Method for producing halide
    4.
    发明授权

    公开(公告)号:US12139414B2

    公开(公告)日:2024-11-12

    申请号:US17323925

    申请日:2021-05-18

    Abstract: A production method for producing a halide includes heat-treating, in an inert gas atmosphere, a mixed material in which LiX, YZ3, and at least one of LiX′ or YZ′3 are mixed, where X is an element selected from the group consisting of Cl, Br, and I; Z is an element selected from the group consisting of Cl, Br, and I and different from X; X′ is an element selected from the group consisting of Cl, Br, and I and different from either X or Z; and Z′ is an element selected from the group consisting of Cl, Br, and I and different from either X or Z. In the heat-treatment, the mixed material is heat-treated at higher than or equal to 200° C. and lower than or equal to 650° C.

    INFRARED DETECTING DEVICE
    6.
    发明申请
    INFRARED DETECTING DEVICE 审中-公开
    红外检测装置

    公开(公告)号:US20150292949A1

    公开(公告)日:2015-10-15

    申请号:US14646835

    申请日:2013-11-01

    CPC classification number: G01J5/023 G01J5/024 G01J5/046 G01J5/34 H01L37/02

    Abstract: An infrared detecting device includes a substrate and a thermal photo detecting element. The substrate includes a concave portion, and a frame portion positioned on the periphery of the concave portion. The thermal photo detecting element includes leg portions and a detecting portion. The leg portions are connected on the frame portion so that the detecting portion is positioned above the concave portion. The thermal photo detecting element includes a first electrode layer disposed on the substrate, a detecting layer disposed on the first electrode layer, and a second electrode layer disposed on the detecting layer. The linear thermal expansion coefficient of the first electrode layer is larger than the linear thermal expansion coefficient of the substrate. The linear thermal expansion coefficient of the substrate is larger than the linear thermal expansion coefficient of the detecting layer.

    Abstract translation: 红外线检测装置包括基板和热光检测元件。 基板包括凹部和位于凹部的周边上的框架部。 热光检测元件包括腿部和检测部。 腿部连接在框架部分上,使得检测部分位于凹部的上方。 热光检测元件包括设置在基板上的第一电极层,设置在第一电极层上的检测层和设置在检测层上的第二电极层。 第一电极层的线性热膨胀系数大于衬底的线性热膨胀系数。 基板的线性热膨胀系数大于检测层的线性热膨胀系数。

    Method for producing halide
    8.
    发明授权

    公开(公告)号:US12180085B2

    公开(公告)日:2024-12-31

    申请号:US17933097

    申请日:2022-09-17

    Abstract: The production method of the present disclosure includes heat-treating a material mixture containing a compound containing Y, a compound containing Sm, NH4α, Liβ, and Caγ2 in an inert gas atmosphere. The compound containing Y is at least one selected from the group consisting of Y2O3 and Yδ3, and the compound containing Sm is at least one selected from the group consisting of Sm2O3 and Smε3. The material mixture contains at least one selected from the group consisting of Y2O3 and Sm2O3, and α, β, γ, δ, and ε are each independently at least one selected from the group consisting of F, Cl, Br, and I.

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