公开(公告)号：US20130149824A1

公开(公告)日：2013-06-13

申请号：US13537956

申请日：2012-06-29

申请人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

发明人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/7391 ,  H01L29/0657 ,  H01L29/0895 ,  H01L29/517 ,  H01L29/66356

摘要： The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.

摘要翻译： 本发明属于半导体器件制造的技术领域，具体涉及一种具有U形沟道的隧道效应晶体管的制造方法。 U型通道可以有效地延长晶体管沟道长度，抑制晶体管中漏电流的产生，降低芯片功耗。 本发明提出的具有U形通道的隧道场效应晶体管的制造方法能够实现非常窄的U形沟道，克服由光刻引入的取向偏差，提高芯片集成度。

公开(公告)号：US08586432B2

公开(公告)日：2013-11-19

申请号：US13537854

申请日：2012-06-29

申请人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

发明人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/7391 ,  H01L29/0692 ,  H01L29/165 ,  H01L29/66356

摘要： The present invention belongs to the technical field of semiconductors and specifically relates to a method for manufacturing a vertical-channel tunneling transistor. In the present invention, the surrounding gate gate structure improves the control capacity of the gate and the source of narrow band gap material can enhance the device driving current. The method for manufacturing a vertical-channel tunneling transistor put forward by the present invention capable of controlling the channel length precisely features simple process, easy control and reduction of production cost.

摘要翻译： 本发明属于半导体技术领域，具体涉及制造垂直沟道隧道晶体管的方法。 在本发明中，围绕栅极栅极结构提高了栅极的控制能力，并且窄带隙材料的源极可以增强器件驱动电流。 本发明提出的能够精确控制通道长度的垂直通道隧道晶体管的制造方法具有工艺简单，易于控制和降低生产成本。

公开(公告)号：US08748267B2

公开(公告)日：2014-06-10

申请号：US13537956

申请日：2012-06-29

申请人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

发明人： Pengfei Wang ,  Xi Lin ,  Wei Liu ,  Qingqing Sun ,  Wei Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/7391 ,  H01L29/0657 ,  H01L29/0895 ,  H01L29/517 ,  H01L29/66356

摘要： The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.

摘要翻译： 本发明属于半导体器件制造的技术领域，具体涉及一种具有U形沟道的隧道效应晶体管的制造方法。 U型通道可以有效地延长晶体管沟道长度，抑制晶体管中漏电流的产生，降低芯片功耗。 本发明提出的具有U形通道的隧道场效应晶体管的制造方法能够实现非常窄的U形沟道，克服由光刻引入的取向偏差，提高芯片集成度。

公开(公告)号：US11866156B1

公开(公告)日：2024-01-09

申请号：US17531766

申请日：2021-11-21

申请人： Wei Liu

发明人： Wei Liu

IPC分类号： B64C23/06 ,  B64C21/10

CPC分类号： B64C23/065 ,  B64C21/10

摘要： This invention is an apparatus for vortex generation by combining the function of means for vortex generation with the functions of the leading-edge aerodynamic surface, the airfoil, and/or the trailing-edge aerodynamic surface.

公开(公告)号：US11686448B1

公开(公告)日：2023-06-27

申请号：US17699103

申请日：2022-03-19

申请人： Wei Liu

发明人： Wei Liu

IPC分类号： B60Q1/00 ,  F21S41/683 ,  F21S41/32 ,  F21S41/43 ,  F21S41/25 ,  F21W102/135

CPC分类号： F21S41/683 ,  F21S41/25 ,  F21S41/32 ,  F21S41/43 ,  F21W2102/135

摘要： This invention is a projector headlight that, while offering dual beam patterns, boasts a 100% utilization of the light emitted from a light source by one of the following methods: (1) employing a reflective cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern, (2) using reversible cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern with no moving part involved, (3) utilizing a selective light-filter cutoff means to selectively reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern without making use of any moving part, (4) using a low-beam light-emitting subassembly and a high-beam light-emitting subassembly that are separated by partition means to achieve dual beam patterns with no moving part, or (5) adopting a low-beam light-emitting subassembly in low-beam pattern and a high-beam light-emitting subassembly in high-beam pattern without any moving part.

