公开(公告)号：US11795573B2

公开(公告)日：2023-10-24

申请号：US17359949

申请日：2021-06-28

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC: C30B25/16 ,  C30B25/02 ,  H01L21/02 ,  C23C16/30 ,  C30B29/40

CPC classification number: C30B25/02 ,  C23C16/303 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

公开(公告)号：US11713517B2

公开(公告)日：2023-08-01

申请号：US17023720

申请日：2020-09-17

Applicant: Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC: C30B29/40 ,  C30B33/08 ,  C30B25/02

CPC classification number: C30B29/406 ,  C30B33/08 ,  C30B25/02

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US11624128B2

公开(公告)日：2023-04-11

申请号：US17340401

申请日：2021-06-07

Applicant: Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Tomoaki Sumi ,  Junichi Takino ,  Yoshio Okayama

IPC: C30B29/38 ,  C30B25/02 ,  C01B21/06 ,  C30B29/40 ,  H01L21/02

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm−3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

公开(公告)号：US11155931B2

公开(公告)日：2021-10-26

申请号：US16776647

申请日：2020-01-30

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC: C30B25/16 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.

公开(公告)号：US11713516B2

公开(公告)日：2023-08-01

申请号：US17340416

申请日：2021-06-07

Applicant: Panasonic Corporation

Inventor： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Tomoaki Sumi ,  Junichi Takino ,  Yoshio Okayama

IPC: C30B29/38 ,  C30B29/40 ,  C30B25/02 ,  H01L21/02 ,  C01B21/06

CPC classification number: C30B29/38 ,  C30B25/02 ,  C01B21/0602 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02576 ,  H01L21/02645

Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.