公开(公告)号：US5536947A

公开(公告)日：1996-07-16

申请号：US506630

申请日：1995-07-25

申请人： Patrick K. Klersy ,  David A. Strand ,  Stanford R. Ovshinsky

发明人： Patrick K. Klersy ,  David A. Strand ,  Stanford R. Ovshinsky

IPC分类号： C23C14/06 ,  G11C11/56 ,  G11C16/02 ,  H01L21/822 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/144 ,  G11C13/04 ,  G11C2213/72

摘要： An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. Each contact includes (1) a thin-film layer, preferably titanium cabonitride or titanium siliconitride, disposed adjacent to the memory material, used as a diffusion barrier to inhibit foreign material from entering the memory material, and (2) a thin-film layer, preferably a Ti--W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.

摘要翻译： 电操作的直接覆盖多单位单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在动态范围内被设置为多个电阻值之一的能力，以便向单个单元提供多位存储能力，以及（3）至少一个 通过所选择的电气单位在动态范围内的任何电阻值，而不管材料的先前电阻值如何，要设置的丝状部分。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 每个触点包括（1）设置在存储材料附近的用作阻挡异物进入存储材料的扩散阻挡层的薄膜层，优选钛碳氮化钛或钛硅化钛，以及（2）薄膜层 优选Ti-W合金，其设置在远离存储材料的位置，用于提供铝电迁移，扩散的屏障，并在铝界面处提供欧姆接触。