公开(公告)号：USD952959S1

公开(公告)日：2022-05-24

申请号：US29778103

申请日：2021-04-10

申请人： Wei Liu

设计人： Wei Liu

公开(公告)号：US09588205B2

公开(公告)日：2017-03-07

申请号：US13582800

申请日：2011-03-10

申请人： Stefanie Remmele ,  Wei Liu ,  Tobias Ratko Voigt ,  Christian Stehning

发明人： Stefanie Remmele ,  Wei Liu ,  Tobias Ratko Voigt ,  Christian Stehning

IPC分类号： G01R33/50 ,  G01R33/56 ,  G01R33/561

CPC分类号： G01R33/50 ,  G01R33/5601 ,  G01R33/5613 ,  G01R33/5616

摘要： The invention relates to a magnetic resonance imaging method for simultaneous and dynamic determination of a longitudinal relaxation time T1 and a transversal relaxation time T2 of the nuclear spin system of an object, in the context of DCE or DSE MRI. In this respect, the invention makes use of a steady-state gradient echo pulse sequence comprising an EPI readout module.

摘要翻译： 本发明涉及一种用于在DCE或DSE MRI的背景下同时和动态地确定物体的核自旋系统的纵向弛豫时间T1和横向弛豫时间T2的磁共振成像方法。 在这方面，本发明利用包括EPI读出模块的稳态梯度回波脉冲序列。

公开(公告)号：US09349561B2

公开(公告)日：2016-05-24

申请号：US13340701

申请日：2011-12-30

申请人： Jinshu Wang ,  Wei Liu ,  Fan Yang ,  Xiang Liu ,  Hongyi Li ,  Meiling Zhou ,  Tieyong Zuo

发明人： Jinshu Wang ,  Wei Liu ,  Fan Yang ,  Xiang Liu ,  Hongyi Li ,  Meiling Zhou ,  Tieyong Zuo

IPC分类号： H01J1/14 ,  H01J1/142 ,  H01J1/13 ,  H01J1/144 ,  H01J9/04 ,  H01J23/05

CPC分类号： H01J1/142 ,  H01J1/13 ,  H01J1/14 ,  H01J1/144 ,  H01J9/047 ,  H01J23/05

摘要： Impregnated rare earth metal-containing barium-aluminum-scandate cathodes with a rare earth oxide doped tungsten matrix and methods for the fabrication thereof are described. In one aspect, an impregnated rare earth metal-containing barium-aluminum-scandate cathode comprises: a rare earth oxide doped tungsten matrix, and an impregnated active substance. The active substance comprises scandium oxide (Sc2O3), a second rare earth oxide, and barium calcium aluminate, wherein the molar ratio of Ba:Ca:Al is about 4:1:1.

摘要翻译： 描述了具有稀土氧化物掺杂钨基体的含浸稀土金属的钡 - 铝 - 钪酸盐阴极及其制造方法。 一方面，含浸稀土金属的钡 - 铝 - 钪酸盐阴极包括：掺杂稀土氧化物的钨基体和浸渍的活性物质。 活性物质包含氧化钪（Sc 2 O 3），第二稀土氧化物和铝酸钡钙，其中Ba:Ca:Al的摩尔比为约4:1:1。

公开(公告)号：US09248430B2

公开(公告)日：2016-02-02

申请号：US13510216

申请日：2010-07-22

申请人： Fuling Huang ,  Puke Mi ,  Sihan Wang ,  Jinhua Qian ,  Qian Chen ,  Sheng Xu ,  Jianzhong Li ,  Gang Wang ,  Baojun Zhang ,  Min Liu ,  Guizhi Wang ,  Xuemei Han ,  Jiabo Qu ,  Panfeng Lu ,  Shukun Sun ,  Xiuhui Wang ,  Yuxin Gao ,  Deshun Zhang ,  Ling Jiang ,  Buwei Yu ,  Libo Wang ,  Yali Wang ,  Lingting Fan ,  Peng Wei ,  Wei Liu ,  Guiyue Guo

