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17 条记录 (耗时 0.037 秒)

    Method of preventing short circuits in magnetic film stacks
    1.
    发明授权
    Method of preventing short circuits in magnetic film stacks 失效
    防止磁性薄膜堆叠短路的方法

    公开(公告)号：US06893893B2

    公开(公告)日：2005-05-17

    申请号：US10235100

    申请日：2002-09-04

    申请人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

    发明人： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

    IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L43/12

    CPC分类号： H01L23/564 ,  H01L21/67069 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

    摘要翻译： 一种用于防止多层磁性膜堆叠中的电短路的方法包括提供包括具有暴露表面的磁性材料层的膜堆叠。 保护层沉积在磁性层的暴露表面上。 保护层可以包括例如碳氟化合物或氢氟烃。 蚀刻薄膜叠层并且保护层保护暴露的表面免受在蚀刻薄膜叠层时产生的导电残留物。 该方法可以用于膜堆叠中以形成磁阻随机存取存储器（MRAM）装置。

    Etching methods for a magnetic memory cell stack
    3.
    发明授权
    Etching methods for a magnetic memory cell stack 失效
    磁记忆体堆叠的蚀刻方法

    公开(公告)号：US06821907B2

    公开(公告)日：2004-11-23

    申请号：US10092456

    申请日：2002-03-06

    申请人： Jeng H. Hwang ,  Guangxiang Jin ,  Xiaoyi Chen

    发明人： Jeng H. Hwang ,  Guangxiang Jin ,  Xiaoyi Chen

    IPC分类号： H01L21461

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

    摘要： A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.

    摘要翻译： 描述了用于蚀刻磁存储单元堆栈的方法和装置。 更具体地，HCl用作蚀刻磁存储单元堆叠的主蚀刻剂气体。 HCl部分用于减少腐蚀和提高选择性。 另外，描述了使用无定形碳或烃基聚合物树脂作为硬掩模，以及用水冲洗，水蒸气等离子体处理或氨等离子体处理的蚀刻后钝化。 此外，在一个实施例中，布置大部分磁存储单元堆叠的扩散阻挡层在单独的处理室中被氢气和含氟气体蚀刻。

    Method of forming a cup capacitor
    4.
    发明授权
    Method of forming a cup capacitor 失效
    形成杯式电容器的方法

    公开(公告)号：US06730561B2

    公开(公告)日：2004-05-04

    申请号：US09876282

    申请日：2001-06-06

    申请人： Jeng H. Hwang ,  Guangxiang Jin

    发明人： Jeng H. Hwang ,  Guangxiang Jin

    IPC分类号： H01L218242

    CPC分类号： H01L28/91 ,  H01L21/32136 ,  H01L27/10852

    摘要： A simple method of forming a cup capacitor is disclosed. The method typically involves only “dry” deposition and etching steps, allowing applicants' method to be performed in a single processing apparatus, if so desired. The method includes the following steps: a) providing a semiconductor structure including a dielectric layer overlying a semiconductor substrate, wherein a cup is present in the dielectric layer, the cup having an opening at an upper surface of the dielectric layer; b) depositing a conformal layer of a conductive material over the dielectric layer, including the sidewalls and bottom of the cup; c) depositing a layer of a sacrificial material over the conductive material, in an amount sufficient to fill the cup; d) removing sacrificial material present on an upper surface (field surface) of the conductive layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the sacrificial material relative to the conductive material; e) removing conductive material present on an upper surface (field surface) of the dielectric layer outside of and adjacent to the cup by plasma etching, using a plasma source gas which selectively etches the conductive material relative to the sacrificial material remaining inside of the cup; and f) removing sacrificial layer material remaining inside of the cup by etching, using an etchant which selectively etches the sacrificial material inside of the cup relative to the conductive material inside of the cup.

    摘要翻译： 公开了一种形成杯式电容器的简单方法。 该方法通常仅涉及“干”沉积和蚀刻步骤，如果需要，允许申请人的方法在单个处理设备中执行。 该方法包括以下步骤：a）提供包括覆盖在半导体衬底上的电介质层的半导体结构，其中杯存在于电介质层中，该杯在电介质层的上表面具有开口; b）在介电层上沉积导电材料的保形层，包括杯的侧壁和底部; c）以足以填充杯子的量在导电材料上沉积牺牲材料层; d）通过使用等离子体源气体去除牺牲材料相对于导电材料的等离子体源气体去除存在于导电层的上表面（场表面）上的牺牲材料，该牺牲材料通过等离子体蚀刻在杯子外部和邻近的位置; e）使用等离子体源气体来除去存在于电介质层的上表面（场表面）上的外部和邻近杯子的导电材料，该等离子体源气体相对于保留在杯内的牺牲材料选择性地蚀刻导电材料 ; 以及f）通过蚀刻去除使用蚀刻剂去除在杯内残留的牺牲层材料，所述蚀刻剂相对于所述杯内的导电材料选择性地蚀刻所述杯内的所述牺牲材料。

