摘要:
A strain gauge comprised of a premagnetized ferromagnetic film wherein any change in length of the film is converted into a planar Hall voltage by employing the property of magnetostriction and the planar Hall effect. Alternately, a change in the length of the film can also be measured as a change in electric conductivity by employing the properties of magnetostriction and magnetoresistance. The strain gauge is deposited on a substrate by thin-film techniques and has a very high sensitivity.
摘要:
A strain gauge comprised of a premagnetized ferromagnetic film wherein any change in length of the film can be measured by employing the properties of magnetostriction and magnetoresistance. The strain gauge is deposited on a substrate by thin-film techniques and has a very high sensitivity. Preferably, two electrically insulated strips parallel strips of amorphous metal film have (in the absence of strain) respective directions of magnetization aligned antiparallel to one another and are connected electrically at one end. Such an arrangement facilitates the reversion of the magnetization back to its easy direction when the stress causing the strain is removed.
摘要:
A magnetic field sensor is disclosed with which the direction of a magnetic field can be determined by using the planar Hall effect. An active layer of the sensor is made of a ferromagnetic amorphous metal which is magnetically isotropic. Thus, the magnetization in the active layer always has the direction of an external magnetic field. The developed planar Hall voltage is a measure of the direction of the magnetic field.
摘要:
An electro-optical recording device for use in dot matrix color recording which uses three identically configured arrays of light gates is described. The three identically configured light gate arrays are arranged relative to one another at such an angle that their optical axes intersect in the recording plane.
摘要:
A frequency switch (1), in particular for use in a multiband/multistandard power amplifier module (11, 17), comprising at least two output ports, a first output port (7) being arranged within a first output path (8) and a second output port (9) being arranged within a second output path (10), said output ports (7, 9) being connected with an input port (6) via said output paths (8, 10), each output path (8, 10) being provided with at least one RF block (2a, 2b, 2c, 2d), each RF-block (2a, 2b, 2c, 2d) comprising a capacitor, (3a, 3b, 3c, 3d) a switching element (5a, 5b, 5c, 5d) and a quarterwave section, wherein for each RF-block (2a, 2b, 2c, 2d) a predetermined frequency band is selected and the length of said quarterwave section is matched to said selected frequency band in order to block incoming signals in said selected frequency band if the switching element (5a, 5b, 5c, 5d) of the corresponding RF-block (2a, 2b, 2c, 2d) is switched on. Thus a frequency switch for usage with a multiband power amplifier can be realised which allows selection of different frequency bands with reduced power loss.
摘要:
A power amplifier bias protection for a depletion mode transistor is achieved according to the invention with a threshold voltage adaptation connected to the Gate of the depletion mode transistor. That threshold voltage adaptation controls a supply voltage switch for the Drain of the depletion mode transistor such that when the threshold voltage adaptation measures a voltage applied to that Gate outside a tolerable predefined range, then it activates the supply voltage switch to disconnect the Drain DC feed line. The input of the supply voltage switch is connected to the Drain voltage source of the depletion mode transistor and the output of the supply voltage switch is connected to the Drain DC feed line.
摘要:
A frequency switch (1), in particular for use in a multiband/multistandard power amplifier module (11, 17), comprising at least two output ports, a first output port (7) being arranged within a first output path (8) and a second output port (9) being arranged within a second output path (10), said output ports (7, 9) being connected with an input port (6) via said output paths (8, 10), each output path (8, 10) being provided with at least one RF block (2a, 2b, 2c, 2d), each RF-block (2a, 2b, 2c, 2d) comprising a capacitor, (3a, 3b, 3c, 3d) a switching element (5a, 5b, 5c, 5d) and a quaterwave section, wherein for each RF-block (2a, 2b, 2c, 2d) a predetermined frequency band is selected and the length of said quaterwave section is matched to said selected frequency band in order to block incoming signals in said selected frequency band if the switching element (5a, 5b, 5c, 5d) of the corresponding RF-block (2a, 2b, 2c, 2d) is switched on. Thus a frequency switch for usage with a multiband power amplifier can be realised which allows selection of different frequency bands with reduced power loss.