Semiconductor deivce configured for reducing post-fabrication damage
    3.
    发明申请
    Semiconductor deivce configured for reducing post-fabrication damage 有权
    半导体器件配置为减少制造后损坏

    公开(公告)号:US20050173024A1

    公开(公告)日:2005-08-11

    申请号:US10773614

    申请日:2004-02-06

    摘要: A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.

    摘要翻译: 半导体器件包括被配置为减少对器件的制造后损坏的IC管芯。 IC模具形成为使得模具的一个或多个周边边缘的至少一部分通过蚀刻工艺被倒角。 所述半导体器件可以包括多个IC管芯,所述IC管芯中的至少一个通过在所述器件的上表面中形成一个或多个V形槽而与所述半导体器件分离,所述V形槽限定 所述至少一个IC芯片。 去除半导体器件的背面,直到露出V形槽的至少一部分。 当以这种方式将IC芯片与半导体器件分离时,每个V形槽的侧壁形成分离的IC管芯的斜边周边。

    Semiconductor device with improved thermal characteristics
    4.
    发明申请
    Semiconductor device with improved thermal characteristics 审中-公开
    具有改善热特性的半导体器件

    公开(公告)号:US20050184385A1

    公开(公告)日:2005-08-25

    申请号:US10784756

    申请日:2004-02-23

    摘要: A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element formed therein. At least one channel is formed in a back surface of the substrate opposite the upper surface of the substrate, the channel being formed proximate the active region. The channel is substantially filled with one or more layers of a thermally conductive material and configured so as to provide a thermal conduction path for conducting heat away from the active region.

    摘要翻译: 半导体器件包括衬底和形成在衬底中的靠近衬底的上表面的有源区。 有源区包括形成在其中的至少一个电路元件。 在衬底的与衬底的上表面相对的背表面中形成至少一个沟道,该沟道靠近有源区形成。 通道基本上填充有一层或多层导热材料,并且构造成提供用于将热量从有源区域传导出来的热传导路径。

    Media player with extracted volume position memory
    5.
    发明申请
    Media player with extracted volume position memory 有权
    媒体播放器提取音量位置记忆

    公开(公告)号:US20050024994A1

    公开(公告)日:2005-02-03

    申请号:US10632316

    申请日:2003-08-01

    申请人: Sujal Shah Nabil Issa

    发明人: Sujal Shah Nabil Issa

    摘要: A method and arrangement remembers a last-played position of a recorded medium by associating an identification number with the medium and storing therewith in memory a last-play position of the medium. The identification number of the recorded medium is analyzed after re-insertion of the medium into the player and play is resumed at the last-play position when the identification number corresponds with the identification number previously stored in memory.

    摘要翻译: 一种方法和装置通过将识别号与介质相关联并存储在存储器中来记住记录介质的最后播放位置,该介质的最后播放位置。 在将媒体重新插入播放器之后分析记录介质的识别号码,当识别号码对应于先前存储在存储器中的识别号码时,在最后播放位置重新播放。