公开(公告)号：US10312339B2

公开(公告)日：2019-06-04

申请号：US15728141

申请日：2017-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US09818835B2

公开(公告)日：2017-11-14

申请号：US15234775

申请日：2016-08-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US09680053B2

公开(公告)日：2017-06-13

申请号：US14934244

申请日：2015-11-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki Kuroda ,  Manabu Yanagihara ,  Shinichi Oki

IPC: H01L33/06 ,  H01L33/00 ,  H01L29/778 ,  H01L33/32 ,  H01L29/20 ,  H01L25/16 ,  H01L27/15 ,  H01L33/18 ,  H01L29/872 ,  H01L33/36

CPC classification number: H01L33/06 ,  H01L25/167 ,  H01L27/15 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/0008 ,  H01L33/0025 ,  H01L33/0033 ,  H01L33/0041 ,  H01L33/18 ,  H01L33/32 ,  H01L33/36 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor.