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1.发明授权Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom 失效电可擦除，直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5536947A
公开(公告)日：1996-07-16
申请号：US506630
申请日：1995-07-25
IPC分类号： C23C14/06 , G11C11/56 , G11C16/02 , H01L21/822 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： An electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within the dynamic range in response to selected electrical input signals so as to provide the single cell with multibit storage capabilities, and (3) the ability of at least a filamentary portion to be set, by the selected electrical singal to any resistance value in the dynamic range, regardless of the previous resistance value of the material. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. Each contact includes (1) a thin-film layer, preferably titanium cabonitride or titanium siliconitride, disposed adjacent to the memory material, used as a diffusion barrier to inhibit foreign material from entering the memory material, and (2) a thin-film layer, preferably a Ti--W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.
摘要翻译： 电操作的直接覆盖多单位单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在动态范围内被设置为多个电阻值之一的能力，以便向单个单元提供多位存储能力，以及（3）至少一个 通过所选择的电气单位在动态范围内的任何电阻值，而不管材料的先前电阻值如何，要设置的丝状部分。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 每个触点包括（1）设置在存储材料附近的用作阻挡异物进入存储材料的扩散阻挡层的薄膜层，优选钛碳氮化钛或钛硅化钛，以及（2）薄膜层 优选Ti-W合金，其设置在远离存储材料的位置，用于提供铝电迁移，扩散的屏障，并在铝界面处提供欧姆接触。
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2.发明授权Composite memory material comprising a mixture of phase-change memory material and dielectric material 失效复合记忆材料包括相变记忆材料和电介质材料的混合物
公开(公告)号：US5825046A
公开(公告)日：1998-10-20
申请号：US739080
申请日：1996-10-28
申请人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
发明人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , David A. Strand , Patrick Klersy , Sergey Kostylev , Boil Pashmakov
IPC分类号： H01L27/10 , G11C16/02 , H01L27/105 , H01L45/00 , H01L47/00
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1246 , H01L45/14 , H01L45/142 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , G11C2213/35 , G11C2213/51 , G11C2213/72
摘要： A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
摘要翻译： 一种复合记忆材料，包括有源相变记忆材料和非活性介电材料的混合物。 相变材料包括选自Te，Se，Ge，Sb，Bi，Pb，Sn，As，S，Si，P，O及其混合物或合金中的一种或多种元素。 包括上述复合存储器材料的单个单元存储元件和一对间隔设置的触点。
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公开(公告)号：US5166758A
公开(公告)日：1992-11-24
申请号：US642984
申请日：1991-01-18
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675 , G11C13/04
摘要： An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.
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4.发明授权
公开(公告)号：US4106939A
公开(公告)日：1978-08-15
申请号：US838574
申请日：1977-10-03
IPC分类号： C07D307/33 , C07D307/80 , C07D311/16 , C07D333/22 , C07D333/56 , C07D345/00 , G03C1/73 , G03C5/24 , G03C1/00
CPC分类号： C07D307/33 , C07D307/80 , C07D311/16 , C07D333/22 , C07D333/56 , C07D345/00 , G03C1/734 , C07C2103/26 , Y10S428/913 , Y10T428/31504
摘要： Selected areas of a layer comprising an imaging material in the form of a tellurium tetrahalide adduct of an aromatic amine, exemplified by a tellurium tetrachloride adduct of dimethyl aniline, which adduct is free from any diazo groups, in the presence of a spectral photosensitizer, are subjected to the imaging effect of imaging energy, and of development, advantageously of developing energy, causing a change in the tellurium-organic imaging material in the imaged areas accompanied by a change in the detectable characteristic of the imaging material in the imaged areas. The aforesaid imaging material is especially advantageously extended in a matrix of a polymeric or resinous film-forming material. The invention in its generally most advantageous form involves an imaging step employing imaging energy and producing a latent image, followed by a heat development step to produce the detectable recorded information or image.
