Abstract:
A semiconductor device includes a substrate made of metal, a first metal wiring disposed above the substrate, a first semiconductor element and a second semiconductor element disposed above the first metal wiring, and a second metal wiring disposed above the first semiconductor element and the second semiconductor element. Furthermore, the semiconductor device includes a plurality of projections disposed in at least one of a space between each of the first semiconductor element and the second semiconductor element, and the first metal wiring, and a space between each of the first semiconductor element and the second semiconductor element, and the second metal wiring.
Abstract:
In an electronic device, A heat spreader is adhered to a surface of the substrate on a side opposite to the lower surface of the substrate (hereinafter referred to as “upper surface”) by an adhesive sheet. The heat spreader supports a power transistor cooperatively with the substrate. The power transistor which is an electrical element and the heat spreader are adhered to each other by an adhesive sheet on an adhering surface on a side opposite to an adhering surface where the heat spreader is adhered to the substrate. A bus bar and the power transistor are adhered to each other by an adhesive sheet on an adhering surface on a side opposite to an adhering surface where the power transistor is adhered to the heat spreader. The thermistor is connected to a lead which is a conductive line, and is disposed on an upper surface side of substrate.