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    METHODS OF PRODUCING READ SENSORS WITH IMPROVED ORIENTATION OF THE HARD BIAS LAYER AND SYSTEMS THEREOF
    3.
    发明申请
    METHODS OF PRODUCING READ SENSORS WITH IMPROVED ORIENTATION OF THE HARD BIAS LAYER AND SYSTEMS THEREOF 有权
    生产读取传感器的方法，具有改进的硬度偏移方向及其系统

    公开(公告)号：US20100002336A1

    公开(公告)日：2010-01-07

    申请号：US12166126

    申请日：2008-07-01

    申请人： Yongjian Sun ,  Brian R. York

    发明人： Yongjian Sun ,  Brian R. York

    IPC分类号： G11B5/33 ,  B05D5/12

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08 ,  H01L43/12

    摘要： A system in one embodiment includes a magnetic sensor having a free magnetic layer, a nanocrystalline seed layer formed on an insulative amorphous material; a chromium-containing underlayer formed on the seed layer; and a hard bias layer formed on the underlayer and separated from the sensor by the insulative amorphous material. A method according to a further embodiment includes forming an amorphous insulative layer encapsulating a sensor stack; forming a nanocrystalline seed layer on the amorphous insulative material; forming a chromium-containing underlayer on the seed layer; and forming a hard bias layer on the underlayer. Additional systems and methods are presented.

    摘要翻译： 一个实施例中的系统包括具有自由磁性层的磁性传感器，在绝缘非晶材料上形成的纳米晶种子层; 形成在种子层上的含铬底层; 以及形成在底层上并由绝缘非晶材料与传感器分离的硬偏压层。 根据另一实施例的方法包括形成封装传感器堆叠的非晶绝缘层; 在非晶绝缘材料上形成纳米晶种子层; 在种子层上形成含铬底层; 并在底层上形成硬偏压层。 介绍了其他系统和方法。

    Read sensors with improved orientation of the hard bias layer and having a nanocrystalline seed layer
    4.
    发明授权
    Read sensors with improved orientation of the hard bias layer and having a nanocrystalline seed layer 有权
    读取具有改进的硬偏置层的取向并具有纳米晶种子层的传感器

    公开(公告)号：US08213131B2

    公开(公告)日：2012-07-03

    申请号：US12166126

    申请日：2008-07-01

    申请人： Yongjian Sun ,  Brian R. York

    发明人： Yongjian Sun ,  Brian R. York

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  H01L43/08 ,  H01L43/12

    摘要： A system in one embodiment includes a magnetic sensor having a free magnetic layer, a nanocrystalline seed layer formed on an insulative amorphous material; a chromium-containing underlayer formed on the seed layer; and a hard bias layer formed on the underlayer and separated from the sensor by the insulative amorphous material. A method according to a further embodiment includes forming an amorphous insulative layer encapsulating a sensor stack; forming a nanocrystalline seed layer on the amorphous insulative material; forming a chromium-containing underlayer on the seed layer; and forming a hard bias layer on the underlayer. Additional systems and methods are presented.

    摘要翻译： 一个实施例中的系统包括具有自由磁性层的磁性传感器，在绝缘非晶材料上形成的纳米晶种子层; 形成在种子层上的含铬底层; 以及形成在底层上并由绝缘非晶材料与传感器分离的硬偏压层。 根据另一实施例的方法包括形成封装传感器堆叠的非晶绝缘层; 在非晶绝缘材料上形成纳米晶种子层; 在种子层上形成含铬底层; 并在底层上形成硬偏压层。 介绍了其他系统和方法。

    Intermediate tri-layer structure for perpendicular recording media
    5.
    发明授权
    Intermediate tri-layer structure for perpendicular recording media 有权
    用于垂直记录介质的中间三层结构

    公开(公告)号：US07833640B2

    公开(公告)日：2010-11-16

    申请号：US11208207

    申请日：2005-08-19

    申请人： Ernesto E. Marinero ,  Natacha Frederique Supper ,  Brian R. York

    发明人： Ernesto E. Marinero ,  Natacha Frederique Supper ,  Brian R. York

    IPC分类号： G11B5/667

    CPC分类号： G11B5/7325 ,  G11B5/65

    摘要： An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a tri-layer IML resident between a soft under layer CoTaZr film and a CoPtCr—SiO2 magnetic media. In an embodiment, the tri-layer comprises a RuxCr1−x layer over dual nucleation layers of Ni—Fe and Ni—Fe—Cr. The tri-layer replaces the typical Ru and Ni—Fe intermediate layers of the prior art, resulting in considerable improvement in lattice matching between the Ru containing intermediate layer and the CoPtCr—SiO2 magnetic media, further resulting in improved magnetic media performance.

    摘要翻译： 公开了用于构建垂直记录介质的改进的结构。 该结构包括驻留在软底层CoTaZr膜和CoPtCr-SiO 2磁性介质之间的三层IML。 在一个实施方案中，三层包括在Ni-Fe和Ni-Fe-Cr的双成核层上的RuxCr1-x层。 三层代替现有技术的典型的Ru和Ni-Fe中间层，导致含Ru中间层和CoPtCr-SiO 2磁介质之间的晶格匹配相当大的改进，进一步导致改善的磁介质性能。

    Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer
    6.
    发明授权
    Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer 有权
    具有反铁磁交换耦合结构的磁阻传感器具有用于增强反铁磁层中的化学排序的底层

    公开(公告)号：US07339769B2

    公开(公告)日：2008-03-04

    申请号：US10791927

    申请日：2004-03-02

    申请人： Matthew J. Carey ,  Bruce A. Gurney ,  Brian R. York ,  Thomas Block

    发明人： Matthew J. Carey ,  Bruce A. Gurney ,  Brian R. York ,  Thomas Block

    IPC分类号： G11B5/33 ,  G11B5/66

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098

    摘要： An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic layer in contact with the underlayer, and a ferromagnetic layer exchange-coupled with the antiferromagnetic layer. The underlayer is an alloy selected from the group consisting of alloys of AuCu, FePt, FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The underlayer enhances the transformation of the Mn alloy from the chemically-disordered phase to the chemically-ordered phase. In one example, an exchange-coupled structure with an underlayer/antiferromagnetic layer of AuCu/PtMn allows the PtMn to be made substantially thinner, thus reducing the electrical resistance of the structure and improving the performance of a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor.

    摘要翻译： 用于诸如磁阻传感器的磁性装置中使用的反铁磁交换耦合结构包括由化学有序的四方晶合金形成的底层，与底层接触的化学有序的四方晶结构的Mn合金反铁磁层 和与反铁磁层交换耦合的铁磁层。 底层是选自AuCu，FePt，FePd，AgTi3，PtZn，PdZn，IrV，CoPt和PdCd的合金的合金，反铁磁层是Mn与Pt，Ni，Ir，Pd或 Rh。 底层增强了Mn合金从化学无序相向化学有序相的转变。 在一个实例中，具有AuCu / PtMn的底层/反铁磁性层的交换耦合结构允许使PtMn基本上更薄，从而降低结构的电阻并提高电流垂直于 - 平面（CPP）磁阻传感器。

    Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
    7.
    发明授权
    Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
    具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器

    公开(公告)号：US07190557B2

    公开(公告)日：2007-03-13

    申请号：US10824701

    申请日：2004-04-14

    申请人： Jinshan Li ,  Brian R. York ,  Alexander M. Zeltser

    发明人： Jinshan Li ,  Brian R. York ,  Alexander M. Zeltser

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.

    摘要翻译： 底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。 第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。 第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

    Magnetic thin film disks with a nonuniform composition
    8.
    发明授权
    Magnetic thin film disks with a nonuniform composition 失效
    具有不均匀组成的磁性薄膜磁盘

    公开(公告)号：US06709774B2

    公开(公告)日：2004-03-23

    申请号：US09955911

    申请日：2001-09-18

    申请人： Ernesto E. Marinero ,  Timothy Martin Reith ,  Hal Jerves Rosen ,  Brian R. York

    发明人： Ernesto E. Marinero ,  Timothy Martin Reith ,  Hal Jerves Rosen ,  Brian R. York

