METHOD OF FORMING A (RUTILE) TITANIUM DIOXIDE-COATED PLATELET-LIKE PIGMENT
    8.
    发明申请
    METHOD OF FORMING A (RUTILE) TITANIUM DIOXIDE-COATED PLATELET-LIKE PIGMENT 有权
    形成(半)二氧化钛包覆薄片状颜料的方法

    公开(公告)号:US20100075031A1

    公开(公告)日:2010-03-25

    申请号:US12527440

    申请日:2008-02-18

    申请人: Patrice Bujard

    发明人: Patrice Bujard

    IPC分类号: B05D7/00

    摘要: The invention relates to a method of forming (rutile) titanium dioxide-coated platelet-like pigments in which hydrous titanium dioxide is deposited on platelet-like particles followed by calcining, comprising (a) effecting the titanium deposit in the presence of an α-hydroxy carboxylic acid, especially glycolic acid, or oxalic acid, and an amino acid, especially glycine, alanine, valine, aspartic acid (α-, β- and γ-form); or an amino acid; to the pigments obtained by the method and the use thereof. The method can work in the absence of exogenous metal and Ti(III). The rutile TiO2-coated substrate of the present invention has at least the same advantages and characteristics of a tin containing product which includes luster, color, color homogeneity and few small particle formation during manufacture.

    摘要翻译: 本发明涉及一种形成(二氧化钛)二氧化钛涂覆的血小板状颜料的方法,其中将水合二氧化钛沉积在片状颗粒上,随后煅烧,其包括:(a)在α- 羟基羧酸,尤其是乙醇酸或草酸,以及氨基酸,特别是甘氨酸,丙氨酸,缬氨酸,天冬氨酸(α-,β-和γ-型)。 或氨基酸; 涉及通过该方法获得的颜料及其用途。 该方法可以在没有外源金属和Ti(III)的情况下工作。 本发明的金红石TiO 2涂覆的基材在制造过程中至少具有含锡产品的优点和特性,其包括光泽,颜色,颜色均匀性和几个小的颗粒形成。

    Optically variable pigments having an asymmetrical layer structure
    9.
    发明授权
    Optically variable pigments having an asymmetrical layer structure 失效
    具有不对称层结构的光学可变颜料

    公开(公告)号:US07374609B2

    公开(公告)日:2008-05-20

    申请号:US10533575

    申请日:2003-11-12

    IPC分类号: C09D11/00

    摘要: The present invention relates to pigments whose particles have a length of from 2 μm to 5 mm, a width of from 2 μm to 2 mm and a thickness of from 50 nm to 1.5 μm and a ratio of length to thickness of at least 2:1, the particles having a core of a metallically reflecting material having two substantially parallel faces, the distance between which is the shortest axis of the core, comprising (a), optionally, on one parallel face of the core, an SiOy layer wherein 0.95

    摘要翻译: 本发明涉及其颗粒的长度为2μm至5mm,宽度为2μm至2mm,厚度为50nm至1.5μm的颜料,长度与厚度之比至少为2: 如图1所示,颗粒具有金属反射材料的芯,其具有两个基本上平行的面,其间距离是芯的最短轴,其包括(a),任选地在芯的一个平行面上, y层,其中0.95

    Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof
    10.
    发明授权
    Methods of producing plane-parallel structures of silicon suboxide, silicon dioxide and/or silicon carbide, plane-parallel structures obtainable by such methods, and the use thereof 失效
    生成低氧化硅,二氧化硅和/或碳化硅的平面平行结构的方法,可通过这些方法获得的平面平行结构及其用途

    公开(公告)号:US07256425B2

    公开(公告)日:2007-08-14

    申请号:US10504412

    申请日:2003-02-11

    IPC分类号: H01L25/15 H01L31/0312

    摘要: A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.

    摘要翻译: 描述了以PVD方法生产的产品,其由厚度在20至2000nm的薄平面平行结构和小于1mm的范围内的小尺寸组成。 通过将低氧化硅冷凝到通过蒸发器的载体上进行生产。 载体在低聚硅氧烷冷凝前用PVD法中的可溶性,无机或有机分离剂进行预涂。 包括通过溶解分离产品的所有步骤可以在不同的地点连续地同时进行。 作为最后的步骤,SiO 2可以在含氧气体中在大气压和大于200℃的温度下氧化成SiO 2, y可以在500℃至1500℃的含碳气体的平面 - 平行结构的表面处转化为SiC。以这种方式制造的产品的厚度均匀性很高。