    Method for preventing corrosion of a dielectric material
    5.
    发明授权
    Method for preventing corrosion of a dielectric material 失效
    防止电介质材料腐蚀的方法

    公开(公告)号：US06368517B1

    公开(公告)日：2002-04-09

    申请号：US09251651

    申请日：1999-02-17

    申请人： Jeng H. Hwang ,  Kang-Lie Chiang ,  Guangxiang Jin

    发明人： Jeng H. Hwang ,  Kang-Lie Chiang ,  Guangxiang Jin

    IPC分类号： B44C122

    CPC分类号： H01L21/02071 ,  H01L21/31122 ,  H01L28/55 ,  H01L28/60

    摘要： Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The surface of the dielectric material which supports the corrosion-forming etch residues is post-etch treated in order to remove the corrosion-forming etch residues. Post-etch treating of the surface of the dielectric material includes disposing the dielectric material in a vacuum chamber having microwave downstream treating gas plasma, or contacting the surface of the dielectric material with deionized water.

    摘要翻译： 在蚀刻由电介质材料支撑的金属层之后，去除或钝化留在电介质材料表面上的腐蚀形成蚀刻残留物的方法。 支持腐蚀蚀刻残留物的电介质材料的表面进行后蚀刻处理以除去腐蚀形成蚀刻残留物。 电介质材料的表面的蚀刻后处理包括将介电材料设置在具有微波下游处理气体等离子体的真空室中，或者将电介质材料的表面与去离子水接触。

    Etch methods to form anisotropic features for high aspect ratio applications
    7.
    发明授权
    Etch methods to form anisotropic features for high aspect ratio applications 失效
    蚀刻方法来形成高纵横比应用的各向异性特征

    公开(公告)号：US07368394B2

    公开(公告)日：2008-05-06

    申请号：US11363834

    申请日：2006-02-27

    申请人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    发明人： Meihua Shen ,  Uwe Leucke ,  Guangxiang Jin ,  Xikun Wang ,  Wei Liu ,  Scott Williams

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/32137 ,  H01L21/76814

    摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.

    摘要翻译： 在本发明中提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。 本文描述的方法通过侧壁钝化管理方案有利地促进具有高纵横比的特征的轮廓和尺寸控制。 在一个实施例中，通过在蚀刻层的侧壁和/或底部选择性地形成氧化钝化层来管理侧壁钝化。 在另一个实施例中，通过周期性地清除覆盖层再沉积层以在其上保持均匀且均匀的钝化层来管理侧壁钝化。 均匀和均匀的钝化允许以在衬底上的高和低特征密度区域中具有临界尺寸的期望深度和垂直分布的方式来逐渐蚀刻具有高纵横比的特征，而不产生缺陷和/或过蚀刻下面 层。

    Method of etching metals with high selectivity to hafnium-based dielectric materials
    8.
    发明申请
    Method of etching metals with high selectivity to hafnium-based dielectric materials 审中-公开
    以铪基电介质材料高选择性蚀刻金属的方法

    公开(公告)号：US20060060565A9

    公开(公告)日：2006-03-23

    申请号：US10418994

    申请日：2003-04-17

    申请人： Padmapani Nallan ,  Ajay Kumar ,  Guangxiang Jin

    发明人： Padmapani Nallan ,  Ajay Kumar ,  Guangxiang Jin

    IPC分类号： C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01L21/32137

    摘要： A method of plasma etching a metal layer (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) or a metal-containing layer (e.g., tantalum silicon nitride (TaSiN), titanium nitride (TiN), tungsten nitride (WN), and the like) formed on a hafnium-based dielectric material is disclosed. The metal/metal-containing layer is etched using a gas mixture comprising a halogen-containing gas and a fluorine-containing gas. The fluorine within the gas mixture provides a high etch selectivity for the hafnium-based dielectric material.

    摘要翻译： 金属层（例如钛（Ti），钽（Ta），钨（W）等）等等离子体蚀刻或金属含有层（例如，钽氮化硅（TaSiN），氮化钛 ），氮化钨（WN）等）形成在铪基电介质材料上。 使用包含含卤素气体和含氟气体的气体混合物来蚀刻含金属/含金属层。 气体混合物中的氟提供了对铪基电介质材料的高蚀刻选择性。