

摘要翻译： 本文公开了使用碳化硅掩模蚀刻铂的方法。 该方法包括提供包括覆盖铂层的图案化碳化硅层的蚀刻堆叠，然后使用由包含Cl 2，BCl 3和非反应性稀释气体的源气体产生的等离子体来刻蚀铂层。 可以使用标准工业技术沉积和图案化碳化硅掩模，并且可以容易地去除碳化硅掩模，而不会损坏铂或下掺杂的衬底材料。 该方法提供平滑的铂蚀刻轮廓和约75°至约90°的蚀刻轮廓角。 本文还公开了形成用于制备DRAM和FeRAM单元的半导体结构的方法。

公开(公告)号：US06323132B1

公开(公告)日：2001-11-27

申请号：US09251826

申请日：1999-02-17

申请人： Jeng H. Hwang ,  Chentsau Ying ,  Kang-Lie Chiang ,  Steve S. Y. Mak

发明人： Jeng H. Hwang ,  Chentsau Ying ,  Kang-Lie Chiang ,  Steve S. Y. Mak

IPC分类号： H01L21302

CPC分类号： H01L28/60 ,  C23F4/00 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.

摘要翻译： 一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。 该方法包括将衬底加热到​​大于约150℃的温度，并且通过使用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体和选自以下的气体来蚀刻铂电极层： 惰性气体（例如氩气），BCl 3，HBr，SiCl 4及其混合物。 衬底可以在具有介电窗口的反应器室中加热，所述电介质窗口包括具有表面光洁度的沉积物接收表面，所述沉积物接收表面包括具有大于约的平均高度值的峰 - 谷粗糙度高度。

公开(公告)号：US06709609B2

公开(公告)日：2004-03-23

申请号：US09747667

申请日：2000-12-22

申请人： Jeng H. Hwang ,  Xiaoyi Chen

发明人： Jeng H. Hwang ,  Xiaoyi Chen

IPC分类号： C03C2568

CPC分类号： C23F4/00 ,  H01L21/32136

摘要： We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.

摘要翻译： 我们已经发现了减少在衬底预热期间溅射/蚀刻的材料的影响的方法。 该方法的一个实施方案涉及预热衬底，其包括在预热之后被图案蚀刻的含金属层。 该方法包括将衬底暴露于预热等离子体中，其在预热期间产生沉积物或残留物，其在所述含金属层的随后等离子体蚀刻期间比所述含金属层更容易蚀刻。