公开(公告)号：US08900374B2

公开(公告)日：2014-12-02

申请号：US12942446

申请日：2010-11-09

申请人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

发明人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

IPC分类号： B08B3/04 ,  H01L21/67

CPC分类号： H01L21/67051 ,  Y10S134/902

摘要： A substrate is moved below a substrate cleaning module in a direction extending from a leading edge to a trailing edge of the substrate cleaning module. A cleaning material is dispensed downward toward a top surface of the substrate along the leading edge of the substrate cleaning module. A rinsing material is dispensed downward toward the top surface of the substrate along the trailing edge of the substrate cleaning module to generate a rinsing meniscus. Vacuum suction is applied at a vacuum suction location along a bottom surface of the substrate cleaning module and parallel to the leading and trailing edges of the substrate cleaning module. The vacuum location is positioned between a dispense location of the cleaning material and a dispense location of the rinsing material. A plenum region located between the dispense location of the cleaning material and the vacuum location is vented.

摘要翻译： 衬底沿着从衬底清洁模块的前缘延伸到后缘的方向移动到衬底清洁模块下方。 清洁材料沿着衬底清洁模块的前缘朝向衬底的顶表面向下分配。 冲洗材料沿衬底清洁模块的后缘向下分配到衬底的顶表面，以产生漂洗弯液面。 真空抽吸沿着基板清洁模块的底表面在真空抽吸位置处并且平行于基板清洁模块的前缘和后缘施加。 真空位置位于清洁材料的分配位置和冲洗材料的分配位置之间。 位于清洁材料的分配位置和真空位置之间的集气室区域被排出。

公开(公告)号：US08757177B2

公开(公告)日：2014-06-24

申请号：US13670006

申请日：2012-11-06

申请人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

发明人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

IPC分类号： H01L21/673

CPC分类号： B08B3/041 ,  H01L21/02057 ,  H01L21/67051

摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

摘要翻译： 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

公开(公告)号：US20140083463A1

公开(公告)日：2014-03-27

申请号：US13624138

申请日：2012-09-21

申请人： John Valcore ,  Mark Kawaguchi ,  Cristian Paduraru

发明人： John Valcore ,  Mark Kawaguchi ,  Cristian Paduraru

IPC分类号： B08B5/04

CPC分类号： H01L21/67253

摘要： A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.

摘要翻译： 一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。 该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种，以及由处理系统从其中移出的液体。 该装置具有设置在其上的传感器部分。 传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号，并且由处理系统从其中除去的液体。 该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。 该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。

公开(公告)号：US20060289384A1

公开(公告)日：2006-12-28

申请号：US11467842

申请日：2006-08-28

申请人： Elizabeth Pavel ,  Mark Kawaguchi ,  James Papanu

发明人： Elizabeth Pavel ,  Mark Kawaguchi ,  James Papanu

IPC分类号： G01L21/30 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3342

摘要： Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate comprising a photoresist layer into a processing chamber; processing the photoresist layer using a multiple step plasma process; and monitoring the plasma for a hydrogen optical emission during the multiple step plasma process; wherein the multiple step plasma process includes removing a bulk of the photoresist layer using a bulk removal step; and switching to an overetch step in response to the monitored hydrogen optical emission.

摘要翻译： 本文提供了在执行光致抗蚀剂剥离和从衬底或衬底上的膜堆叠移除残余物时监测和检测光发射的方法。 在一个实施例中，提供了一种方法，其包括将包括光致抗蚀剂层的基板定位到处理室中; 使用多步骤等离子体处理来处理光致抗蚀剂层; 以及在所述多级等离子体处理期间监测所述等离子体的氢光发射; 其中所述多步骤等离子体处理包括使用块移除步骤去除大部分光致抗蚀剂层; 并且响应于所监视的氢光发射而切换到过蚀刻步骤。

公开(公告)号：US20130068261A1

公开(公告)日：2013-03-21

申请号：US13670006

申请日：2012-11-06

申请人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

发明人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

IPC分类号： B08B3/04

CPC分类号： B08B3/041 ,  H01L21/02057 ,  H01L21/67051

摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

摘要翻译： 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

公开(公告)号：US08317934B2

公开(公告)日：2012-11-27

申请号：US12465594

申请日：2009-05-13

申请人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

发明人： Arnold Kholodenko ,  Katrina Mikhaylichenko ,  Cheng-Yu (Sean) Lin ,  Mark Wilcoxson ,  Leon Ginzburg ,  Mark Kawaguchi