摘要翻译： 包含芳族胺的四卤化碲形式的成像材料的成像材料的一部分区域，例如在光谱光敏剂存在下，加合物不含任何重氮基团的二甲基苯胺的四氯化碲加合物。 经受有利于显影能量的成像能量和显影的成像效应，引起成像区域中的碲 - 有机成像材料的变化，伴随着成像区域中成像材料的可检测特性的变化。 上述成像材料特别有利地在聚合物或树脂成膜材料的基质中延伸。 本发明通常最有利的形式涉及使用成像能量并产生潜像的成像步骤，随后是热显影步骤以产生可检测的记录信息或图像。
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公开(公告)号：US5128099A
公开(公告)日：1992-07-07
申请号：US657170
申请日：1991-02-15
CPC分类号： G11C13/04 , G11B7/00557 , G11B7/24 , G11B7/243 , G11C13/047 , G11C7/005 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316
摘要： A state changeable memory alloy and device employing same. The memory alloy is capable of changing from a first state to a second state in response to the input of energy, such as projected optical beam energy, electrical energy or thermal energy. The alloy has a first detectable characteristic when in the first state and a second detectable characteristic when in the second state. It is further characterized in that the first state comprises a single phase, and the second state comprises either: (1) a single phase having the same composition as the first phase or (2) a plurality of phases which have substantially similar crystallization temperatures and kinetics.
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6.发明授权Electrically erasable memory elements characterized by reduced current and improved thermal stability 失效电可擦除存储元件的特征在于电流降低和热稳定性得到改善
公开(公告)号：US5534712A
公开(公告)日：1996-07-09
申请号：US517313
申请日：1995-08-21
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1641 , G11C13/04 , G11C2213/72
摘要： Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a volume of memory material which is a transition metal modified chalcogen. The transition metal may be selected from the group consisting of Nb, Pd, Pt and mixtures or alloys thereof. The memory material may further include at least one transition metal selected from the group consisting of Fe, Cr, Ni and mixtures or alloys thereof. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory element of the instant invention is in turn characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energy levels. The memory elements are further characterized by enhanced thermal stability of data retention, which stability is achieved by elementally modifying Te--Ge--Sb semiconductor material from which previous memory elements were fabricated.
摘要翻译： 本文公开了具有降低的开关电流要求和增加的数据保持的热稳定性的固态，直接可重写，非易失性，高密度，低成本，低能量，高速度，容易制造的单电池存储元件。 存储元件包括一定量的存储材料，其是过渡金属改性的硫属元素。 过渡金属可以选自Nb，Pd，Pt及其混合物或合金。 记忆材料还可以包括选自Fe，Cr，Ni中的至少一种过渡金属及其混合物或合金。 存储元件在显着降低的开关能量水平下显示出更高的开关速度的数量级。 特别地，本发明的新型存储元件还特征在于本地原子和/或电子顺序的至少两个稳定和非易失性可检测配置，其可以通过指定的电输入信号来选择性地和可重复地访问这些配置 能量水平 存储元件的特征还在于增强了数据保持的热稳定性，通过元素修饰先前存储元件的Te-Ge-Sb半导体材料来实现稳定性。
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7.发明授权Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5534711A
公开(公告)日：1996-07-09
申请号：US423484
申请日：1995-04-19
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the singIe cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
摘要翻译： 本发明包括电操作的直接覆盖的多位单个单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 所述单元存储元件的至少一个细长部分可通过所选择的电信号被设置成所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。 存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。 控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度 当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。
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8.发明授权Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 失效电可擦除的直接可重写的多单元单元存储元件和由其制造的阵列
公开(公告)号：US5406509A
公开(公告)日：1995-04-11
申请号：US46249
申请日：1993-04-12
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/144 , G11C13/04 , G11C2213/72
摘要： The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized by: (1) a large dynamic range of electrical resistance values; and (2) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit storage capabilities. The memory element also includes a pair of spacedly disposed contacts for supplying the electrical input signal to set the memory material to a selected resistance value within the dynamic range. At least a filamentary portion of the single cell memory element being setable, by the selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material. The memory element further includes a filamentary portion controlling means disposed between the volume of memory material and at least one of the spacedly disposed contacts. The controlling means defining the size and position of the filamentary portion during electrical formation of the memory element and limiting the size and confining the location of the filamentary portion during use of the memory element, thereby providing for a high current density within the filamentary portion of the single cell memory element upon input of a very low total current electrical signal to the spacedly disposed contacts.
