公开(公告)号：US20160049347A1

公开(公告)日：2016-02-18

申请号：US14925608

申请日：2015-10-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NOBORU NEGORO ,  NAOHIRO TSURUMI ,  DAISUKE SHIBATA

IPC: H01L23/31 ,  H01L29/872 ,  H01L29/47 ,  H01L23/29 ,  H01L29/51 ,  H01L21/02 ,  H01L29/205 ,  H01L21/283 ,  H01L21/56 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L23/3171 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/283 ,  H01L21/563 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L29/0638 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor layer made of nitride semiconductor, an ohmic electrode and a schottky electrode both formed on the semiconductor layer, a first insulating film containing a small amount of hydrogen per unit volume for covering the semiconductor device on a top face defined between the ohmic electrode and the schottky electrode and also covering the schottky electrode, and a second insulating film formed on the first insulating film and containing a greater amount of hydrogen per unit volume than the first insulating film.

Abstract translation: 半导体器件包括由氮化物半导体制成的半导体层，均匀地形成在半导体层上的欧姆电极和肖特基电极，每单位体积含有少量氢的第一绝缘膜，用于在半导体器件的顶面上覆盖半导体器件， 欧姆电极和肖特基电极，并且还覆盖肖特基电极，以及形成在第一绝缘膜上并且每单位体积含有比第一绝缘膜更大量的氢的第二绝缘膜。

公开(公告)号：US20160218708A1

公开(公告)日：2016-07-28

申请号：US15089430

申请日：2016-04-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NOBORU NEGORO

IPC: H03K17/687 ,  H01L27/06 ,  H01L29/778 ,  H01L29/872 ,  H01L29/20 ,  H01L29/205

CPC classification number: H03K17/687 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/66128 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861 ,  H01L29/872 ,  H03K17/04106 ,  H03K17/063 ,  H03K17/691

Abstract: A gate drive apparatus with an improved gate drive capability to control a switching device includes a signal transmitter, a signal receiver, and an electromagnetic resonance coupler. The signal transmitter includes a gate control signal generator, an oscillator circuit, and a mixer circuit. The signal receiver includes a positive voltage outputting rectifier circuit, a negative voltage outputting rectifier circuit, and a pull-down resistor. The positive voltage outputting rectifier circuit has a positive voltage outputting diode, a first inductor, and a first capacitor. The negative voltage outputting rectifier circuit has a negative voltage outputting diode, a second inductor, and a second capacitor. In the signal receiver, the diode of each rectifier circuit has an anode electrode made of a metal having a low work function. This configuration improves an output voltage amplitude of the gate drive apparatus.

Abstract translation: 具有改进的用于控制开关装置的栅极驱动能力的栅极驱动装置包括信号发射器，信号接收器和电磁谐振耦合器。 信号发射器包括门控制信号发生器，振荡器电路和混频器电路。 信号接收机包括正电压输出整流电路，负电压输出整流电路和下拉电阻。 正电压输出整流电路具有正电压输出二极管，第一电感器和第一电容器。 负电压输出整流电路具有负电压输出二极管，第二电感器和第二电容器。 在信号接收器中，每个整流电路的二极管具有由具有低功函数的金属制成的阳极电极。 该配置改善了栅极驱动装置的输出电压幅度。

公开(公告)号：US20150303292A1

公开(公告)日：2015-10-22

申请号：US14788791

申请日：2015-07-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SHIBATA ,  NOBORU NEGORO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/205 ,  H01L29/10 ,  H01L29/872

CPC classification number: H01L29/7787 ,  H01L29/0684 ,  H01L29/1029 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/872

Abstract: A nitride semiconductor device includes: a substrate; a buffer layer formed on the substrate; a laminated body formed by two or more cycles of semiconductor layers each including a first nitride semiconductor layer, and a second nitride semiconductor layer having a larger band gap than a band gap of the first nitride semiconductor layer, the first and second nitride semiconductor layers being laminated in this order on the buffer layer; a first electrode; and a second electrode. A channel layer is formed in each of the semiconductor layers at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer. A carrier concentration of the channel layer in the uppermost semiconductor layer is lower than a carrier concentration of each of the channel layers of the other semiconductor layers.

Abstract translation: 氮化物半导体器件包括：衬底; 形成在所述基板上的缓冲层; 通过两个或更多个半导体层的循环形成的层叠体，每个半导体层包括第一氮化物半导体层和具有比第一氮化物半导体层的带隙大的带隙的第二氮化物半导体层，第一和第二氮化物半导体层为 按顺序层叠在缓冲层上; 第一电极; 和第二电极。 在第一氮化物半导体层和第二氮化物半导体层之间的界面处，在每个半导体层中形成沟道层。 最上层半导体层中的沟道层的载流子浓度低于其它半导体层的沟道层的载流子浓度。