公开(公告)号：US20160322342A1

公开(公告)日：2016-11-03

申请号：US15108783

申请日：2015-01-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNICHI KIMURA ,  MASAHISA NAKAGUCHI ,  FUMITO ITOU ,  NORIMITSU HOZUMI

IPC: H01L25/18 ,  H01L23/31 ,  H01L23/14 ,  H01L23/00 ,  H01L23/50 ,  H01L23/495

CPC classification number: H01L25/18 ,  H01L23/142 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49534 ,  H01L23/49551 ,  H01L23/49558 ,  H01L23/49562 ,  H01L23/49572 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/37144 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A semiconductor device includes a substrate made of metal, a first metal wiring disposed above the substrate, a first semiconductor element and a second semiconductor element disposed above the first metal wiring, and a second metal wiring disposed above the first semiconductor element and the second semiconductor element. Furthermore, the semiconductor device includes a plurality of projections disposed in at least one of a space between each of the first semiconductor element and the second semiconductor element, and the first metal wiring, and a space between each of the first semiconductor element and the second semiconductor element, and the second metal wiring.

Abstract translation: 半导体器件包括由金属制成的衬底，设置在衬底上的第一金属布线，设置在第一金属布线上方的第一半导体元件和第二半导体元件，以及设置在第一半导体元件和第二半导体之上的第二金属布线 元件。 此外，半导体器件包括设置在第一半导体元件和第二半导体元件中的每一个之间的空间中的至少一个以及第一金属布线中的多个突起，以及第一半导体元件和第二半导体元件 半导体元件和第二金属布线。