摘要翻译： 本发明包括电操作的直接覆盖的多位单个单元存储元件。 存储元件包括限定单个单元存储元件的一定量的存储器材料。 记忆材料的特征在于：（1）电阻值的大动态范围; 以及（2）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位存储能力。 存储元件还包括一对间隔设置的触点，用于提供电输入信号以将存储器材料设置在动态范围内的所选电阻值。 所述单个单元存储元件的至少一个细长部分可被所选择的电信号设定到所述动态范围内的任何电阻值，而与所述材料的先前电阻值无关。 存储元件还包括设置在存储器材料体积与间隔设置的触点中的至少一个之间的丝状部分控制装置。 控制装置在存储元件的电气形成期间限定丝状部分的尺寸和位置，并且在存储元件的使用期间限制尺寸并限制丝状部分的位置，由此提供丝网部分内的高电流密度 当输入非常低的总电流电信号到间隔布置的触点时，单个单元存储元件。
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9.发明授权Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements 失效微晶半导体材料，半导体器件和由其制造的直接可重写存储元件的均匀组成，以及由存储元件制造的阵列
公开(公告)号：US5335219A
公开(公告)日：1994-08-02
申请号：US768139
申请日：1991-09-30
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , David A. Strand , Wolodymyr Czubatyj , Jesus Gonzalez-Hernandez , Hellmut Fritzsche , Qiuyi Ye , Sergey A. Kostylev , Benjamin S. Chao
IPC分类号： H01L27/10 , G11C11/56 , G11C16/02 , H01H45/00 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L27/24 , H01L29/788 , H01L29/792 , H01L45/00 , G11C13/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/115 , G11C13/04
摘要： A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.
摘要翻译： 一种独特的微晶半导体材料，其可以在晶相内被调制以承担不同费米能级位置的大动态范围中的任何一种，同时在整个范围内保持基本恒定的带隙，即使在调制场已经被 删除。 基于由所述独特类型的半导体材料提供的新型开关特性的固态，直接可重写的，电子和光学，非易失性，高密度，低成本，低能量，高速度，容易制造的多单元单元存储器，其中 存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征还在于本地原子序列的许多稳定和非易失性可检测配置，其可通过不同等级的输入信号选择性地和可重复地访问这些配置。
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10.发明授权Electrically erasable memory elements having improved set resistance stability 失效具有改进的电阻稳定性的电可擦除存储元件
公开(公告)号：US5414271A
公开(公告)日：1995-05-09
申请号：US789234
申请日：1991-11-07
申请人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
发明人： Stanford R. Ovshinsky , Stephen J. Hudgens , Wolodymyr Czubatyj , David A. Strand , Guy C. Wicker
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L45/1625 , G11C13/04 , G11C2213/72
摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level. The memory elements are further characterized by enhanced stability, which stability is achieved through the use of compositional modulation of the semiconductor material from which the memory elements are fabricated.
摘要翻译： 基于由所述独特类型的半导体材料提供的新颖的开关特性，固态，直接可重写的，电子的，非易失性的，高密度的，低成本的，低能量的，高速的，容易制造的多单元单元存储器或控制阵列 通过可逆的费米能级位置的大动态范围。 制造阵列的存储器或控制元件在显着降低的能量水平下显示出更高的开关速度的数量级。 本发明的新颖的记忆元件又特别包括局部原子和/或电极顺序的许多稳定和非易失性的可检测配置，这些配置可以通过偏转能级的电输入信号来选择性地和重复地访问 。 存储元件的特征还在于增强的稳定性，其通过使用制造存储元件的半导体材料的组成调制来实现稳定性。
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