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公开(公告)号:US20210118941A1
公开(公告)日:2021-04-22
申请号:US17121828
申请日:2020-12-15
Inventor: Katsuya NOZAWA
IPC: H01L27/148 , G06T7/73 , H01L27/142 , H04N5/235 , H04N5/341 , H04N5/349 , H04N5/225
Abstract: An imaging system includes an imaging optical system, an imaging device, an actuator, and control circuitry. The actuator changes a relative position of a plurality of pixel cells and an image of a subject. The pixel cells include a photoelectric converter and a charge accumulation region. The control circuitry sets the relative position to a first position, and a first signal charge obtained at the photoelectric converter during a first exposure is accumulated in the charge accumulation region. The relative position is set to a second position different from the first position, and a second signal charge obtained at the photoelectric converter during a second exposure time that is different from the first exposure time is accumulated in the charge accumulation region in addition to the first signal charge.
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公开(公告)号:US20240213279A1
公开(公告)日:2024-06-27
申请号:US18598856
申请日:2024-03-07
Inventor: Yuuko TOMEKAWA , Katsuya NOZAWA
IPC: H01L27/146 , H10K39/32
CPC classification number: H01L27/14605 , H01L27/14636 , H10K39/32
Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.
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公开(公告)号:US20200227483A1
公开(公告)日:2020-07-16
申请号:US16831231
申请日:2020-03-26
Inventor: Katsuya NOZAWA
IPC: H01L27/30 , H01L27/146 , H01L31/10 , H01L51/00 , H01L51/42
Abstract: An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.
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公开(公告)号:US20210265583A1
公开(公告)日:2021-08-26
申请号:US17313563
申请日:2021-05-06
Inventor: Masaya HIRADE , Manabu NAKATA , Katsuya NOZAWA , Yasunori INOUE
Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.
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公开(公告)号:US20200373453A1
公开(公告)日:2020-11-26
申请号:US16987525
申请日:2020-08-07
Inventor: Katsuya NOZAWA
IPC: H01L31/107 , H01L51/42 , H01L31/02 , H01L31/0352
Abstract: A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.
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公开(公告)号:US20240219236A1
公开(公告)日:2024-07-04
申请号:US18550866
申请日:2022-03-23
Inventor: Katsuya NOZAWA
CPC classification number: G01J3/44 , G01N21/65 , G01J2003/4424
Abstract: A Raman spectroscopy device includes: an irradiator that irradiates a sample with first excitation light having a first line width and second excitation light having a line width broader than the first line width; a spectroscopy measurer that, when first measurement light emitted from the sample when the sample is irradiated with the first excitation light and second measurement light emitted from the sample when the sample is irradiated with the second excitation light are incident, performs spectroscopy measurement on the first measurement light and the second measurement light; and a first selective optical system that has a first transmission band and a first stop band, and filters the first measurement light and the second measurement light incident on the spectroscopy measurer. The first excitation light and the second excitation light each have a main component in the first stop band, and the second excitation light has substantially no component in the first transmission band.
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公开(公告)号:US20210266481A1
公开(公告)日:2021-08-26
申请号:US17243170
申请日:2021-04-28
Inventor: Katsuya NOZAWA , Yasuo MIYAKE
IPC: H04N5/374 , H04N5/3745 , H04N5/355 , G01S17/36 , G01S17/894 , H01L27/144 , H01L27/146 , H04N5/225 , H04N5/351 , H04N5/369 , H04N5/378
Abstract: An imaging system includes a first illuminator that emits light whose intensity varies with time; and a first imaging device that comprises a first imaging cell; and a first bias control line. The first imaging cell includes a first electrode, a second electrode electrically connected to the first bias control line, and a photoelectric conversion layer sandwiched between the first electrode and the second electrode. During a first period from a reset of the first imaging cell until a readout of signal charge accumulated in the first imaging cell, the first bias control line supplies to the second electrode a first bias control signal. The first bias control signal is synchronized with the intensity of the light varying with time.
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