IPC分类号： B08B5/04 ,  B08B3/00 ,  B08B7/04

CPC分类号： B08B3/041 ,  H01L21/02057 ,  H01L21/67051

摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

摘要翻译： 对基材的表面进行清洁材料的第一次施加。 清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。 冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。 洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。 清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。 然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

公开(公告)号：US08101025B2

公开(公告)日：2012-01-24

申请号：US11363833

申请日：2006-02-27

申请人： Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

发明人： Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

IPC分类号： B08B7/04 ,  B08B7/00

CPC分类号： B08B3/08 ,  B08B7/0035 ,  C23F4/00 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/32138 ,  H01L28/60 ,  Y10S438/906

摘要： A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

摘要翻译： 本发明提供一种控制基板腐蚀的方法。 在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。 金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。 金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。 氢基等离子体可以包含氢（H 2），并且还可以包含氮（N 2）和水（H 2 O）蒸气中的至少一种。 氢基等离子体还可以包含惰性气体，例如氩（Ar）。

公开(公告)号：US20110048467A1

公开(公告)日：2011-03-03

申请号：US12942446

申请日：2010-11-09

申请人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

发明人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  Y10S134/902

摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

摘要翻译： 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：US07849554B2

公开(公告)日：2010-12-14

申请号：US12431731

申请日：2009-04-28

申请人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

发明人： Cheng-Yu (Sean) Lin ,  Mark Kawaguchi ,  Mark Wilcoxson ,  Russell Martin ,  Leon Ginzburg

IPC分类号： A47L9/08

CPC分类号： H01L21/67051 ,  Y10S134/902

摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.

摘要翻译： 上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。 顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。 下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。 底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。 上下处理头可以分别包括顶侧和底部模块的多个实例。

公开(公告)号：US20070287244A1

公开(公告)日：2007-12-13

申请号：US11739099

申请日：2007-04-24

申请人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

发明人： Meihua Shen ,  Yonah Cho ,  Mark Kawaguchi ,  Faran Nouri ,  Diana Ma

IPC分类号： H01L21/8236

CPC分类号： H01L21/823814 ,  H01L21/823864

摘要： A method for fabricating a semiconductor device with adjacent PMOS and NMOS devices on a substrate includes forming a PMOS gate electrode with a PMOS hardmask on a semiconductor substrate with a PMOS gate dielectric layer in between, forming an NMOS gate electrode with an NMOS hardmask on a semiconductor substrate with an NMOS gate dielectric layer in between, forming an oxide liner over a portion of the PMOS gate electrode and over a portion of the NMOS gate electrode, forming a lightly doped N-Halo implant, depositing a nitride layer over the oxide liner, depositing photoresist on the semiconductor substrate in a pattern that covers the NMOS device, etching the nitride layer from the PMOS device, wherein the etching nitride layer leaves a portion of the nitride layer on the oxide liner, etching semiconductor substrate to form a Si recess, and depositing SiGe into the Si recesses, wherein the SiGe and the nitride layer enclose the oxide liner. The method can also include implanting in the semiconductor substrate a source and drain region for the PMOS.

摘要翻译： 一种用于在衬底上制造具有相邻PMOS和NMOS器件的半导体器件的方法包括在半导体衬底上形成具有PMOS硬掩模的PMOS栅电极，其间具有PMOS栅极介电层，在NMOS栅极上形成NMOS栅极 半导体衬底，其间具有NMOS栅极介电层，在PMOS栅电极的一部分上方和NMOS栅电极的一部分之上形成氧化物衬垫，形成轻掺杂的N-Halo注入，在氧化物衬垫上沉积氮化物层 以覆盖所述NMOS器件的图案沉积在所述半导体衬底上的光致抗蚀剂，从所述PMOS器件蚀刻所述氮化物层，其中所述蚀刻氮化物层离开所述氧化物衬底上的所述氮化物层的一部分，蚀刻半导体衬底以形成Si凹槽 并且将SiGe沉积到Si凹部中，其中SiGe和氮化物层包围氧化物衬垫。 该方法还可以包括在半导体衬底中注入用于PMOS的源极和漏极区域。