摘要:
A system in one embodiment includes a magnetic sensor having a free magnetic layer, a nanocrystalline seed layer formed on an insulative amorphous material; a chromium-containing underlayer formed on the seed layer; and a hard bias layer formed on the underlayer and separated from the sensor by the insulative amorphous material. A method according to a further embodiment includes forming an amorphous insulative layer encapsulating a sensor stack; forming a nanocrystalline seed layer on the amorphous insulative material; forming a chromium-containing underlayer on the seed layer; and forming a hard bias layer on the underlayer. Additional systems and methods are presented.
摘要:
A hard disk drive slider comprises a tunneling magnetoresistance transducer, which comprises an insulator barrier. A nitrogen atom from a nitrogen atmosphere occupies an oxygen atom vacancy within the insulator barrier, such that noise in read data from the tunneling magnetoresistance transducer is reduced.
摘要:
A hard disk drive slider comprises an overcoat layer, which covers an air-bearing surface of the slider. The overcoat covers an exposed surface of a tunneling magnetoresistance transducer. An adhesion layer is coupled with the overcoat layer and the air-bearing surface. The adhesion layer comprises a compound of nitrogen. The compound of nitrogen reduces noise in read data from the tunneling magnetoresistance transducer.
摘要:
A system in one embodiment includes a magnetic sensor having a free magnetic layer, a nanocrystalline seed layer formed on an insulative amorphous material; a chromium-containing underlayer formed on the seed layer; and a hard bias layer formed on the underlayer and separated from the sensor by the insulative amorphous material. A method according to a further embodiment includes forming an amorphous insulative layer encapsulating a sensor stack; forming a nanocrystalline seed layer on the amorphous insulative material; forming a chromium-containing underlayer on the seed layer; and forming a hard bias layer on the underlayer. Additional systems and methods are presented.
摘要:
An improved structure for the construction of perpendicular recording media is disclosed. The structure includes a tri-layer IML resident between a soft under layer CoTaZr film and a CoPtCr—SiO2 magnetic media. In an embodiment, the tri-layer comprises a RuxCr1−x layer over dual nucleation layers of Ni—Fe and Ni—Fe—Cr. The tri-layer replaces the typical Ru and Ni—Fe intermediate layers of the prior art, resulting in considerable improvement in lattice matching between the Ru containing intermediate layer and the CoPtCr—SiO2 magnetic media, further resulting in improved magnetic media performance.
摘要:
An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromagnetic layer in contact with the underlayer, and a ferromagnetic layer exchange-coupled with the antiferromagnetic layer. The underlayer is an alloy selected from the group consisting of alloys of AuCu, FePt, FePd, AgTi3, Pt Zn, PdZn, IrV, CoPt and PdCd, and the antiferromagnetic layer is an alloy of Mn with Pt, Ni, Ir, Pd or Rh. The underlayer enhances the transformation of the Mn alloy from the chemically-disordered phase to the chemically-ordered phase. In one example, an exchange-coupled structure with an underlayer/antiferromagnetic layer of AuCu/PtMn allows the PtMn to be made substantially thinner, thus reducing the electrical resistance of the structure and improving the performance of a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor.
摘要:
A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要:
A method of influencing variations in composition of thin films is described. The elemental plasma field distribution in sputtering systems is manipulated by generating a nonuniform electric field along a surface of the substrate to alter the composition by differentially re-sputtering the target elements. The nonuniform electric field is applied by one or more electrodes in contact with a conductive surface or by using an RF bias signal. The nonuniform electric field is used to modulate the kinetic energy of the ions generated in the plasma which strike the thin film's surface. Since the kinetic energy and the mass of the sputtering gas ions and neutrals affect the re-sputtering rate, the nonuniform electric field differentially affects the elements being deposited according to mass. By applying varying electric potentials at a plurality of points on a conductive surface of a substrate, the electric field across the surface of the substrate can be modulated in a variety of patterns. For example, the field can be varied along the circumferential and/or radial direction of a disk. In the preferred embodiment a radial voltage gradient is applied to a conductive surface of a disk on which a magnetic thin film is being formed to radially modulate the platinum content of the magnetic film. Modulating the radial platinum content in turn modulates the radial coercivity.
摘要:
A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.
摘要:
A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1−x)(x=0.22-0.5) alloys, Ru(x)Cr(1−x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.