发明人： Fuling Huang ,  Puke Mi ,  Sihan Wang ,  Jinhua Qian ,  Qian Chen ,  Sheng Xu ,  Jianzhong Li ,  Gang Wang ,  Baojun Zhang ,  Min Liu ,  Guizhi Wang ,  Xuemei Han ,  Jiabo Qu ,  Panfeng Lu ,  Shukun Sun ,  Xiuhui Wang ,  Yuxin Gao ,  Deshun Zhang ,  Ling Jiang ,  Buwei Yu ,  Libo Wang ,  Yali Wang ,  Lingting Fan ,  Peng Wei ,  Wei Liu ,  Guiyue Guo

IPC分类号： C07C6/10 ,  B01J21/04 ,  B01J37/02 ,  C07C2/22

CPC分类号： B01J21/04 ,  B01J37/0205 ,  B01J37/0207 ,  C07C2/22 ,  C07C2521/04 ,  C07C2527/126 ,  C07C11/02

摘要： A method for synthesis of 1-decene oligomer is provided, wherein 1-decene is polymerized at 80-120° C., 0.8-1.4 MPa in the presence of aluminum trichloride catalyst supported on gamma-alumina and n-hexane solvent where the volume ratio of 1-decene to n-hexane is 3:8-4:1. The catalyst is treated as follows: impregnating gamma-alumina carrier in 0.5-2.0 M of hydrochloric acid, sulfuric acid, nitric acid or mixtures thereof, then vacuum drying at 80-100° C. and calcining at 400-800° C.; dissolving 5-10 g of anhydrous aluminum trichloride in 100 ml of tetrachloromethane, trichloromethane or dichloromethane solvent; adding the obtained solution into 10-20 g of activated alumina carrier and obtaining the catalyst after vacuum drying. The conversion of 1-decene is 50 wt % or more. The oligomer has a kinematic viscosity at 40° C. of 6.0-25 mm2/s and a viscosity index of 160-262.

摘要翻译： 提供1-癸烯低聚物的合成方法，其中1-癸烯在负载在γ-氧化铝和正己烷溶剂上的三氯化铝催化剂存在下，在80-120℃，0.8-1.4MPa下聚合，其中体积 1-癸烯与正己烷的比例为3：8-4：1。 催化剂的处理如下：将γ-氧化铝载体浸入0.5-2.0M盐酸，硫酸，硝酸或其混合物中，然后在80-100℃真空干燥并在400-800℃下煅烧。 将5-10g无水三氯化铝溶于100ml四氯甲烷，三氯甲烷或二氯甲烷溶剂中; 将得到的溶液加入10-20g活性氧化铝载体中，真空干燥后得到催化剂。 1-癸烯的转化率为50重量％以上。 低聚物在40℃下的运动粘度为6.0-25mm 2 / s，粘度指数为160-262。

公开(公告)号：US09152932B2

公开(公告)日：2015-10-06

申请号：US12970994

申请日：2010-12-17

申请人： Mohammad Reza Shafiee ,  Hongfang Li ,  Wei Liu ,  Anurag Gupta ,  Ashutosh K. Sureka ,  Satya S. Raju

发明人： Mohammad Reza Shafiee ,  Hongfang Li ,  Wei Liu ,  Anurag Gupta ,  Ashutosh K. Sureka ,  Satya S. Raju

IPC分类号： G06F17/30 ,  G06Q10/06

CPC分类号： G06Q10/06

摘要： A system may create work units, each work unit including at least one of an input port or output port, each work unit configured to modify data that is received via the input port. In addition, the system may compose a workflow by connecting an output port of a first of the work units to an input port of a second of the work units, receive a work order, select the workflow in response to the work order, decompose the workflow into constituent work units, instantiate tasks that correspond to the constituent work units, and execute a work unit process for each of the tasks.

摘要翻译： 系统可以创建工作单元，每个工作单元包括输入端口或输出端口中的至少一个，每个工作单元被配置为修改经由输入端口接收的数据。 此外，系统可以通过将第一工作单元的输出端口连接到第二工作单元的输入端口来组合工作流程，接收工作单，响应于工作顺序选择工作流程，分解工作单元 工作流组成工作单元，实例化与组成单位对应的任务，并执行每个任务的工作单元处理。