公开(公告)号：US20150194483A1

公开(公告)日：2015-07-09

申请号：US14663140

申请日：2015-03-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： RYO KAJITANI ,  TETSUZO UEDA ,  YOSHIHARU ANDA ,  NAOHIRO TSURUMI ,  SATOSHI NAKAZAWA

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/40 ,  H01L29/51 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/0611 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/78

Abstract: An object is to achieve an increase in gain by reducing a current collapse, and reducing Cgd and Rg. A semiconductor device according to the present invention includes a substrate; a first semiconductor layer disposed on the substrate and made of a Group III nitride semiconductor; a second semiconductor layer disposed on the first semiconductor layer and made of a Group III nitride semiconductor; a gate electrode, a source electrode, and a drain electrode disposed on the second semiconductor layer; a first field plate electrode disposed on the second semiconductor layer; and a second field plate electrode disposed on the first field plate electrode, in which the first field plate electrode and the second field plate electrode are disposed between the gate electrode and the drain electrode.

Abstract translation: 目的是通过减少电流崩溃来实现增益的增加，并减少Cgd和Rg。 根据本发明的半导体器件包括：衬底; 设置在所述基板上并由III族氮化物半导体构成的第一半导体层; 设置在第一半导体层上并由III族氮化物半导体构成的第二半导体层; 设置在所述第二半导体层上的栅电极，源电极和漏电极; 设置在所述第二半导体层上的第一场板电极; 以及设置在第一场极板电极上的第二场极板电极，其中第一场极板电极和第二场极板电极设置在栅电极和漏电极之间。

公开(公告)号：US20160049347A1

公开(公告)日：2016-02-18

申请号：US14925608

申请日：2015-10-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NOBORU NEGORO ,  NAOHIRO TSURUMI ,  DAISUKE SHIBATA

IPC: H01L23/31 ,  H01L29/872 ,  H01L29/47 ,  H01L23/29 ,  H01L29/51 ,  H01L21/02 ,  H01L29/205 ,  H01L21/283 ,  H01L21/56 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L23/3171 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/283 ,  H01L21/563 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L29/0638 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor layer made of nitride semiconductor, an ohmic electrode and a schottky electrode both formed on the semiconductor layer, a first insulating film containing a small amount of hydrogen per unit volume for covering the semiconductor device on a top face defined between the ohmic electrode and the schottky electrode and also covering the schottky electrode, and a second insulating film formed on the first insulating film and containing a greater amount of hydrogen per unit volume than the first insulating film.

Abstract translation: 半导体器件包括由氮化物半导体制成的半导体层，均匀地形成在半导体层上的欧姆电极和肖特基电极，每单位体积含有少量氢的第一绝缘膜，用于在半导体器件的顶面上覆盖半导体器件， 欧姆电极和肖特基电极，并且还覆盖肖特基电极，以及形成在第一绝缘膜上并且每单位体积含有比第一绝缘膜更大量的氢的第二绝缘膜。