    IPC分类号： G11B566

    CPC分类号： C23C14/345 ,  C23C14/34 ,  C23C14/50 ,  G11B5/656 ,  G11B5/851 ,  H01F41/18 ,  H01F41/183 ,  H01J37/3473 ,  Y10S428/90

    摘要： A method of influencing variations in composition of thin films is described. The elemental plasma field distribution in sputtering systems is manipulated by generating a nonuniform electric field along a surface of the substrate to alter the composition by differentially re-sputtering the target elements. The nonuniform electric field is applied by one or more electrodes in contact with a conductive surface or by using an RF bias signal. The nonuniform electric field is used to modulate the kinetic energy of the ions generated in the plasma which strike the thin film's surface. Since the kinetic energy and the mass of the sputtering gas ions and neutrals affect the re-sputtering rate, the nonuniform electric field differentially affects the elements being deposited according to mass. By applying varying electric potentials at a plurality of points on a conductive surface of a substrate, the electric field across the surface of the substrate can be modulated in a variety of patterns. For example, the field can be varied along the circumferential and/or radial direction of a disk. In the preferred embodiment a radial voltage gradient is applied to a conductive surface of a disk on which a magnetic thin film is being formed to radially modulate the platinum content of the magnetic film. Modulating the radial platinum content in turn modulates the radial coercivity.

    摘要翻译： 描述了影响薄膜组成变化的方法。 溅射系统中的元素等离子体场分布通过沿着衬底的表面产生不均匀的电场来操纵，以通过差别地再次溅射靶元素来改变组成。 不均匀电场通过与导电表面接触的一个或多个电极或通过使用RF偏置信号施加。 不均匀电场用于调制在等离子体中产生的离子的动能，其冲击薄膜的表面。 由于溅射气体离子和中性粒子的动能和质量影响再溅射速率，所以不均匀的电场会根据质量差异地影响沉积的元素。 通过在衬底的导电表面上的多个点处施加变化的电势，可以以各种图案调制穿过衬底表面的电场。 例如，该磁场可以沿盘的周向和/或径向改变。 在优选实施例中，径向电压梯度被施加到其上形成有磁性薄膜的盘的导电表面以径向调制磁性膜的铂含量。 调制径向铂含量又调制径向矫顽力。

    SUBSTRATE NITROGEN PLASMA TREATMENT FOR SOFTER CoFe MAIN POLE WRITER FORMATION
    9.
    发明申请
    SUBSTRATE NITROGEN PLASMA TREATMENT FOR SOFTER CoFe MAIN POLE WRITER FORMATION 有权
    基质硝基等离子体处理

    公开(公告)号：US20130229728A1

    公开(公告)日：2013-09-05

    申请号：US13411424

    申请日：2012-03-02

    申请人： Elizabeth A. Brinkman ,  Ning Shi ,  Brian R. York

    发明人： Elizabeth A. Brinkman ,  Ning Shi ,  Brian R. York

    IPC分类号： G11B5/33 ,  B05D3/10 ,  B05D5/00 ,  G11B21/02

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3133 ,  Y10T428/115

    摘要： A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.

    摘要翻译： 根据一个实施例的磁头包括沟槽中的非磁性间隙层; 在非磁性间隙层上方的极点种子层; 以及在极种子层上方的磁性材料的极层，其中非磁性间隙层，极点种子层和极层中的至少一个在其中具有氮。 根据另一实施例的磁头在沟槽中包括非磁性间隙层; 极性种子层主要由选自NiCr，Ta / Ru，Ta / Rh，NiCr / Ru，NiCr / Rh，NiCr，CoO x，Ru， Rh，Cu，Au / MgO，Ta / Cu; 以及在极晶种层上方主要由CoFe组成的极层，其中非磁性间隙层，极点种子层和极层中的至少一个在其中具有氮。

    Magnetic read head having increased electron exchange
    10.
    发明授权
    Magnetic read head having increased electron exchange 失效
    磁读头具有增加的电子交换

    公开(公告)号：US07675717B2

    公开(公告)日：2010-03-09

    申请号：US11638271

    申请日：2006-12-12

    申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

    发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163

    摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1−x)(x=0.22-0.5) alloys, Ru(x)Cr(1−x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

    摘要翻译： 公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。 读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上层晶种层 其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。 在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。 还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。