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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20140225161A1

    公开(公告)日：2014-08-14

    申请号：US14254520

    申请日：2014-04-16

    Applicant: PANASONIC CORPORATION

    Inventor： Hideyuki OKITA ,  Yasuhiro UEMOTO ,  Masahiro HIKITA ,  Akihiko NISHIO ,  Hidenori TAKEDA ,  Takahiro SATO

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/78 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

    Abstract: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.

    Abstract translation: 半导体器件包括：第一氮化物半导体层; 在第一氮化物半导体层上方的第二氮化物半导体层，其带隙大于第一氮化物半导体层的带隙; 在第二氮化物半导体层上方的p型氮化物半导体层; 位于第二氮化物半导体层上方的n型二氮化硅半导体层，分别位于p型氮化物半导体层的两侧; 以及在所述两个第三氮化物半导体层中的一个上方的第一欧姆电极和位于所述两个第三氮化物半导体层中另一个之上的第二欧姆电极; 以及p型氮化物半导体层上方的栅电极。 第二氮化物半导体层在p型氮化物半导体层和两个第三氮化物半导体层都不在其上的区域中包括与p型氮化物半导体层中的p型杂质相同的p型杂质的表面层。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20140097468A1

    公开(公告)日：2014-04-10

    申请号：US14104710

    申请日：2013-12-12

    Applicant: PANASONIC CORPORATION

    Inventor： Hideyuki OKITA ,  Yasuhiro UEMOTO ,  Masahiro HIKITA ,  Hidenori TAKEDA ,  Takahiro SATO ,  Akihiko NISHIO

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/7789 ,  H01L29/0688 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/7787

    Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer (1) located over the substrate; a second nitride semiconductor layer (2) located over the first nitride semiconductor layer (1), having a larger band gap than the first nitride semiconductor layer (1), and having a recess (11) penetrating into the first nitride semiconductor layer (1); and a third nitride semiconductor layer (12) continuously covering the second nitride semiconductor layer (2) and the recess (11), and having a larger band gap than the first nitride semiconductor layer (1); a gate electrode (5) located above a portion of the third nitride semiconductor layer (12) over the recess (11); and a first ohmic electrode (4a) and a second ohmic electrode (4b) located on opposite sides of the gate electrode (5).

    Abstract translation: 氮化物半导体器件包括：衬底; 位于所述基板上方的第一氮化物半导体层（1） 位于所述第一氮化物半导体层（1）上方的第二氮化物半导体层（2），具有比所述第一氮化物半导体层（1）更大的带隙，并且具有贯穿所述第一氮化物半导体层（1）的凹部（11） ）; 以及连续地覆盖所述第二氮化物半导体层（2）和所述凹部（11）并且具有比所述第一氮化物半导体层（1）更大的带隙的第三氮化物半导体层（12）。 位于所述凹部（11）上方的所述第三氮化物半导体层（12）的一部分上方的栅电极（5）。 以及位于栅电极（5）的相对侧上的第一欧姆电极（4a）和第二欧姆电极（4b）。

    DISC DEVICE
    6.
    发明申请
    DISC DEVICE 有权
    DISC设备

    公开(公告)号：US20130326548A1

    公开(公告)日：2013-12-05

    申请号：US13903306

    申请日：2013-05-28

    Applicant: PANASONIC CORPORATION

    Inventor： Yasue CHIHARA ,  Takuto YAMAZAKI ,  Tatsuro NISHI ,  Hirokuni HAGITA ,  Takahiro SATO ,  Masanori OHNISHI

    IPC: G11B17/053

    CPC classification number: G11B17/053 ,  G11B17/225 ,  G11B23/0323

    Abstract: The disc device supplies a disc to each of the plurality of disc drives. The disc device includes a carrier which retains a plurality of discs being stacked in such a stacked state, which separates one disc from the retained plurality of discs above a tray ejected from an arbitrary one of the disc drives, and which places the separated disc on the tray. The carrier includes a plurality of claw portions holding the inner circumferential portion of the bottommost disc out of the plurality of discs, and a disc press pressing the topmost disc out of the plurality of discs so as to be in parallel to the disc placing face of the tray.

    Abstract translation: 盘装置将光盘提供给多个盘驱动器中的每一个。 光盘装置包括一个托盘，其保持多个盘堆叠成堆叠状态，该多个光盘将盘从与从任意一个盘驱动器弹出的托盘上的保留的多个盘分离，并将分离的盘放置在 托盘。 载体包括多个爪部，其保持多个盘中的最下盘的内圆周部分，并且盘压从多个盘中压出最上面的盘，以平行于盘的放置面 托盘。

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